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公开(公告)号：US20200294565A1
公开(公告)日：2020-09-17
申请号：US16539775
申请日：2019-08-13
Applicant: Samsung Electronics Co., Ltd.
Inventor： Dmytro Apalkov , Sebastian Schafer
Abstract: A memory system includes a memory track including a plurality of magnetic domains having alternating magnetic polarities and positioned along a path, and a plurality of domain walls separating adjacent ones of the plurality of magnetic domains, each one of the domain walls being configured to store data.
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公开(公告)号：US10297300B2
公开(公告)日：2019-05-21
申请号：US14854251
申请日：2015-09-15
Applicant: Samsung Electronics Co., LTD.
Inventor： Sebastian Schafer , Dmytro Apalkov , Alexey Vasilyevitch Khvalkovskiy , Vladimir Nikitin , Robert Beach , Zheng Duan
Abstract: A method for measuring a temperature of magnetic junction switchable using spin transfer. The magnetic junction includes at least one magnetic layer. The method includes measuring a temperature variation of at least one magnetic characteristic for the magnetic layer(s) versus temperature. The method also includes measuring a bias variation in the magnetic characteristic versus an electrical bias for the magnetic junction. This measurement is performed such that spin transfer torque-induced variation(s) in the magnetic characteristic(s) are accounted for. The temperature versus the electrical bias for the magnetic junction is determined based on the temperature variation and the bias variation.
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公开(公告)号：US20180294024A1
公开(公告)日：2018-10-11
申请号：US16005595
申请日：2018-06-11
Applicant: Samsung Electronics Co., LTD.
Inventor： Sebastian Schafer , Dmytro Apalkov , Alexey Vasilyevitch Khvalkovskiy , Vladimir Nikitin , Robert Beach , Zheng Duan
CPC classification number: G11C11/161 , G01K7/36 , G01R33/098 , G01R33/14 , G11C7/04 , G11C11/16 , G11C11/1695 , G11C29/50 , G11C2029/5002
Abstract: A method for measuring a temperature of magnetic junction switchable using spin transfer. The magnetic junction includes at least one magnetic layer. The method includes measuring a temperature variation of at least one magnetic characteristic for the magnetic layer(s) versus temperature. The method also includes measuring a bias variation in the magnetic characteristic versus an electrical bias for the magnetic junction. This measurement is performed such that spin transfer torque-induced variation(s) in the magnetic characteristic(s) are accounted for. The temperature versus the electrical bias for the magnetic junction is determined based on the temperature variation and the bias variation.
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4.发明授权Magnetic junctions having a magnetoelastic free layer programmable using spin transfer torque 有权具有使用自旋转移扭矩编程的磁弹性自由层的磁结公开(公告)号：US09489998B1
公开(公告)日：2016-11-08
申请号：US15003360
申请日：2016-01-21
Applicant: Samsung Electronics Co., LTD.
Inventor： Sebastian Schafer
CPC classification number: G11C11/161 , G11C11/1659 , G11C11/1675 , H01L43/08
Abstract: A magnetic junction and method and programming the magnetic junction are described. The magnetic junction has a free layer, a reference layer, and a nonmagnetic spacer layer between reference and free layers. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. The free layer has a perpendicular magnetic anisotropy exceeding its out-of-plane demagnetization energy a quiescent state. The free layer has a magnetostriction such that the perpendicular magnetic anisotropy changes in the presence of a programming voltage applied for the magnetic junction, canting that the magnetic moment by at least five degrees from its quiescent direction. The programming voltage is at least 0.1 volt and not more than 2 volts. The nonmagnetic spacer layer is an insulating tunneling barrier layer and/or the magnetic junction includes an additional insulating layer adjacent to the opposite interface of the free layer.
Abstract translation: 描述了磁结和方法并编程磁结。 磁性结点具有参考层和自由层之间的自由层，参考层和非磁性间隔层。 当写入电流通过磁结时，自由层可在稳定的磁状态之间切换。 自由层的垂直磁各向异性超过其平面外退磁能的静止状态。 自由层具有磁致伸缩，使得在存在施加到磁结的编程电压的情况下，垂直磁各向异性发生变化，从而将磁矩从其静态方向转移至少五度。 编程电压至少为0.1伏且不大于2伏。 非磁性间隔层是绝缘隧道势垒层和/或磁结包括邻近自由层的相对界面的附加绝缘层。
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公开(公告)号：US10170518B2
公开(公告)日：2019-01-01
申请号：US15659613
申请日：2017-07-25
Applicant: Samsung Electronics Co., LTD.
Inventor： Vladimir Nikitin , Dmytro Apalkov , Sebastian Schafer
Abstract: Magnetic junctions usable in a magnetic device and a method for providing the magnetic junctions are described. A patterned seed layer is provided. The patterned seed layer includes magnetic seed islands interspersed with an insulating matrix. At least a portion of the magnetoresistive stack is provided after the patterned seed layer. The magnetoresistive stack includes at least one magnetic segregating layer. The magnetic segregating layer(s) include at least one magnetic material and at least one insulator. The method anneals the at least the portion of the magnetoresistive stack such that the at least one magnetic segregating layer segregates. The constituents of the magnetic segregating layer segregate such that portions of magnetic material(s) align with the magnetic seed islands(s) and such that portions of the insulator(s) align with the insulating matrix.
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Patent Agency Ranking
6.发明申请公开(公告)号：US20180350873A1
公开(公告)日：2018-12-06
申请号：US15659613
申请日：2017-07-25
Applicant: Samsung Electronics Co., LTD.
Inventor： Vladimir Nikitin , Dmytro Apalkov , Sebastian Schafer
CPC classification number: H01L27/222 , G11C11/1673 , G11C11/1675 , H01L43/08 , H01L43/10 , H01L43/12
Abstract: Magnetic junctions usable in a magnetic device and a method for providing the magnetic junctions are described. A patterned seed layer is provided. The patterned seed layer includes magnetic seed islands interspersed with an insulating matrix. At least a portion of the magnetoresistive stack is provided after the patterned seed layer. The magnetoresistive stack includes at least one magnetic segregating layer. The magnetic segregating layer(s) include at least one magnetic material and at least one insulator. The method anneals the at least the portion of the magnetoresistive stack such that the at least one magnetic segregating layer segregates. The constituents of the magnetic segregating layer segregate such that portions of magnetic material(s) align with the magnetic seed islands(s) and such that portions of the insulator(s) align with the insulating matrix.
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7.发明申请公开(公告)号：US20160104544A1
公开(公告)日：2016-04-14
申请号：US14854251
申请日：2015-09-15
Applicant: Samsung Electronics Co., LTD.
Inventor： Sebastian Schafer , Dmytro Apalkov , Alexey Vasilyevitch Khvalkovskiy , Vladimir Nikitin , Robert Beach , Zheng Duan
CPC classification number: G11C11/161 , G01K7/36 , G01R33/098 , G01R33/14 , G11C7/04 , G11C11/16 , G11C11/1695 , G11C29/50 , G11C2029/5002
Abstract: A method for measuring a temperature of magnetic junction switchable using spin transfer. The magnetic junction includes at least one magnetic layer. The method includes measuring a temperature variation of at least one magnetic characteristic for the magnetic layer(s) versus temperature. The method also includes measuring a bias variation in the magnetic characteristic versus an electrical bias for the magnetic junction. This measurement is performed such that spin transfer torque-induced variation(s) in the magnetic characteristic(s) are accounted for. The temperature versus the electrical bias for the magnetic junction is determined based on the temperature variation and the bias variation.
Abstract translation: 使用自旋转移测量可以切换的磁结温度的方法。 磁结包括至少一个磁性层。 该方法包括测量磁层对于温度的至少一个磁特性的温度变化。 该方法还包括测量磁特性相对于磁结的电偏压的偏差变化。 进行这种测量，使得考虑到磁特性中的自旋转矩扭矩引起的变化。 基于温度变化和偏差变化确定磁结的温度与电偏差。
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公开(公告)号：US10885961B2
公开(公告)日：2021-01-05
申请号：US16539775
申请日：2019-08-13
Applicant: Samsung Electronics Co., Ltd.
Inventor： Dmytro Apalkov , Sebastian Schafer
Abstract: A memory system includes a memory track including a plurality of magnetic domains having alternating magnetic polarities and positioned along a path, and a plurality of domain walls separating adjacent ones of the plurality of magnetic domains, each one of the domain walls being configured to store data.
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公开(公告)号：US10276226B2
公开(公告)日：2019-04-30
申请号：US16005595
申请日：2018-06-11
Applicant: Samsung Electronics Co., LTD.
Inventor： Sebastian Schafer , Dmytro Apalkov , Alexey Vasilyevitch Khvalkovskiy , Vladimir Nikitin , Robert Beach , Zheng Duan
Abstract: A method for measuring a temperature of magnetic junction switchable using spin transfer. The magnetic junction includes at least one magnetic layer. The method includes measuring a temperature variation of at least one magnetic characteristic for the magnetic layer(s) versus temperature. The method also includes measuring a bias variation in the magnetic characteristic versus an electrical bias for the magnetic junction. This measurement is performed such that spin transfer torque-induced variation(s) in the magnetic characteristic(s) are accounted for. The temperature versus the electrical bias for the magnetic junction is determined based on the temperature variation and the bias variation.
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公开(公告)号：US10164177B2
公开(公告)日：2018-12-25
申请号：US15445695
申请日：2017-02-28
Applicant: Samsung Electronics Co., LTD.
Inventor： Sebastian Schafer , Dmytro Apalkov , Vladimir Nikitin , Don Koun Lee
Abstract: A magnetic junction usable in a magnetic device and a method for providing the magnetic junction are described. A first portion of a magnetoresistive stack corresponding to the magnetic junction is provided. Providing this portion of the magnetoresistive stack includes providing at least one layer for a free layer of the magnetic junction. A second portion of the magnetoresistive stack is provided after the step of providing the first portion of the magnetoresistive stack. The magnetoresistive stack is patterned to provide the magnetic junction after the step of providing the second portion of the magnetoresistive stack. An ambient temperature for the magnetoresistive stack and the magnetic junction does not exceed a crystallization temperature of the free layer after the step of providing the free layer through the step of patterning the magnetoresistive stack. The magnetic junction is annealed at an anneal temperature not less than the crystallization temperature after the step of patterning the magnetoresistive stack.
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