公开(公告)号：US09525074B2

公开(公告)日：2016-12-20

申请号：US14924317

申请日：2015-10-27

Applicant: Samsung Display Co., Ltd.

Inventor： Sung-Ho Kim ,  Jong-Moo Huh

IPC: H01L29/10 ,  H01L29/786 ,  H01L29/66 ,  H01L27/32

CPC classification number: H01L27/3248 ,  H01L27/1225 ,  H01L27/1255 ,  H01L27/3223 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3265 ,  H01L27/3276 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869 ,  H01L51/56 ,  H01L2227/323

Abstract: A display substrate includes a base substrate, a switching device on the base substrate and an alignment pattern. The switching device includes an active pattern, a gate insulation layer pattern partially covering the active pattern, a gate electrode on the gate insulation layer pattern, and a source electrode and a drain electrode electrically connected to the active pattern. The alignment pattern has a multi-layered structure and is spaced apart from the switching device on the base substrate. The alignment pattern includes materials which have different transmittances.

Abstract translation: 显示基板包括基底基板，基底基板上的切换装置和对准图案。 开关器件包括有源图案，部分地覆盖有源图案的栅极绝缘层图案，栅极绝缘层图案上的栅电极，以及与活性图案电连接的源电极和漏电极。 对准图案具有多层结构，并且与基底基板上的开关装置间隔开。 对准图案包括具有不同透射率的材料。

公开(公告)号：US09142780B2

公开(公告)日：2015-09-22

申请号：US14049119

申请日：2013-10-08

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Min-Chul Shin ,  Jong-Moo Huh ,  Bong-Ju Kim ,  Yun-Gyu Lee

IPC: H01L21/00 ,  H01L51/00 ,  H01L51/52 ,  H01L27/32 ,  H01L27/12

CPC classification number: H01L51/0023 ,  H01L27/1255 ,  H01L27/1288 ,  H01L27/3244 ,  H01L27/3262 ,  H01L51/5203 ,  H01L2227/323

Abstract: A display device includes a substrate, a first conductive film pattern including a gate electrode and a first capacitor electrode on the substrate, a gate insulating layer pattern on the first conductive film pattern, a polycrystalline silicon film pattern including an active layer and a second capacitor electrode on the gate insulating layer pattern, an interlayer insulating layer on the polycrystalline silicon film pattern, a plurality of first contact holes through the gate insulating layer pattern and the interlayer insulating layer to expose a portion of the first conductive film pattern, a plurality of second contact holes through the interlayer insulating layer to expose a portion of the polycrystalline silicon film pattern, and a second conductive film pattern including a source electrode, a drain electrode, and a pixel electrode on the interlayer insulating layer.

Abstract translation: 显示装置包括基板，在基板上包括栅电极和第一电容器电极的第一导电膜图案，第一导电膜图案上的栅极绝缘层图案，包括有源层和第二电容器的多晶硅膜图案 栅极绝缘层图案上的电极，多晶硅膜图案上的层间绝缘层，穿过栅极绝缘层图案的多个第一接触孔和层间绝缘层，以暴露第一导电膜图案的一部分，多个 第二接触孔穿过层间绝缘层以暴露多晶硅膜图案的一部分，以及在层间绝缘层上包括源电极，漏电极和像素电极的第二导电膜图案。

公开(公告)号：US20150171121A1

公开(公告)日：2015-06-18

申请号：US14631023

申请日：2015-02-25

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Sang-Ho Moon ,  Jong-Moo Huh ,  Sung-Ho Kim

IPC: H01L27/12 ,  H01L49/02 ,  H01L21/266 ,  H01L29/66 ,  H01L21/02 ,  H01L21/311

CPC classification number: H01L21/02532 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02592 ,  H01L21/02595 ,  H01L21/02667 ,  H01L21/02678 ,  H01L21/02686 ,  H01L21/266 ,  H01L21/31111 ,  H01L21/31144 ,  H01L27/1255 ,  H01L27/1274 ,  H01L27/1285 ,  H01L27/1288 ,  H01L27/3244 ,  H01L27/3265 ,  H01L28/60 ,  H01L29/66757 ,  H01L2227/323

Abstract: A method of manufacturing a polysilicon (poly-Si) layer, a method of manufacturing an organic light-emitting display apparatus using the method, and an organic light-emitting display apparatus manufactured by using the method. The method includes forming an amorphous silicon (a-Si) layer on a substrate having first and second areas, thermally treating the a-Si layer to partially crystallize the a-Si layer into a partially crystallized Si layer, removing a thermal oxide layer through a thermal treatment, selectively irradiating the first areas with laser beams to crystallize the partially crystallized Si layer.

Abstract translation: 多晶硅（poly-Si）层的制造方法，使用该方法的有机发光显示装置的制造方法以及使用该方法制造的有机发光显示装置。 该方法包括在具有第一和第二区域的衬底上形成非晶硅（a-Si）层，热处理a-Si层以将a-Si层部分地结晶成部分结晶的Si层，通过 热处理，用激光束选择性地照射第一区域以结晶部分结晶的Si层。

公开(公告)号：US09202828B2

公开(公告)日：2015-12-01

申请号：US14631023

申请日：2015-02-25

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Sang-Ho Moon ,  Jong-Moo Huh ,  Sung-Ho Kim

IPC: H01L29/00 ,  H01L21/00 ,  H01L27/12 ,  H01L21/02 ,  H01L27/32 ,  H01L21/266 ,  H01L21/311 ,  H01L49/02 ,  H01L29/66

CPC classification number: H01L21/02532 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02592 ,  H01L21/02595 ,  H01L21/02667 ,  H01L21/02678 ,  H01L21/02686 ,  H01L21/266 ,  H01L21/31111 ,  H01L21/31144 ,  H01L27/1255 ,  H01L27/1274 ,  H01L27/1285 ,  H01L27/1288 ,  H01L27/3244 ,  H01L27/3265 ,  H01L28/60 ,  H01L29/66757 ,  H01L2227/323

Abstract: A method of manufacturing a polysilicon (poly-Si) layer, a method of manufacturing an organic light-emitting display apparatus using the method, and an organic light-emitting display apparatus manufactured by using the method. The method includes forming an amorphous silicon (a-Si) layer on a substrate having first and second areas, thermally treating the a-Si layer to partially crystallize the a-Si layer into a partially crystallized Si layer, removing a thermal oxide layer through a thermal treatment, selectively irradiating the first areas with laser beams to crystallize the partially crystallized Si layer.

Abstract translation: 多晶硅（poly-Si）层的制造方法，使用该方法的有机发光显示装置的制造方法以及使用该方法制造的有机发光显示装置。 该方法包括在具有第一和第二区域的衬底上形成非晶硅（a-Si）层，热处理a-Si层以将a-Si层部分地结晶成部分结晶的Si层，通过 热处理，用激光束选择性地照射第一区域以结晶部分结晶的Si层。

公开(公告)号：US20140038333A1

公开(公告)日：2014-02-06

申请号：US14049119

申请日：2013-10-08

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Min-Chul Shin ,  Jong-Moo Huh ,  Bong-Ju Kim ,  Yun-Gyu Lee

IPC: H01L51/00

CPC classification number: H01L51/0023 ,  H01L27/1255 ,  H01L27/1288 ,  H01L27/3244 ,  H01L27/3262 ,  H01L51/5203 ,  H01L2227/323

Abstract: A display device includes a substrate, a first conductive film pattern including a gate electrode and a first capacitor electrode on the substrate, a gate insulating layer pattern on the first conductive film pattern, a polycrystalline silicon film pattern including an active layer and a second capacitor electrode on the gate insulating layer pattern, an interlayer insulating layer on the polycrystalline silicon film pattern, a plurality of first contact holes through the gate insulating layer pattern and the interlayer insulating layer to expose a portion of the first conductive film pattern, a plurality of second contact holes through the interlayer insulating layer to expose a portion of the polycrystalline silicon film pattern, and a second conductive film pattern including a source electrode, a drain electrode, and a pixel electrode on the interlayer insulating layer.

Abstract translation: 显示装置包括基板，在基板上包括栅电极和第一电容器电极的第一导电膜图案，第一导电膜图案上的栅极绝缘层图案，包括有源层和第二电容器的多晶硅膜图案 栅极绝缘层图案上的电极，多晶硅膜图案上的层间绝缘层，穿过栅极绝缘层图案的多个第一接触孔和层间绝缘层，以暴露第一导电膜图案的一部分，多个 第二接触孔穿过层间绝缘层以暴露多晶硅膜图案的一部分，以及在层间绝缘层上包括源电极，漏电极和像素电极的第二导电膜图案。

公开(公告)号：US10528162B2

公开(公告)日：2020-01-07

申请号：US14833575

申请日：2015-08-24

Applicant: Samsung Display Co., Ltd.

Inventor： Bo-Kyung Choi ,  Jong-Moo Huh ,  Sung-Ho Kim ,  Min-Chul Shin

IPC: G06F3/041 ,  H01L27/32 ,  G02F1/1333

Abstract: A display device integrated with a sensor includes a first substrate and a second substrate disposed while facing each other, and having exposed ends at different sides thereof, a sealing material configured to seal an overlapping region between the first and second substrates, a display unit including a plurality of pixels provided in a sealed region inside the sealing material, a sensor electrode unit formed on the second substrate, a first pad unit formed in an exposed part of the first substrate, and a second pad unit formed in an exposed part of the second substrate.

公开(公告)号：US09012916B2

公开(公告)日：2015-04-21

申请号：US13869284

申请日：2013-04-24

Applicant: Samsung Display Co., Ltd.

Inventor： Sang-Ho Moon ,  Jong-Moo Huh ,  Sung-Ho Kim

IPC: H01L29/04 ,  H01L51/00 ,  H01L27/32 ,  H01L21/02 ,  H01L27/12

CPC classification number: H01L21/02532 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02592 ,  H01L21/02595 ,  H01L21/02667 ,  H01L21/02678 ,  H01L21/02686 ,  H01L21/266 ,  H01L21/31111 ,  H01L21/31144 ,  H01L27/1255 ,  H01L27/1274 ,  H01L27/1285 ,  H01L27/1288 ,  H01L27/3244 ,  H01L27/3265 ,  H01L28/60 ,  H01L29/66757 ,  H01L2227/323

Abstract: A method of manufacturing a polysilicon (poly-Si) layer, a method of manufacturing an organic light-emitting display apparatus using the method, and an organic light-emitting display apparatus manufactured by using the method. The method includes forming an amorphous silicon (a-Si) layer on a substrate having first and second areas, thermally treating the a-Si layer to partially crystallize the a-Si layer into a partially crystallized Si layer, removing a thermal oxide layer through a thermal treatment, selectively irradiating the first areas with laser beams to crystallize the partially crystallized Si layer.

公开(公告)号：US20140158996A1

公开(公告)日：2014-06-12

申请号：US13869284

申请日：2013-04-24

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Sang-Ho Moon ,  Jong-Moo Huh ,  Sung-Ho Kim

IPC: H01L27/32 ,  H01L21/02

CPC classification number: H01L21/02532 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02592 ,  H01L21/02595 ,  H01L21/02667 ,  H01L21/02678 ,  H01L21/02686 ,  H01L21/266 ,  H01L21/31111 ,  H01L21/31144 ,  H01L27/1255 ,  H01L27/1274 ,  H01L27/1285 ,  H01L27/1288 ,  H01L27/3244 ,  H01L27/3265 ,  H01L28/60 ,  H01L29/66757 ,  H01L2227/323

Abstract: A method of manufacturing a polysilicon (poly-Si) layer, a method of manufacturing an organic light-emitting display apparatus using the method, and an organic light-emitting display apparatus manufactured by using the method. The method includes forming an amorphous silicon (a-Si) layer on a substrate having first and second areas, thermally treating the a-Si layer to partially crystallize the a-Si layer into a partially crystallized Si layer, removing a thermal oxide layer through a thermal treatment, selectively irradiating the first areas with laser beams to crystallize the partially crystallized Si layer.

Abstract translation: 多晶硅（poly-Si）层的制造方法，使用该方法的有机发光显示装置的制造方法以及使用该方法制造的有机发光显示装置。 该方法包括在具有第一和第二区域的衬底上形成非晶硅（a-Si）层，热处理a-Si层以将a-Si层部分地结晶成部分结晶的Si层，通过 热处理，用激光束选择性地照射第一区域以结晶部分结晶的Si层。

公开(公告)号：US09691832B2

公开(公告)日：2017-06-27

申请号：US14880059

申请日：2015-10-09

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Min-Chul Shin ,  Sung-Ho Kim ,  Jong-Moo Huh ,  Bo-Kyung Choi

IPC: H01L27/32 ,  H01L51/56 ,  H01L51/00

CPC classification number: H01L27/3258 ,  H01L27/3246 ,  H01L27/3272 ,  H01L51/0014 ,  H01L51/56 ,  H01L2227/323

Abstract: An organic light emitting display device, including a substrate, a first conductive layer pattern on the substrate, a first insulation layer pattern on the first conductive layer pattern, a first semiconductor layer pattern on the first insulation layer pattern, a gate insulation layer pattern on the gate insulation layer pattern, a gate electrode on the gate insulation layer pattern, a planarization layer on the gate electrode, the planarization layer including a first protruding portion protruded in a first direction perpendicular to an upper surface of the substrate, a lower electrode on the first protruding portion, a pixel defining layer exposing at least a portion of the lower electrode, the pixel defining layer covering opposite side portions of the first protruding portion, a light emitting layer on the lower electrode, and an upper electrode on the light emitting layer.

公开(公告)号：US09685326B2

公开(公告)日：2017-06-20

申请号：US14864402

申请日：2015-09-24

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Sang-Ho Moon ,  Jong-Moo Huh ,  Sung-Ho Kim

IPC: H01L21/00 ,  H01L21/02 ,  H01L27/32 ,  H01L27/12 ,  H01L21/266 ,  H01L21/311 ,  H01L49/02 ,  H01L29/66

CPC classification number: H01L21/02532 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02592 ,  H01L21/02595 ,  H01L21/02667 ,  H01L21/02678 ,  H01L21/02686 ,  H01L21/266 ,  H01L21/31111 ,  H01L21/31144 ,  H01L27/1255 ,  H01L27/1274 ,  H01L27/1285 ,  H01L27/1288 ,  H01L27/3244 ,  H01L27/3265 ,  H01L28/60 ,  H01L29/66757 ,  H01L2227/323

Abstract: A method of manufacturing a polysilicon (poly-Si) layer, a method of manufacturing an organic light-emitting display apparatus using the method, and an organic light-emitting display apparatus manufactured by using the method. The method includes forming an amorphous silicon (a-Si) layer on a substrate having first and second areas, thermally treating the a-Si layer to partially crystallize the a-Si layer into a partially crystallized Si layer, removing a thermal oxide layer through a thermal treatment, selectively irradiating the first areas with laser beams to crystallize the partially crystallized Si layer.