公开(公告)号：US20250133787A1

公开(公告)日：2025-04-24

申请号：US19005034

申请日：2024-12-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ju Hun PARK ,  Won Cheol JEONG ,  Jin Wook KIM ,  Deok Han BAE ,  Myung Yoon UM ,  In Yeal LEE ,  Yoon Young JUNG

IPC: H10D62/10 ,  H10D64/01

Abstract: A semiconductor device includes an active pattern extending in a first direction on a substrate, a gate structure on the active pattern and having a gate electrode extending in a second direction intersecting the active pattern, and a gate capping pattern on the gate electrode, the gate capping pattern including a gate capping liner defining a gate capping recess, the gate capping liner having a horizontal portion along an upper surface of the gate electrode, and a vertical portion extending from the horizontal portion in a third direction intersecting the first and second directions, and a gate capping filling film on the gate capping liner and filling the gate capping recess, an epitaxial pattern on the active pattern and adjacent the gate structure, a gate contact on and connected to the gate electrode, and an active contact on and connected to the epitaxial pattern.

公开(公告)号：US20200083726A1

公开(公告)日：2020-03-12

申请号：US15746243

申请日：2017-09-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin Wook KIM ,  Jae Hyung KIM

IPC: H02J7/00 ,  H02J7/02 ,  H02J50/10 ,  H02J50/80 ,  H02J7/04

Abstract: Disclosed is a wireless charging device including a first cover, at least a portion of a surface of which has a frictional force of a specific magnitude, a second cover disposed under the first cover and having an elastic force of a specific magnitude, an upper housing disposed under the second cover, a lower housing coupled to the upper housing, at least one charging coil disposed between the upper housing and the lower housing and configured to supply electric power to an electronic device positioned on an upper surface of the first cover, a power source part connected to the at least one charging coil, and a holding state changing part configured to help change holding states of the upper housing and the lower housing.

公开(公告)号：US20200058748A1

公开(公告)日：2020-02-20

申请号：US16364551

申请日：2019-03-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Deok Han BAE ,  Jin Wook KIM

IPC: H01L29/423 ,  H01L29/49 ,  H01L27/088 ,  H01L21/8234 ,  H01L29/66 ,  H01L29/51

Abstract: A semiconductor device includes a substrate having an active region, a gate structure on the active region, the gate structure including a gate dielectric layer and a gate electrode layer, and the gate electrode layer having a rounded upper corner, and gate spacer layers on side surfaces of the gate structure, the gate spacer layers having an upper surface at a lower height level than an upper surface of the gate electrode layer.

公开(公告)号：US20170347259A1

公开(公告)日：2017-11-30

申请号：US15609489

申请日：2017-05-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joon Sup KWAK ,  Chunping GONG ,  Hyun Do LEE ,  Jin Koo KANG ,  Jin Uk KANG ,  Dong Kyu KIM ,  Jin Wook KIM ,  Hyun Jung BAEK ,  Ji Ho SHIN ,  Sung Taek LEE

IPC: H04W8/18 ,  H04W64/00 ,  H04M15/00 ,  H04W12/06 ,  H04W4/24 ,  H04W88/06

CPC classification number: H04W8/183 ,  H04M15/8038 ,  H04M17/02 ,  H04W4/24 ,  H04W4/50 ,  H04W4/60 ,  H04W8/205 ,  H04W12/06 ,  H04W64/00 ,  H04W88/06

Abstract: An electronic device is provided. The electronic device includes a processor configured to execute a roaming application, a communication circuit configured to enable a first subscriber identity module (SIM) and to communicate with a network based on the first SIM, and a memory configured to store data associated with the roaming application. The processor is further configured to, when a roaming service product is selected in the roaming application, download a second SIM corresponding to the roaming service product from a server and enable an activation menu of the roaming service product included in the roaming application, based on location information of the electronic device.

公开(公告)号：US20180172332A1

公开(公告)日：2018-06-21

申请号：US15849011

申请日：2017-12-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin Wook KIM ,  Jae Hyung KIM ,  Gi Ha WOO

IPC: F25D17/06 ,  F25D23/06

CPC classification number: F25D17/065 ,  F25D11/02 ,  F25D13/04 ,  F25D23/062 ,  F25D23/068 ,  F25D2317/061 ,  F25D2323/023 ,  F25D2400/28

Abstract: A refrigerator is provided. The refrigerator includes a freezing compartment, a refrigerating compartment, a quick-chilling chamber, and a compressor that supplies cold air to at least one of the freezing compartment, the refrigerating compartment, or the quick-chilling chamber. The quick-chilling chamber is cooled by first cold air introduced through the compressor or second cold air introduced through the freezing compartment.

公开(公告)号：US20170092728A1

公开(公告)日：2017-03-30

申请号：US15272456

申请日：2016-09-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ki Hwan KIM ,  Jung Gun YOU ,  Gi Gwan PARK ,  Dong Suk SHIN ,  Jin Wook KIM

IPC: H01L29/417 ,  H01L29/78 ,  H01L29/45 ,  H01L27/088

CPC classification number: H01L29/41791 ,  H01L21/823418 ,  H01L21/823431 ,  H01L21/823821 ,  H01L27/0886 ,  H01L27/0924 ,  H01L29/0673 ,  H01L29/456 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785

Abstract: A semiconductor device includes a substrate having first and second regions, a first fin-type pattern and a second fin-type pattern formed in the first region and extending in a first direction, and a third fin-type pattern and a fourth fin-type pattern formed in the second region and extending in a third direction. A first source/drain is formed on the first fin-type pattern and a second source/drain region is formed on the second fin-type pattern. Each of first and second source/drains have a cross section defining a same convex polygonal shape. A third source/drain is formed on the third fin-type pattern and a fourth source/drain region is formed on the fourth fin-type pattern. Cross-sections of the third and fourth source/drains define different convex polygonal shapes from one another.

公开(公告)号：US20220254881A1

公开(公告)日：2022-08-11

申请号：US17516900

申请日：2021-11-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ju Hun PARK ,  Won Cheol JEONG ,  Jin Wook KIM ,  Deok Han BAE ,  Myung Yoon UM ,  In Yeal LEE ,  Yoon Young JUNG

IPC: H01L29/06 ,  H01L29/66

Abstract: A semiconductor device includes an active pattern extending in a first direction on a substrate, a gate structure on the active pattern and having a gate electrode extending in a second direction intersecting the active pattern, and a gate capping pattern on the gate electrode, the gate capping pattern including a gate capping liner defining a gate capping recess, the gate capping liner having a horizontal portion along an upper surface of the gate electrode, and a vertical portion extending from the horizontal portion in a third direction intersecting the first and second directions, and a gate capping filling film on the gate capping liner and filling the gate capping recess, an epitaxial pattern on the active pattern and adjacent the gate structure, a gate contact on and connected to the gate electrode, and an active contact on and connected to the epitaxial pattern.

公开(公告)号：US20200006341A1

公开(公告)日：2020-01-02

申请号：US16244324

申请日：2019-01-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Se Ki HONG ,  Ju Youn KIM ,  Jin Wook KIM

IPC: H01L27/092 ,  H01L29/66 ,  H01L29/78 ,  H01L29/49 ,  H01L29/423 ,  H01L21/8238

Abstract: A semiconductor device includes a substrate having first and second regions, a first gate electrode layer on the first region, and including a first conductive layer, and a second gate electrode layer on the second region, and including the first conductive layer, a second conductive layer on the first conductive layer, and a barrier metal layer on the second conductive layer, wherein an upper surface of the first gate electrode layer is at a lower level than an upper surface of the second gate electrode layer.