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    SEMICONDUCTOR DEVICE
    1.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20250133787A1

    公开(公告)日：2025-04-24

    申请号：US19005034

    申请日：2024-12-30

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Ju Hun PARK ,  Won Cheol JEONG ,  Jin Wook KIM ,  Deok Han BAE ,  Myung Yoon UM ,  In Yeal LEE ,  Yoon Young JUNG

    IPC: H10D62/10 ,  H10D64/01

    Abstract: A semiconductor device includes an active pattern extending in a first direction on a substrate, a gate structure on the active pattern and having a gate electrode extending in a second direction intersecting the active pattern, and a gate capping pattern on the gate electrode, the gate capping pattern including a gate capping liner defining a gate capping recess, the gate capping liner having a horizontal portion along an upper surface of the gate electrode, and a vertical portion extending from the horizontal portion in a third direction intersecting the first and second directions, and a gate capping filling film on the gate capping liner and filling the gate capping recess, an epitaxial pattern on the active pattern and adjacent the gate structure, a gate contact on and connected to the gate electrode, and an active contact on and connected to the epitaxial pattern.

    SEMICONDUCTOR DEVICE
    3.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220254881A1

    公开(公告)日：2022-08-11

    申请号：US17516900

    申请日：2021-11-02

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Ju Hun PARK ,  Won Cheol JEONG ,  Jin Wook KIM ,  Deok Han BAE ,  Myung Yoon UM ,  In Yeal LEE ,  Yoon Young JUNG

    IPC: H01L29/06 ,  H01L29/66

    Abstract: A semiconductor device includes an active pattern extending in a first direction on a substrate, a gate structure on the active pattern and having a gate electrode extending in a second direction intersecting the active pattern, and a gate capping pattern on the gate electrode, the gate capping pattern including a gate capping liner defining a gate capping recess, the gate capping liner having a horizontal portion along an upper surface of the gate electrode, and a vertical portion extending from the horizontal portion in a third direction intersecting the first and second directions, and a gate capping filling film on the gate capping liner and filling the gate capping recess, an epitaxial pattern on the active pattern and adjacent the gate structure, a gate contact on and connected to the gate electrode, and an active contact on and connected to the epitaxial pattern.

    SEMICONDUCTOR DEVICE
    4.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220336664A1

    公开(公告)日：2022-10-20

    申请号：US17558967

    申请日：2021-12-22

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Deok Han BAE ,  Ju Hun PARK ,  Myung Yoon UM ,  Yu Ri LEE ,  In Yeal LEE

    IPC: H01L29/78 ,  H01L29/08

    Abstract: A semiconductor device is capable of improving the performance and reliability of a device. The semiconductor device includes a first fin-shaped pattern which extends lengthwise in a first direction, a second fin-shaped pattern which is spaced apart from the first fin-shaped pattern in a second direction and extends lengthwise in the first direction, a first gate electrode extending lengthwise in the second direction on the first fin-shaped pattern, a second gate electrode extending lengthwise in the second direction on the second fin-shaped pattern, a first gate separation structure which separates the first gate electrode and the second gate electrode and is at the same vertical level as the first gate electrode and the second gate electrode, and a first source/drain contact extending lengthwise in the second direction on the first fin-shaped pattern and the second fin-shaped pattern. The first source/drain contact includes a first lower source/drain contact region which intersects the first fin-shaped pattern and the second fin-shaped pattern, and a first upper source/drain contact region which protrudes from the first lower source/drain contact region, and the first upper source/drain contact region does not overlap the first gate separation structure in the first direction.

    SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
    5.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 有权

    公开(公告)号：US20220077292A1

    公开(公告)日：2022-03-10

    申请号：US17227848

    申请日：2021-04-12

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Deok Han BAE ,  Sung Min KIM ,  Ju Hun PARK ,  Myung Yoon UM ,  Jong Mil YOUN

    IPC: H01L29/417 ,  H01L29/423 ,  H01L29/66 ,  H01L29/06 ,  H01L29/40

    Abstract: A semiconductor device is provided. The semiconductor device includes a substrate comprising an element isolation region and an active region defined by the element isolation region, a fin-type pattern on the active region, the fin-type pattern extending in a first horizontal direction, a gate electrode on the fin-type pattern, the gate electrode extending in a second horizontal direction that crosses the first horizontal direction, a capping pattern on the gate electrode, a source/drain region on at least one side of the gate electrode, a source/drain contact on the source/drain region and electrically connected to the source/drain region, and a filling insulating layer on the source/drain contact, the filling insulating layer having a top surface at a same level as a top surface of the capping pattern, and including a material containing a carbon (C) atom.

    SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME
    6.
    发明申请
    SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME 有权

    公开(公告)号：US20250063799A1

    公开(公告)日：2025-02-20

    申请号：US18619655

    申请日：2024-03-28

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Ju Hun PARK ,  Jong Hyun PARK ,  Jong Lae LEE ,  Jong Sun LEE ,  Da Un JEON ,  Hyo Won JEONG ,  Gyu Eon CHO ,  Hyo Taek CHOI ,  Soo Yeon HONG

    IPC: H01L29/417 ,  H01L23/522 ,  H01L23/528 ,  H01L27/088 ,  H01L29/78

    Abstract: A semiconductor device includes: an active pattern extending in a first direction across an underlying substrate, a gate structure extending in a second direction, on the active pattern, a first source/drain contact electrically connected to a source/drain region within the active pattern, on one side of the gate structure, and a first via pattern electrically connected to an upper surface of the first source/drain contact. A rail pattern is provided, which extends in the first direction, and is spaced apart from the first via pattern in the second direction. A wiring pattern extends in the first direction, and is electrically connected to an upper surface of the rail pattern. The first source/drain contact includes a first recess therein, which is more recessed downwardly relative to the upper surface of the first source/drain contact, and at least a portion of the first recess extends adjacent to the rail pattern.

    SEMICONDUCTOR DEVICE
    8.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220320301A1

    公开(公告)日：2022-10-06

    申请号：US17539772

    申请日：2021-12-01

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Deok Han BAE ,  Ju Hun PARK ,  Myung Yoon UM

    IPC: H01L29/417 ,  H01L27/092 ,  H01L29/06 ,  H01L29/423

    Abstract: A semiconductor device including a field insulating layer, a part of which protrudes upwardly in a vertical direction on an element isolation region between a first active region and a second active region may be provided. Accordingly, a depth of a source/drain contact to be provided may be reduced, thereby reducing difficulty for providing the source/drain contact may be reduced.

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