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发明申请
US20140301137A1 PHASE-CHANGE MEMORY DEVICE HAVING PHASE-CHANGE REGION DIVIDED INTO MULTI LAYERS AND OPERATING METHOD THEREOF 审中-公开
具有相变区域的相变存储器件分为多层及其操作方法

  • 专利标题： PHASE-CHANGE MEMORY DEVICE HAVING PHASE-CHANGE REGION DIVIDED INTO MULTI LAYERS AND OPERATING METHOD THEREOF
  • 专利标题（中）： 具有相变区域的相变存储器件分为多层及其操作方法
  • 申请号： US14309430
    申请日： 2014-06-19
  • 公开(公告)号： US20140301137A1
    公开(公告)日： 2014-10-09
  • 发明人: Jin Hyock KIM , Su Jin CHAE , Young Seok KWON , Hae Chan PARK
  • 申请人： SK hynix Inc.
  • 优先权： KR10-2011-0107632 20111020
  • 主分类号： H01L45/00
  • IPC分类号： H01L45/00 ;  G11C13/00
PHASE-CHANGE MEMORY DEVICE HAVING PHASE-CHANGE REGION DIVIDED INTO MULTI LAYERS AND OPERATING METHOD THEREOF
摘要：
A phase-change memory device including a multi-level cell and an operation method thereof are provided. The device includes a first phase-change material layer to which a current is provided from a heating electrode, and a second phase-change material layer formed with continuity to the first phase-change material layer and having a different width from the first phase-change material layer, and to which a current is provided from the heating electrode. The second phase-change material layer includes a material having smaller resistivity and a lower crystallization rate than the first phase-change material layer.
摘要（中）：

提供一种包括多电平单元的相变存储器件及其操作方法。 该装置包括从加热电极提供电流的第一相变材料层和与第一相变材料层连续形成且与第一相变材料层的宽度不同的第二相变材料层， 改变材料层，并且从加热电极提供电流。 第二相变材料层包括具有比第一相变材料层更低的电阻率和更低的结晶速率的材料。

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