公开(公告)号：US20170338328A1

公开(公告)日：2017-11-23

申请号：US15276784

申请日：2016-09-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wei-E WANG ,  Mark S. RODDER ,  Borna J. OBRADOVIC ,  Dharmendar Reddy PALLE ,  Joon Goo HONG

IPC: H01L29/66 ,  H01L29/04 ,  H01L21/02 ,  H01L29/10 ,  H01L29/08

CPC classification number: H01L29/66553 ,  H01L21/02236 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0259 ,  H01L29/045 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/1033 ,  H01L29/1054 ,  H01L29/66636 ,  H01L29/78

Abstract: A method to form a nanosheet stack for a semiconductor device includes forming a stack of a plurality of sacrificial layers and at least one channel layer on an underlayer in which a sacrificial layer is in contact with the underlayer, each channel layer being in contact with at least one sacrificial layer, the sacrificial layers are formed from SiGe and the at least one channel layer is formed from Si; forming at least one source/drain trench region in the stack to expose surfaces of the SiGe sacrificial layers and a surface of the at least one Si channel layer; and oxidizing the exposed surfaces of the SiGe sacrificial layers and the exposed surface of the at least one Si layer in an environment of wet oxygen, or ozone and UV.

公开(公告)号：US20170263728A1

公开(公告)日：2017-09-14

申请号：US15267134

申请日：2016-09-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jorge A. KITTL ,  Ganesh HEGDE ,  Robert Christopher BOWEN ,  Borna J. OBRADOVIC ,  Mark S. RODDER

IPC: H01L29/66 ,  H01L29/06 ,  H01L21/02 ,  H01L29/78

CPC classification number: H01L29/6681 ,  H01L21/02439 ,  H01L21/02447 ,  H01L21/0245 ,  H01L21/02485 ,  H01L21/02532 ,  H01L21/02603 ,  H01L21/0475 ,  H01L21/30604 ,  H01L21/465 ,  H01L29/0673 ,  H01L29/66439 ,  H01L29/6653 ,  H01L29/66553 ,  H01L29/7848 ,  H01L29/7853

Abstract: A stack for a semiconductor device and a method for making the stack are disclosed. The stack includes a plurality of sacrificial layers in which each sacrificial layer has a first lattice parameter; and at least one channel layer that has a second lattice parameter in which the first lattice parameter is less than or equal to the second lattice parameter, and each channel layer is disposed between and in contact with two sacrificial layers and includes a compressive strain or a neutral strain based on a difference between the first lattice parameter and the second lattice parameter.