公开(公告)号：US10763268B2

公开(公告)日：2020-09-01

申请号：US16437914

申请日：2019-06-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changseop Yoon

IPC: H01L27/11

Abstract: A semiconductor device includes a substrate including first and second active patterns thereon, a first gate electrode intersecting the first and second active patterns, first and second source/drain regions on the first and second active patterns, respectively, at one side of the first gate electrode, and an active contact on the first source/drain region so as to be electrically connected to the first source/drain region. The active contact includes a first sub-contact and a second sub-contact. The second sub-contact includes a vertical extension vertically extending toward the substrate. A bottom surface of the vertical extension is lower than a bottom surface of the first sub-contact.

公开(公告)号：US09978684B2

公开(公告)日：2018-05-22

申请号：US15082820

申请日：2016-03-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changseop Yoon ,  Hyung Jong Lee ,  Boram Im

IPC: H01L23/52 ,  H01L23/528 ,  H01L23/535 ,  H01L23/532 ,  H01L29/78 ,  H01L21/8238 ,  H01L27/02 ,  H01L29/165

CPC classification number: H01L23/5283 ,  H01L21/823871 ,  H01L23/53266 ,  H01L23/535 ,  H01L27/0207 ,  H01L29/165 ,  H01L29/7848 ,  H01L29/7851

Abstract: The inventive concepts relate to a semiconductor device including a field effect transistor and a method for manufacturing the same. The semiconductor device includes a substrate including first and second source/drain regions formed thereon, a gate electrode intersecting the substrate between the first and second source/drain regions, and an active contact electrically connecting the first and second source/drain regions to each other. The active contact is spaced apart from the gate electrode. The active contact includes first sub-contacts provided on the first and second source/drain regions so as to be connected to the first and second source/drain regions, respectively, a second sub-contact provided on the first sub-contacts to electrically connect the first sub-contacts to each other, and a barrier layer provided between the second sub-contact and each of the first sub-contacts.

公开(公告)号：US09780033B2

公开(公告)日：2017-10-03

申请号：US15053182

申请日：2016-02-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changseop Yoon ,  Kwangsub Yoon ,  Jongmil Youn ,  Hyung Jong Lee

IPC: H01L23/528 ,  H01L21/8238 ,  H01L29/06 ,  H01L27/02 ,  H01L23/485

CPC classification number: H01L23/5283 ,  H01L21/823871 ,  H01L23/485 ,  H01L27/0207 ,  H01L29/0653

Abstract: A semiconductor device includes a substrate including PMOSFET and NMOSFET regions, a first gate structure extending in a first direction and crossing the PMOSFET and NMOSFET regions, and a gate contact on and connected to the first gate structure, the gate contact being between the PMOSFET and NMOSFET regions, the gate contact including a first sub contact in contact with a top surface of the first gate structure, the first sub contact including a vertical extending portion extending vertically toward the substrate along one sidewall of the first gate structure, and a second sub contact spaced apart from the first gate structure, a top surface of the second sub contact being positioned at a same level as a top surface of the first sub contact.

公开(公告)号：US20190296027A1

公开(公告)日：2019-09-26

申请号：US16437914

申请日：2019-06-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changseop Yoon

IPC: H01L27/11

Abstract: A semiconductor device includes a substrate including first and second active patterns thereon, a first gate electrode intersecting the first and second active patterns, first and second source/drain regions on the first and second active patterns, respectively, at one side of the first gate electrode, and an active contact on the first source/drain region so as to be electrically connected to the first source/drain region. The active contact includes a first sub-contact and a second sub-contact. The second sub-contact includes a vertical extension vertically extending toward the substrate. A bottom surface of the vertical extension is lower than a bottom surface of the first sub-contact.

公开(公告)号：US10388604B2

公开(公告)日：2019-08-20

申请号：US15956006

申请日：2018-04-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changseop Yoon ,  Hyung Jong Lee ,  Boram Im

IPC: H01L21/84 ,  H01L27/02 ,  H01L27/12 ,  H01L29/78 ,  H01L21/768 ,  H01L23/528 ,  H01L23/532 ,  H01L23/535 ,  H01L27/092 ,  H01L29/165 ,  H01L21/8238

Abstract: The inventive concepts relate to a semiconductor device including a field effect transistor and a method for manufacturing the same. The semiconductor device includes a substrate including first and second source/drain regions formed thereon, a gate electrode intersecting the substrate between the first and second source/drain regions, and an active contact electrically connecting the first and second source/drain regions to each other. The active contact is spaced apart from the gate electrode. The active contact includes first sub-contacts provided on the first and second source/drain regions so as to be connected to the first and second source/drain regions, respectively, a second sub-contact provided on the first sub-contacts to electrically connect the first sub-contacts to each other, and a barrier layer provided between the second sub-contact and each of the first sub-contacts.

公开(公告)号：US10366997B2

公开(公告)日：2019-07-30

申请号：US15821230

申请日：2017-11-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changseop Yoon

IPC: H01L27/11

Abstract: A semiconductor device includes a substrate including first and second active patterns thereon, a first gate electrode intersecting the first and second active patterns, first and second source/drain regions on the first and second active patterns, respectively, at one side of the first gate electrode, and an active contact on the first source/drain region so as to be electrically connected to the first source/drain region. The active contact includes a first sub-contact and a second sub-contact. The second sub-contact includes a vertical extension vertically extending toward the substrate. A bottom surface of the vertical extension is lower than a bottom surface of the first sub-contact.

公开(公告)号：US10229911B2

公开(公告)日：2019-03-12

申请号：US15685657

申请日：2017-08-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changseop Yoon ,  Sungmin Kim ,  Chiwon Cho

IPC: H01L27/092 ,  H01L27/088 ,  H01L29/66 ,  H01L29/06 ,  H01L23/485 ,  H01L21/8238 ,  H01L27/02 ,  H01L27/11 ,  H01L29/417 ,  H01L29/165 ,  H01L21/8234

Abstract: A semiconductor device including a first fin active area substantially parallel to a second fin active area, a first source/drain in the first fin active area, a second source/drain in the second fin active area, a first contact plug on the first source/drain, and a second contact plug on the second source/drain. The center of the second contact plug is offset from the center of the second source/drain.

公开(公告)号：US20180233450A1

公开(公告)日：2018-08-16

申请号：US15956006

申请日：2018-04-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changseop Yoon ,  Hyung Jong Lee ,  Boram Im

IPC: H01L23/528 ,  H01L29/78 ,  H01L27/02 ,  H01L23/532 ,  H01L21/8238 ,  H01L23/535 ,  H01L29/165

CPC classification number: H01L23/5283 ,  H01L21/76895 ,  H01L21/823821 ,  H01L21/823871 ,  H01L21/845 ,  H01L23/53266 ,  H01L23/535 ,  H01L27/0207 ,  H01L27/0924 ,  H01L27/1211 ,  H01L29/165 ,  H01L29/7848 ,  H01L29/7851

Abstract: The inventive concepts relate to a semiconductor device including a field effect transistor and a method for manufacturing the same. The semiconductor device includes a substrate including first and second source/drain regions formed thereon, a gate electrode intersecting the substrate between the first and second source/drain regions, and an active contact electrically connecting the first and second source/drain regions to each other. The active contact is spaced apart from the gate electrode. The active contact includes first sub-contacts provided on the first and second source/drain regions so as to be connected to the first and second source/drain regions, respectively, a second sub-contact provided on the first sub-contacts to electrically connect the first sub-contacts to each other, and a barrier layer provided between the second sub-contact and each of the first sub-contacts.

公开(公告)号：US20180108663A1

公开(公告)日：2018-04-19

申请号：US15821230

申请日：2017-11-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changseop Yoon

IPC: H01L27/11

CPC classification number: H01L27/1104

Abstract: A semiconductor device includes a substrate including first and second active patterns thereon, a first gate electrode intersecting the first and second active patterns, first and second source/drain regions on the first and second active patterns, respectively, at one side of the first gate electrode, and an active contact on the first source/drain region so as to be electrically connected to the first source/drain region. The active contact includes a first sub-contact and a second sub-contact. The second sub-contact includes a vertical extension vertically extending toward the substrate. A bottom surface of the vertical extension is lower than a bottom surface of the first sub-contact.

公开(公告)号：US10283502B2

公开(公告)日：2019-05-07

申请号：US15724874

申请日：2017-10-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changseop Yoon ,  Jayeol Goo ,  Sang Gil Kim

IPC: H01L27/088 ,  H01L29/08 ,  H01L29/423 ,  H01L29/78 ,  H01L21/8234 ,  H01L27/092

Abstract: A semiconductor device includes a plurality of active patterns protruding from a substrate, a gate structure intersecting the plurality of active patterns, a plurality of source/drain regions respectively on the plurality of active patterns at opposite sides of the gate structure, and source/drain contacts intersecting the plurality of active patterns, each of the source/drain contacts connected in common to the source/drain regions thereunder, each of the plurality of source/drain regions including a first portion in contact with a top surface of the active pattern thereunder, the first portion having a width substantially increasing as a distance from the substrate increases, and a second portion extending from the first portion, the second portion having a width substantially decreasing as a distance from the substrate increases, bottom surfaces of the source/drain contacts being lower than an interface between the first and second portions.