公开(公告)号：US20230361112A1

公开(公告)日：2023-11-09

申请号：US17936127

申请日：2022-09-28

申请人： Samsung Electronics Co.; Ltd.

发明人： BYOUNGHAK HONG ,  Gunho Jo ,  Sooyoung Park ,  Hyoeun Park ,  WookHyun Kwon ,  Jaehong Lee ,  Kang-Ill Seo

IPC分类号： H01L27/06 ,  H01L29/06 ,  H01L29/735 ,  H01L29/861

CPC分类号： H01L27/067 ,  H01L29/0673 ,  H01L29/735 ,  H01L29/8613

摘要： Integrated circuit devices including a bipolar junction transistor (BJT) and/or a P-N junction diode are provided. The integrated circuit devices may include a first stack including first and second semiconductor regions that are spaced apart from each other in a horizontal direction and have a first conductivity type and a plurality of nano-semiconductor layers that are stacked in a vertical direction and are between the first and second semiconductor regions. The plurality of nano-semiconductor layers each have a second conductivity type, and the first semiconductor region may include a side surface facing the plurality of nano-semiconductor layers. The integrated circuit device may also include a vertical semiconductor layer having the second conductivity type and a conductive contact that contacts the plurality of nano-semiconductor layers. The vertical semiconductor layer may contact the side surface of the first semiconductor region and the plurality of nano-semiconductor layers.

公开(公告)号：US20230154983A1

公开(公告)日：2023-05-18

申请号：US17576726

申请日：2022-01-14

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Kang-ill Seo ,  Sooyoung Park ,  Byounghak Hong

IPC分类号： H01L29/06 ,  H01L29/786 ,  H01L21/8234 ,  H01L29/66

CPC分类号： H01L29/0665 ,  H01L29/78618 ,  H01L29/78696 ,  H01L21/823418 ,  H01L29/66742 ,  H01L21/823412

摘要： A semiconductor device includes: a substrate; at least one hybrid channel structure formed on the substrate and including at least one 1st channel structure extended in 1st and 2nd directions in parallel with an upper surface of the substrate without directly contacting the substrate, and a 2nd channel structure connected to and intersecting the at least one 1st channel structure in a 3rd direction perpendicular to the 1st or 2nd direction; a gate structure surrounding the hybrid channel structure; and source/drain regions respectively formed at two opposite ends of the at least one hybrid channel structure in the 1st direction.

公开(公告)号：US20130285019A1

公开(公告)日：2013-10-31

申请号：US13833987

申请日：2013-03-15

申请人： SAMSUNG ELECTRONICS CO., LTD. ,  POSTECH ACADEMY-INDUSTRY FOUNDATION

发明人： Dongwon KIM ,  Dae Mann Kim ,  Yoon-Ha Jeong ,  Sooyoung Park ,  Chan-Hoon Park ,  Rock-Hyun Baek ,  Sang-Hyun Lee

IPC分类号： H01L29/775 ,  H01L29/78

CPC分类号： H01L29/775 ,  B82Y10/00 ,  B82Y40/00 ,  B82Y99/00 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/1033 ,  H01L29/78 ,  Y10S977/742

摘要： Provided is a field effect transistor including a drain region, a source region, and a channel region. The field effect transistor may further include a gate electrode on or surrounding at least a portion of the channel region, and a gate dielectric layer between the channel region and the gate electrode. A portion of the channel region adjacent the source region has a sectional area smaller than that of another portion of the channel region adjacent the drain region.

摘要翻译： 提供了包括漏极区域，源极区域和沟道区域的场效应晶体管。 场效应晶体管还可以包括在沟道区的至少一部分上或围绕沟道区的至少一部分的栅电极，以及沟道区和栅电极之间的栅介质层。 与源极区域相邻的沟道区域的一部分的截面积小于与漏极区域相邻的沟道区域的另一部分的截面面积。

公开(公告)号：US12087669B1

公开(公告)日：2024-09-10

申请号：US18543111

申请日：2023-12-18

申请人： Samsung Electronics Co., Ltd.

发明人： Jaehong Lee ,  Sooyoung Park ,  Wonhyuk Hong ,  Kang-Ill Seo

IPC分类号： H01L21/00 ,  H01L21/8238 ,  H01L23/48 ,  H01L27/07 ,  H01L27/092 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

CPC分类号： H01L23/481 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823842 ,  H01L21/823871 ,  H01L27/0727 ,  H01L27/092 ,  H01L29/0673 ,  H01L29/41733 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/775 ,  H01L29/78696

摘要： Integrated circuit devices and methods of forming the same. As an example, an integrated circuit device may include a substrate; a first transistor structure on the substrate; a second transistor structure stacked in a vertical direction on the first transistor structure; an isolation layer between the first transistor structure and the second transistor structure in the vertical direction; and a diode structure on the substrate and adjacent to the first transistor structure in a horizontal direction. The diode structure may be part of a discharging path between a gate electrode of the second transistor structure and the substrate. The discharging path may extend through the isolation layer.

公开(公告)号：US20240363633A1

公开(公告)日：2024-10-31

申请号：US18470684

申请日：2023-09-20

申请人： Samsung Electronics Co., Ltd.

发明人： MYUNG YANG ,  Seungchan YUN ,  Sooyoung Park ,  Jaehong Lee ,  KANG-ILL SEO

IPC分类号： H01L27/092 ,  H01L21/822 ,  H01L21/8238 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

CPC分类号： H01L27/0922 ,  H01L21/8221 ,  H01L21/823807 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/775 ,  H01L29/78696 ,  H03K17/687

摘要： Integrated circuit devices and methods of forming the same are provided. The integrated circuit devices may include a transistor on a substrate. The transistor may include: a pair of thin semiconductor layers spaced apart from each other; a channel region between the pair of thin semiconductor layers; a gate electrode on the pair of thin semiconductor layers and the channel region; and a gate insulator separating the gate electrode from both the pair of thin semiconductor layers and the channel region. A side surface of the channel region may be recessed with respect to side surfaces of the pair of thin semiconductor layers and may define a recess between the pair of thin semiconductor layers. A portion of the gate insulator and/or a portion of the gate electrode may be in the recess.

公开(公告)号：US20230420459A1

公开(公告)日：2023-12-28

申请号：US18056181

申请日：2022-11-16

申请人： Samsung Electronics Co., Ltd.

发明人： Byounghak Hong ,  Sooyoung Park ,  Jaehong Lee ,  Kang-ill Seo ,  WookHyun Kwon

IPC分类号： H01L27/092 ,  H01L27/06 ,  H01L21/768

CPC分类号： H01L27/0922 ,  H01L27/0688 ,  H01L21/768

摘要： Integrated circuit devices and methods of forming the same are provided. The integrated circuit devices may include a substrate and a transistor stack on the substrate. The transistor stack comprises a first transistor and a second transistor stacked in a first direction. The first transistor comprises first and second source/drain regions and a first channel region between the first and second source/drain regions, and the first source/drain region comprises a first metal layer. The second transistor comprises third and fourth source/drain regions and a second channel region between the third and fourth source/drain regions, and the first and third source/drain regions overlap each other in the first direction. The transistor stack further comprises a metal interconnector contacting the third source/drain region and the first metal layer of the first source/drain region material.

公开(公告)号：US20230163202A1

公开(公告)日：2023-05-25

申请号：US18094597

申请日：2023-01-09

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Jaehong LEE ,  Seungchan Yun ,  Sooyoung Park ,  Kang-ill Seo

IPC分类号： H01L29/73 ,  H01L29/786 ,  H01L23/48 ,  H01L29/06 ,  H01L29/66

CPC分类号： H01L29/7302 ,  H01L29/78696 ,  H01L23/481 ,  H01L29/0673 ,  H01L29/66265

摘要： Provided is field-effect transistor structure including: a substrate including therein at least one 1st doped region, a 2nd doped region on one side of the 1st doped region, and a 3rd doped region on another side of the 1st doped region; a 1st channel structure including therein a 4th doped region on the 2nd doped region in the substrate; and a 2nd channel structure, at a side of the 1st channel structure, including therein a 5th doped region on the 3rd doped region in the substrate, wherein the 4th, 2nd, 1st, 3rd and 5th doped regions form a sequentially connected passive device.

公开(公告)号：US20240204035A1

公开(公告)日：2024-06-20

申请号：US18379404

申请日：2023-10-12

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Sungyeol KIM ,  Kyehoon Lee ,  Pujjae Choi ,  Sooyoung Park ,  Chunsoon Park ,  Junsung Choi

IPC分类号： H01L27/15 ,  G02F1/1335 ,  G02F1/13357 ,  H01L25/065

CPC分类号： H01L27/15 ,  G02F1/133603 ,  G02F1/133607 ,  G02F1/133614 ,  G02F1/13362 ,  H01L25/0655 ,  H01L33/06

摘要： A display apparatus, includes: a liquid crystal panel; and a backlight configured to provide light to the liquid crystal panel, the backlight including a substrate and a light-emitting diode (LED) that is mounted on the substrate. The LED includes a plurality of light-emitting layers configured to emit light of different wavelengths. A wavelength of light emitted from each of the plurality of light-emitting layers is greater than or equal to 430 nm and less than or equal to 480 nm.