公开(公告)号：US20180004654A1

公开(公告)日：2018-01-04

申请号：US15704888

申请日：2017-09-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： MOOSUNG KIM ,  DAWOON JUNG

IPC: G06F12/02 ,  G11C16/26 ,  G11C11/56

CPC classification number: G06F12/0246 ,  G11C11/5642 ,  G11C16/26

Abstract: An operating method is for a memory device which controls a nonvolatile memory. The operating method includes managing a program depth bit map indicating an upper page program state of each of a plurality of word lines of the nonvolatile memory in response to an external write request, and outputting one of a plurality of different read commands to the nonvolatile memory based on information of the program depth bit map corresponding to a word line to be accessed in response to an external read request.

公开(公告)号：US20150348633A1

公开(公告)日：2015-12-03

申请号：US14747786

申请日：2015-06-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： YOUNGSUN SONG ,  BOGEUN KIM ,  OHSUK KWON ,  KITAE PARK ,  SEUNG-HWAN SHIN ,  SANGYONG YOON ,  MOOSUNG KIM ,  HYUNJUN YOON

IPC: G11C16/12 ,  G11C16/34

CPC classification number: G11C16/12 ,  G11C11/5621 ,  G11C11/5628 ,  G11C11/5642 ,  G11C16/10 ,  G11C16/3459

Abstract: A nonvolatile memory device includes a memory cell array, a page buffer unit which output a verify-read result, a reference current generating unit which generates a reference current signal, a page buffer decoding unit which outputs currents according to the verify-read result. The nonvolatile memory device further includes an analog bit counting unit which counts the currents, a digital adding unit which calculates an accumulated sum of the counting result, a pass/fail checking unit which outputs a pass signal or fail signal according to the calculation result, and a control unit controlling a program operation.

Abstract translation: 非易失性存储器件包括存储单元阵列，输出验证读取结果的页面缓冲器单元，产生参考电流信号的参考电流产生单元，根据验证读取结果输出电流的页面缓冲器解码单元。 非易失性存储装置还包括对电流进行计数的模拟比特计数单元，计算计数结果的累积和的数字加法单元，根据计算结果输出通过信号或失败信号的通过/失败检查单元， 以及控制程序操作的控制单元。

公开(公告)号：US20230154505A1

公开(公告)日：2023-05-18

申请号：US17988797

申请日：2022-11-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JIN-YOUNG CHUN ,  MINJAE SEO ,  MOOSUNG KIM

IPC: G11C7/12 ,  G11C7/10 ,  G11C7/20

CPC classification number: G11C7/12 ,  G11C7/1069 ,  G11C7/20 ,  G11C7/1039

Abstract: A non-volatile memory device includes: a memory cell; a bit line connected to the memory cell; a first cross coupled inverter for storing data sensed from the memory cell through a sensing node connected to the bit line; a first transistor and a second transistor respectively connected to respective ends of the first cross coupled inverter and respectively transmitting a ground voltage to respective ends of the first cross coupled inverter; and a control circuit for operating the first transistor and the second transistor at least once for at least one of an initialize period in which the sensing node is discharged and a precharge period in which the bit line is precharged.

公开(公告)号：US20140010017A1

公开(公告)日：2014-01-09

申请号：US13915688

申请日：2013-06-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JI-SANG LEE ,  MOOSUNG KIM

IPC: G11C16/26

CPC classification number: G11C16/26 ,  G11C11/5642 ,  G11C16/3454 ,  G11C16/3495 ,  G11C2211/5641

Abstract: A method of reading a nonvolatile memory device comprises applying a read voltage to a memory cell array to read selected memory cells, counting a number of the selected memory cells that have a threshold voltage higher or lower than the read voltage, and comparing the counted number with a reference value to determine a number of bits stored in the selected memory cells.

Abstract translation: 读取非易失性存储器件的方法包括将读取电压施加到存储器单元阵列以读取所选择的存储器单元，对具有高于或低于读取电压的阈值电压的所选存储单元的数量进行计数，以及将所计数的数目 具有用于确定存储在所选择的存储器单元中的位数的参考值。