知搜-全球专利检索

  1. 登录
  2. 注册

搜索结果

7 条记录 (耗时 0.015 秒)

    PHASE-CHANGE MEMORY DEVICE HAVING PHASE-CHANGE REGION DIVIDED INTO MULTI LAYERS AND OPERATING METHOD THEREOF
    1.
    发明申请
    PHASE-CHANGE MEMORY DEVICE HAVING PHASE-CHANGE REGION DIVIDED INTO MULTI LAYERS AND OPERATING METHOD THEREOF 审中-公开
    具有相变区域的相变存储器件分为多层及其操作方法

    公开(公告)号：US20160072059A1

    公开(公告)日：2016-03-10

    申请号：US14941208

    申请日：2015-11-13

    申请人： SK hynix Inc.

    发明人： Jin Hyock KIM ,  Su Jin CHAE ,  Young Seok KWON ,  Hae Chan PARK

    IPC分类号： H01L45/00 ,  G11C13/00

    CPC分类号： H01L45/06 ,  G11C11/5678 ,  G11C13/0004 ,  G11C13/0069 ,  G11C13/0097 ,  G11C2013/0092 ,  H01L27/2463 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1683

    摘要： A phase-change memory device including a phase-change region divided into multi layers and an operation method thereof are provided. The device includes a first phase-change layer to which a current is provided from a heating electrode, and a second phase-change layer formed with continuity to the first phase-change layer and having a different width from the first phase-change layer, and to which a current is provided from the heating electrode. The first and second phase-change layers include materials selected from a first group consisting of GeTe, GST415, GST315, GST225, GST124, GST147, and GST172 or a second group consisting of InSbSe, SnGeSe, GST, SnSbSe, and SiSbSe. The second phase-change layer includes a material different from the first phase-change layer, which is selected from the same group as the first phase-change layer and has smaller resistivity than the first phase-change layer.

    摘要翻译： 提供一种包括分为多层的相变区域的相变存储器件及其操作方法。 该装置包括从加热电极提供电流的第一相变层和与第一相变层连续形成并且具有与第一相变层不同的宽度的第二相变层， 并且从加热电极提供电流。 第一和第二相变层包括从由GeTe，GST415，GST315，GST225，GST124，GST147和GST172组成的第一组中选择的材料或由InSbSe，SnGeSe，GST，SnSbSe和SiSbSe组成的第二组的材料。 第二相变层包括与第一相变层不同的材料，其选自与第一相变层相同的组，并且具有比第一相变层更小的电阻率。

    PHASE-CHANGE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
    3.
    发明申请
    PHASE-CHANGE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME 有权
    相变存储器件及其制造方法

    公开(公告)号：US20130280880A1

    公开(公告)日：2013-10-24

    申请号：US13920656

    申请日：2013-06-18

    申请人： SK hynix Inc.

    发明人： Keun LEE ,  Jin Hyock KIM ,  Young Seok KWON

    IPC分类号： H01L45/00

    CPC分类号： H01L45/1641 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1616 ,  H01L45/1683

    摘要： A phase-change memory device with improved deposition characteristic and a method of fabricating the same are provided. The phase-change memory device includes a semiconductor substrate having a phase-change area, a first material-rich first phase-change layer forming an inner surface of the phase-change area and comprised of a hetero compound of the first material and a second material, and a second phase-change layer formed on a surface of the first phase-change layer to fill the phase-change area.

    摘要翻译： 提供了具有改进的沉积特性的相变存储器件及其制造方法。 相变存储器件包括具有相变区域的半导体衬底，形成相变区域的内表面的第一富含材料的第一相变层，并且由第一材料的杂化合物和第二材料组成 材料和形成在第一相变层的表面上以填充相变区域的第二相变层。

    SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
    5.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 审中-公开

    公开(公告)号：US20150318330A1

    公开(公告)日：2015-11-05

    申请号：US14799156

    申请日：2015-07-14

    申请人： SK hynix Inc.

    发明人： Jin Hyock KIM ,  Keun LEE ,  Young Seok KWON

    IPC分类号： H01L27/24 ,  H01L29/47 ,  H01L29/872

    CPC分类号： H01L27/2409 ,  H01L29/47 ,  H01L29/872 ,  H01L45/06 ,  H01L45/145 ,  H01L45/1633

    摘要： A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes a semiconductor substrate in which a word line region is formed, and a barrier metal layer arranged on the word line region and causing a Schottky junction. The barrier metal layer includes a first nitride material, in which a first material is nitrified, and a second nitride material, in which a second material is nitrified. The barrier metal layer is formed of a mixture of the first nitride material and the second nitride material. At least one of the first material or the second material is rich in a metal used to form the first nitride material or the second nitride material.

    SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
    6.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 审中-公开
    半导体器件及其制造方法

    公开(公告)号：US20150318329A1

    公开(公告)日：2015-11-05

    申请号：US14799099

    申请日：2015-07-14

    申请人： SK hynix Inc.

    发明人： Jin Hyock KIM ,  Keun LEE ,  Young Seok KWON

    IPC分类号： H01L27/24 ,  H01L29/47 ,  H01L29/872

    CPC分类号： H01L27/2409 ,  H01L29/47 ,  H01L29/872 ,  H01L45/06 ,  H01L45/145 ,  H01L45/1633

    摘要： A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes a semiconductor substrate in which a word line region is formed, and a barrier metal layer arranged on the word line region and causing a Schottky junction. The barrier metal layer includes a first nitride material, in which a first material is nitrified, and a second nitride material, in which a second material is nitrified. The barrier metal layer is formed of a mixture of the first nitride material and the second nitride material. At least one of the first material or the second material is rich in a metal used to form the first nitride material or the second nitride material.

    摘要翻译： 提供半导体器件及其制造方法。 半导体器件包括其中形成字线区域的半导体衬底和布置在字线区域上并形成肖特基结的势垒金属层。 阻挡金属层包括其中第一材料被硝化的第一氮化物材料和第二材料被硝化的第二氮化物材料。 阻挡金属层由第一氮化物材料和第二氮化物材料的混合物形成。 第一材料或第二材料中的至少一种富含用于形成第一氮化物材料或第二氮化物材料的金属。

    SEMICONDUCTOR MEMORY DEVICE AND FABRICATION METHOD THEREOF
    7.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE AND FABRICATION METHOD THEREOF 有权
    半导体存储器件及其制造方法

    公开(公告)号：US20140054752A1

    公开(公告)日：2014-02-27

    申请号：US13711804

    申请日：2012-12-12

    申请人： SK HYNIX INC.

    发明人： Su Jin CHAE ,  Jin Hyock KIM ,  Young Seok KWON

    IPC分类号： H01L23/28 ,  H01L21/768

    CPC分类号： H01L45/1683 ,  H01L21/76892 ,  H01L21/76897 ,  H01L23/28 ,  H01L27/2409 ,  H01L43/12 ,  H01L45/06 ,  H01L45/1253 ,  H01L45/16 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor memory device and a fabrication method thereof capable of improving electric contact characteristic between an access device and a lower electrode are provided. The semiconductor memory device includes an access device formed in a pillar shape on a semiconductor substrate, a first conductive layer formed over the access device, a protection layer formed on an edge of the first conductive layer to a predetermined thickness, and a lower electrode connected to the first conductive layer.

    摘要翻译： 提供一种能够提高存取装置与下部电极之间的电接触特性的半导体存储装置及其制造方法。 半导体存储器件包括在半导体衬底上形成为柱状的访问器件，形成在存取器件上的第一导电层，形成在第一导电层的边缘上至预定厚度的保护层，以及连接到第一导电层的下部电极 到第一导电层。