公开(公告)号：US20230170302A1

公开(公告)日：2023-06-01

申请号：US17934743

申请日：2022-09-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jimo Gu ,  Jiyoung Kim ,  Woosung Yang ,  Sukkang Sung ,  Chang-Sup Lee

IPC: H01L23/535 ,  H01L27/11556 ,  H01L27/11529 ,  H01L27/11582 ,  H01L27/11573

CPC classification number: H01L23/535 ,  H01L27/11556 ,  H01L27/11529 ,  H01L27/11582 ,  H01L27/11573

Abstract: Disclosed are semiconductor devices and electronic systems including the same. A semiconductor device includes a substrate including a cell array region and a connection region, an electrode structure including electrodes and dielectric layers that are stacked in alternating fashion, each of the plurality of electrodes including an electrode part on the cell array region and a pad part on the connection region, dummy vertical structures on the connection region and penetrating the pad parts of each of the electrodes, and a cell contact plug on the connection region and coupled to the pad part of each of the electrodes. A thickness of the pad part is greater than that of the electrode part. The pad part has a lower portion connected to the electrode part and an upper portion on the lower portion. Between adjacent ones of the dummy vertical structures, a width of the upper portion is not less than that of the lower portion.

公开(公告)号：US20220328520A1

公开(公告)日：2022-10-13

申请号：US17851310

申请日：2022-06-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chang-Sup Lee ,  Sung-Hun Lee ,  Joonhee Lee ,  Seong Soon Cho

IPC: H01L27/11582 ,  H01L27/1157 ,  H01L27/11565 ,  H01L27/11575 ,  H01L23/522 ,  H01L23/528 ,  H01L23/535 ,  H01L27/11556 ,  H01L29/423

Abstract: A three-dimensional semiconductor memory device includes a substrate including a cell array region and a connection region and an electrode structure including first and second electrodes alternatingly and vertically stacked on the substrate and having a stair-step structure on the connection region. Each of the first and second electrodes may include electrode portions provided on the cell array region to extend in a first direction and to be spaced apart from each other in a second direction perpendicular to the first direction, an electrode connecting portion provided on the connection region to extend in the second direction and to horizontally connect the electrode portions to each other, and protrusions provided on the connection region to extend from the electrode connecting portion in the first direction and to be spaced apart from each other in the second direction.

公开(公告)号：US20200227438A1

公开(公告)日：2020-07-16

申请号：US16837169

申请日：2020-04-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chang-Sup Lee ,  Sung-Hun Lee ,  Joonhee Lee ,  Seong Soon Cho

IPC: H01L27/11582 ,  H01L27/1157 ,  H01L27/11565 ,  H01L27/11575 ,  H01L23/522 ,  H01L23/528 ,  H01L23/535 ,  H01L27/11556 ,  H01L29/423

Abstract: A three-dimensional semiconductor memory device includes a substrate including a cell array region and a connection region and an electrode structure including first and second electrodes alternatingly and vertically stacked on the substrate and having a stair-step structure on the connection region. Each of the first and second electrodes may include electrode portions provided on the cell array region to extend in a first direction and to be spaced apart from each other in a second direction perpendicular to the first direction, an electrode connecting portion provided on the connection region to extend in the second direction and to horizontally connect the electrode portions to each other, and protrusions provided on the connection region to extend from the electrode connecting portion in the first direction and to be spaced apart from each other in the second direction.

公开(公告)号：US11854975B2

公开(公告)日：2023-12-26

申请号：US17459406

申请日：2021-08-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Hun Lee ,  Seokjung Yun ,  Chang-Sup Lee ,  Seong Soon Cho ,  Jeehoon Han

IPC: H01L23/528 ,  H10B41/20 ,  H10B41/27 ,  H10B43/10 ,  H10B43/20 ,  H10B43/27 ,  H10B43/35 ,  H10B43/50 ,  H01L21/768 ,  H01L23/522

CPC classification number: H01L23/5283 ,  H01L21/76816 ,  H01L21/76877 ,  H01L23/5226 ,  H10B41/20 ,  H10B41/27 ,  H10B43/10 ,  H10B43/20 ,  H10B43/27 ,  H10B43/35 ,  H10B43/50

Abstract: A three-dimensional (3D) semiconductor device includes a stack structure including first and second stacks stacked on a substrate. Each of the first and second stacks includes a first electrode and a second electrode on the first electrode. A sidewall of the second electrode of the first stack is horizontally spaced apart from a sidewall of the second electrode of the second stack by a first distance. A sidewall of the first electrode is horizontally spaced apart from the sidewall of the second electrode by a second distance in each of the first and second stacks. The second distance is smaller than a half of the first distance.

公开(公告)号：US20200251417A1

公开(公告)日：2020-08-06

申请号：US16853850

申请日：2020-04-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Hun Lee ,  Seokjung Yun ,  Chang-Sup Lee ,  Seong Soon Cho ,  Jeehoon Han

IPC: H01L23/528 ,  H01L27/11582 ,  H01L27/1157 ,  H01L23/522 ,  H01L21/768 ,  H01L27/11575 ,  H01L27/11565 ,  H01L27/11556 ,  H01L27/11551 ,  H01L27/11578

Abstract: A three-dimensional (3D) semiconductor device includes a stack structure including first and second stacks stacked on a substrate. Each of the first and second stacks includes a first electrode and a second electrode on the first electrode. A sidewall of the second electrode of the first stack is horizontally spaced apart from a sidewall of the second electrode of the second stack by a first distance. A sidewall of the first electrode is horizontally spaced apart from the sidewall of the second electrode by a second distance in each of the first and second stacks. The second distance is smaller than a half of the first distance.

公开(公告)号：US11374019B2

公开(公告)日：2022-06-28

申请号：US16837169

申请日：2020-04-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chang-Sup Lee ,  Sung-Hun Lee ,  Joonhee Lee ,  Seong Soon Cho

IPC: H01L23/528 ,  H01L27/11565 ,  H01L27/11582 ,  H01L27/1157 ,  H01L27/11575 ,  H01L23/522 ,  H01L23/535 ,  H01L27/11556 ,  H01L29/423

Abstract: A three-dimensional semiconductor memory device includes a substrate including a cell array region and a connection region and an electrode structure including first and second electrodes alternatingly and vertically stacked on the substrate and having a stair-step structure on the connection region. Each of the first and second electrodes may include electrode portions provided on the cell array region to extend in a first direction and to be spaced apart from each other in a second direction perpendicular to the first direction, an electrode connecting portion provided on the connection region to extend in the second direction and to horizontally connect the electrode portions to each other, and protrusions provided on the connection region to extend from the electrode connecting portion in the first direction and to be spaced apart from each other in the second direction.

公开(公告)号：US20210391260A1

公开(公告)日：2021-12-16

申请号：US17459406

申请日：2021-08-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Hun Lee ,  Seokjung Yun ,  Chang-Sup Lee ,  Seong Soon Cho ,  Jeehoon Han

IPC: H01L23/528 ,  H01L27/11578 ,  H01L27/11551 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/11575 ,  H01L21/768 ,  H01L23/522 ,  H01L27/1157 ,  H01L27/11582

Abstract: A three-dimensional (3D) semiconductor device includes a stack structure including first and second stacks stacked on a substrate. Each of the first and second stacks includes a first electrode and a second electrode on the first electrode. A sidewall of the second electrode of the first stack is horizontally spaced apart from a sidewall of the second electrode of the second stack by a first distance. A sidewall of the first electrode is horizontally spaced apart from the sidewall of the second electrode by a second distance in each of the first and second stacks. The second distance is smaller than a half of the first distance.

公开(公告)号：US11107765B2

公开(公告)日：2021-08-31

申请号：US16853850

申请日：2020-04-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Hun Lee ,  Seokjung Yun ,  Chang-Sup Lee ,  Seong Soon Cho ,  Jeehoon Han

IPC: H01L23/528 ,  H01L27/11578 ,  H01L27/11551 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/11575 ,  H01L21/768 ,  H01L23/522 ,  H01L27/1157 ,  H01L27/11582

Abstract: A three-dimensional (3D) semiconductor device includes a stack structure including first and second stacks stacked on a substrate. Each of the first and second stacks includes a first electrode and a second electrode on the first electrode. A sidewall of the second electrode of the first stack is horizontally spaced apart from a sidewall of the second electrode of the second stack by a first distance. A sidewall of the first electrode is horizontally spaced apart from the sidewall of the second electrode by a second distance in each of the first and second stacks. The second distance is smaller than a half of the first distance.

公开(公告)号：US10211154B2

公开(公告)日：2019-02-19

申请号：US15350305

申请日：2016-11-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Hun Lee ,  Seokjung Yun ,  Chang-Sup Lee ,  Seong Soon Cho ,  Jeehoon Han

IPC: H01L23/528 ,  H01L23/522 ,  H01L27/115 ,  H01L27/11578 ,  H01L27/11551 ,  H01L27/11556 ,  H01L21/768 ,  H01L27/1157 ,  H01L27/11582 ,  H01L27/11565 ,  H01L27/11575

Abstract: A three-dimensional (3D) semiconductor device includes a stack structure including first and second stacks stacked on a substrate. Each of the first and second stacks includes a first electrode and a second electrode on the first electrode. A sidewall of the second electrode of the first stack is horizontally spaced apart from a sidewall of the second electrode of the second stack by a first distance. A sidewall of the first electrode is horizontally spaced apart from the sidewall of the second electrode by a second distance in each of the first and second stacks. The second distance is smaller than a half of the first distance.

公开(公告)号：US12183677B2

公开(公告)日：2024-12-31

申请号：US18526208

申请日：2023-12-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Hun Lee ,  Seokjung Yun ,  Chang-Sup Lee ,  Seong Soon Cho ,  Jeehoon Han

IPC: H01L23/528 ,  H01L21/768 ,  H01L23/522 ,  H10B41/20 ,  H10B41/27 ,  H10B43/10 ,  H10B43/20 ,  H10B43/27 ,  H10B43/35 ,  H10B43/50

Abstract: A three-dimensional (3D) semiconductor device includes a stack structure including first and second stacks stacked on a substrate. Each of the first and second stacks includes a first electrode and a second electrode on the first electrode. A sidewall of the second electrode of the first stack is horizontally spaced apart from a sidewall of the second electrode of the second stack by a first distance. A sidewall of the first electrode is horizontally spaced apart from the sidewall of the second electrode by a second distance in each of the first and second stacks. The second distance is smaller than a half of the first distance.