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公开(公告)号：US09735350B2
公开(公告)日：2017-08-15
申请号：US14981107
申请日：2015-12-28
Applicant: Samsung Electronics Co., LTD.
Inventor： Robert Beach , Roman Chepulskyy , Dustin William Erickson , Vladimir Nikitin
Abstract: A method provides a magnetic junction having a top and sides. A first magnetic layer, a nonmagnetic spacer layer and a second magnetic layer are deposited. The nonmagnetic spacer layer is between the first and second magnetic layers. A free layer is one of the magnetic layers. A reference layer is the other of the magnetic layers. The second magnetic layer includes an amorphous magnetic layer having nonmagnetic constituent(s) that are glass-forming. An anneal is performed in a gas having an affinity for the nonmagnetic constituent(s). The gas includes at least one of first and second gases. The first gas forms a gaseous compound with the nonmagnetic constituent(s) The second gas forms a solid compound with the nonmagnetic constituent(s). The second gas is usable if the anneal is performed after the magnetic junction has been defined. The solid compound is at least on the sides of the magnetic junction.
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2.发明申请公开(公告)号：US20160104544A1
公开(公告)日：2016-04-14
申请号：US14854251
申请日：2015-09-15
Applicant: Samsung Electronics Co., LTD.
Inventor： Sebastian Schafer , Dmytro Apalkov , Alexey Vasilyevitch Khvalkovskiy , Vladimir Nikitin , Robert Beach , Zheng Duan
CPC classification number: G11C11/161 , G01K7/36 , G01R33/098 , G01R33/14 , G11C7/04 , G11C11/16 , G11C11/1695 , G11C29/50 , G11C2029/5002
Abstract: A method for measuring a temperature of magnetic junction switchable using spin transfer. The magnetic junction includes at least one magnetic layer. The method includes measuring a temperature variation of at least one magnetic characteristic for the magnetic layer(s) versus temperature. The method also includes measuring a bias variation in the magnetic characteristic versus an electrical bias for the magnetic junction. This measurement is performed such that spin transfer torque-induced variation(s) in the magnetic characteristic(s) are accounted for. The temperature versus the electrical bias for the magnetic junction is determined based on the temperature variation and the bias variation.
Abstract translation: 使用自旋转移测量可以切换的磁结温度的方法。 磁结包括至少一个磁性层。 该方法包括测量磁层对于温度的至少一个磁特性的温度变化。 该方法还包括测量磁特性相对于磁结的电偏压的偏差变化。 进行这种测量，使得考虑到磁特性中的自旋转矩扭矩引起的变化。 基于温度变化和偏差变化确定磁结的温度与电偏差。
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3.发明申请METHOD AND SYSTEM FOR REMOVING BORON FROM MAGNETIC JUNCTIONS USABLE IN SPIN TRANSFER TORQUE MEMORY APPLICATIONS 有权用于从转子扭转记忆体应用中可用的磁性结移除硼的方法和系统公开(公告)号：US20160197270A1
公开(公告)日：2016-07-07
申请号：US14981107
申请日：2015-12-28
Applicant: Samsung Electronics Co., LTD.
Inventor： Robert Beach , Roman Chepulskyy , Dustin William Erickson , Vladimir Nikitin
Abstract: A method provides a magnetic junction having a top and sides. A first magnetic layer, a nonmagnetic spacer layer and a second magnetic layer are deposited. The nonmagnetic spacer layer is between the first and second magnetic layers. A free layer is one of the magnetic layers. A reference layer is the other of the magnetic layers. The second magnetic layer includes an amorphous magnetic layer having nonmagnetic constituent(s) that are glass-formming. An anneal is performed in a gas having an affinity for the nonmagnetic constituent(s). The gas includes at least one of first and second gases. The first gas forms a gaseous compound with the nonmagnetic constituent(s) The second gas forms a solid compound with the nonmagnetic constituent(s). The second gas is usable if the anneal is performed after the magnetic junction has been defined. The solid compound is at least on the sides of the magnetic junction.
Abstract translation: 一种方法提供具有顶部和侧面的磁结。 沉积第一磁性层，非磁性间隔层和第二磁性层。 非磁性间隔层位于第一和第二磁性层之间。 自由层是磁性层之一。 参考层是另一个磁性层。 第二磁性层包括具有玻璃形成的非磁性成分的非晶磁性层。 在对非磁性成分具有亲和性的气体中进行退火。 气体包括第一和第二气体中的至少一种。 第一气体与非磁性成分形成气态化合物第二气体与非磁性成分形成固体化合物。 如果在定义了磁性结后进行退火，则可以使用第二种气体。 固体化合物至少在磁性结的两侧。
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Patent Agency Ranking
公开(公告)号：US10297300B2
公开(公告)日：2019-05-21
申请号：US14854251
申请日：2015-09-15
Applicant: Samsung Electronics Co., LTD.
Inventor： Sebastian Schafer , Dmytro Apalkov , Alexey Vasilyevitch Khvalkovskiy , Vladimir Nikitin , Robert Beach , Zheng Duan
Abstract: A method for measuring a temperature of magnetic junction switchable using spin transfer. The magnetic junction includes at least one magnetic layer. The method includes measuring a temperature variation of at least one magnetic characteristic for the magnetic layer(s) versus temperature. The method also includes measuring a bias variation in the magnetic characteristic versus an electrical bias for the magnetic junction. This measurement is performed such that spin transfer torque-induced variation(s) in the magnetic characteristic(s) are accounted for. The temperature versus the electrical bias for the magnetic junction is determined based on the temperature variation and the bias variation.
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公开(公告)号：US10274571B2
公开(公告)日：2019-04-30
申请号：US15478226
申请日：2017-04-03
Applicant: Samsung Electronics Co., LTD.
Inventor： Robert Beach , Dmytro Apalkov , Volodymyr Voznyuk , Ilya Krivorotov , Chengcen Sha
IPC: G01R33/60 , H01L27/22 , H01L43/08 , G11C11/02 , H01L43/12 , G01N24/10 , G11C29/02 , G11C29/24 , G11C29/50 , G11C11/16
Abstract: A method and apparatus determine an exchange stiffness of a free layer residing in a magnetic junction. The method includes performing spin torque ferromagnetic resonance (ST-FMR) measurements for the magnetic junction. The ST-FMR measurements indicate characteristic frequencies corresponding to spin wave modes in the free layer. The method also includes calculating the exchange stiffness of the free layer based upon the plurality of characteristic frequencies. In some embodiments, the magnetic junction resides on a wafer including other magnetic junctions for a device. The magnetic junctions may be arranged as a magnetic memory. The magnetic junction undergoing ST-FMR has a different aspect ratio than the magnetic junctions.
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公开(公告)号：US20180294024A1
公开(公告)日：2018-10-11
申请号：US16005595
申请日：2018-06-11
Applicant: Samsung Electronics Co., LTD.
Inventor： Sebastian Schafer , Dmytro Apalkov , Alexey Vasilyevitch Khvalkovskiy , Vladimir Nikitin , Robert Beach , Zheng Duan
CPC classification number: G11C11/161 , G01K7/36 , G01R33/098 , G01R33/14 , G11C7/04 , G11C11/16 , G11C11/1695 , G11C29/50 , G11C2029/5002
Abstract: A method for measuring a temperature of magnetic junction switchable using spin transfer. The magnetic junction includes at least one magnetic layer. The method includes measuring a temperature variation of at least one magnetic characteristic for the magnetic layer(s) versus temperature. The method also includes measuring a bias variation in the magnetic characteristic versus an electrical bias for the magnetic junction. This measurement is performed such that spin transfer torque-induced variation(s) in the magnetic characteristic(s) are accounted for. The temperature versus the electrical bias for the magnetic junction is determined based on the temperature variation and the bias variation.
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公开(公告)号：US20180205001A1
公开(公告)日：2018-07-19
申请号：US15478226
申请日：2017-04-03
Applicant: Samsung Electronics Co., LTD.
Inventor： Robert Beach , Dmytro Apalkov , Volodymyr Voznyuk , Ilya Krivorotov , Chengcen Sha
CPC classification number: G01R33/60 , G01N24/10 , G11C11/02 , G11C11/1675 , G11C29/021 , G11C29/028 , G11C29/24 , G11C29/50008 , G11C2029/5006 , H01L27/222 , H01L43/08 , H01L43/12
Abstract: A method and apparatus determine an exchange stiffness of a free layer residing in a magnetic junction. The method includes performing spin torque ferromagnetic resonance (ST-FMR) measurements for the magnetic junction. The ST-FMR measurements indicate characteristic frequencies corresponding to spin wave modes in the free layer. The method also includes calculating the exchange stiffness of the free layer based upon the plurality of characteristic frequencies. In some embodiments, the magnetic junction resides on a wafer including other magnetic junctions for a device. The magnetic junctions may be arranged as a magnetic memory. The magnetic junction undergoing ST-FMR has a different aspect ratio than the magnetic junctions.
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公开(公告)号：US10276226B2
公开(公告)日：2019-04-30
申请号：US16005595
申请日：2018-06-11
Applicant: Samsung Electronics Co., LTD.
Inventor： Sebastian Schafer , Dmytro Apalkov , Alexey Vasilyevitch Khvalkovskiy , Vladimir Nikitin , Robert Beach , Zheng Duan
Abstract: A method for measuring a temperature of magnetic junction switchable using spin transfer. The magnetic junction includes at least one magnetic layer. The method includes measuring a temperature variation of at least one magnetic characteristic for the magnetic layer(s) versus temperature. The method also includes measuring a bias variation in the magnetic characteristic versus an electrical bias for the magnetic junction. This measurement is performed such that spin transfer torque-induced variation(s) in the magnetic characteristic(s) are accounted for. The temperature versus the electrical bias for the magnetic junction is determined based on the temperature variation and the bias variation.
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