发明申请
- 专利标题： PHASE CHANGE MEMORY DEVICE HAVING SELF-ALIGNED BOTTOM ELECTRODE AND FABRICATION METHOD THEREOF
- 专利标题（中）： 具有自对准底电极的相变存储器件及其制造方法
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申请号： US14268668申请日： 2014-05-02
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公开(公告)号： US20140242773A1公开(公告)日： 2014-08-28
- 发明人: Su Jin CHAE , Jin Hyock KIM , Young Seok KWON
- 申请人： SK hynix Inc.
- 申请人地址： KR Gyeonggi-do
- 专利权人： SK hynix Inc.
- 当前专利权人： SK hynix Inc.
- 当前专利权人地址： KR Gyeonggi-do
- 优先权： KR10-2012-0093196 20120824
- 主分类号： H01L45/00
- IPC分类号： H01L45/00 ; H01L43/12
摘要：
A semiconductor memory device and a fabrication method thereof capable of improving electric contact characteristic between an access device and a lower electrode are provided. The semiconductor memory device includes an access device formed in a pillar shape on a semiconductor substrate, a first conductive layer formed over the access device, a protection layer formed on an edge of the first conductive layer to a predetermined thickness, and a lower electrode connected to the first conductive layer.
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