System-in-packages including a bridge die

    公开(公告)号:US11322446B2

    公开(公告)日:2022-05-03

    申请号:US16665970

    申请日:2019-10-28

    申请人: SK hynix Inc.

    摘要: A system-in-package includes a redistributed line (RDL) structure, a first semiconductor chip, a second semiconductor chip, and a bridge die. The RDL structure includes a first RDL pattern to which a first chip pad of the first semiconductor chip is electrically connected. The second semiconductor chip is stacked on the first semiconductor chip such that the second semiconductor chip protrudes past a side surface of the first semiconductor chip, wherein a second chip pad disposed on the protrusion is electrically connected to the first RDL pattern through the bridge die.

    Stack packages including bridge dies

    公开(公告)号:US10985106B2

    公开(公告)日:2021-04-20

    申请号:US16216778

    申请日:2018-12-11

    申请人: SK hynix Inc.

    摘要: A stack package includes a plurality of sub-packages vertically stacked. Each of the sub-packages includes a bridge die having a plurality of vertical interconnectors and a semiconductor die. A first group of vertical interconnectors disposed in a first bridge die included in a first sub-package of the sub-packages and other vertical interconnectors connected to the first group of vertical interconnectors constitute a first electric path, and a second group of vertical interconnectors disposed in a second bridge die included in a second sub-package of the sub-packages and other vertical interconnectors connected to the second group of vertical interconnectors constitute a second electric path. The first and second electric paths are electrically isolated from each other and disposed to provide two separate electric paths.

    Semiconductor packages including bridge die

    公开(公告)号:US10903196B2

    公开(公告)日:2021-01-26

    申请号:US16690816

    申请日:2019-11-21

    申请人: SK hynix Inc.

    摘要: A semiconductor package includes first and second semiconductor dies, first and second redistributed line structures, a first bridge die, and a vertical connector. The first semiconductor die and the first bridge die are disposed on the first redistributed line structure. The first bridge die is disposed to provide a level difference between the first semiconductor die and the first bridge die, the first bridge die having a height that is less than a height of the first semiconductor die. The second redistributed line structure has a protrusion, laterally protruding from a side surface of the first semiconductor die when viewed from a plan view, and a bottom surface of the second redistributed line structure is in contact with a top surface of the first semiconductor die. The second semiconductor die is disposed on the second redistributed line structure. The vertical connector is disposed between the bridge die and the protrusion of the second redistributed line structure to support the protrusion.