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    SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
    1.
    发明申请
    SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME 有权

    公开(公告)号：US20230135639A1

    公开(公告)日：2023-05-04

    申请号：US17888647

    申请日：2022-08-16

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Keun LEE ,  Kihyun YOON ,  Jeonggil LEE ,  Hauk HAN

    IPC: H01L27/11556 ,  H01L29/423

    Abstract: An electrode structure includes a conductive electrode, the conductive electrode including a first surface, an insulating layer on the conductive electrode, the insulating layer being in contact with the first surface of the conductive electrode, and a nano dot pattern in the conductive electrode and spaced apart from the first surface of the conductive electrode, the nano dot pattern including nano dots arranged in parallel to the first surface of the conductive electrode, and each of the nano dots including a first side surface adjacent to the first surface of the conductive electrode, the first side surface being flat and parallel to the first surface of the conductive electrode, and a second side surface opposite to the first side surface, the second side surface being convex in a direction away from the first surface of the conductive electrode.

    SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME
    2.
    发明申请
    SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME 审中-公开
    半导体器件及其制造方法

    公开(公告)号：US20140001625A1

    公开(公告)日：2014-01-02

    申请号：US13933398

    申请日：2013-07-02

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： HAUK HAN ,  Ho-Ki LEE ,  HyunSeok LIM ,  Kihyun YUN ,  MYOUNGBUM LEE ,  Jeonggil LEE ,  Tai-Soo LIM

    IPC: H01L23/49

    CPC classification number: H01L23/49 ,  H01L21/76805 ,  H01L21/76816 ,  H01L21/76883 ,  H01L21/76885 ,  H01L23/5226 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/53295 ,  H01L27/11524 ,  H01L2924/0002 ,  H01L2924/0001 ,  H01L2924/00

    Abstract: A semiconductor device may include a contact mold layer on a substrate, the contact mold layer defining first and second contact portions on the substrate, a wire mold layer on the contact mold layer, and first and second wires penetrating the wire mold layer and extending in a first direction, the first and second wires contacting the respective first and second contact portions and the contact mold layer. The first and second wires may be arranged in an alternating manner, and the first and second contact portions may be arranged to have a zigzag configuration. Each of the first and second contact portions may include a conductive pattern and a barrier pattern, and the barrier pattern may have a top surface lower than a top surface of the contact mold layer.

    Abstract translation: 半导体器件可以包括在基板上的接触模制层，接触模具层限定基板上的第一和第二接触部分，接触模具层上的线模层，以及穿过线模层的第一和第二导线 第一方向，第一和第二线接触相应的第一和第二接触部分和接触模具层。 第一和第二导线可以以交替的方式布置，并且第一和第二接触部分可以被布置成具有锯齿形构造。 第一和第二接触部分中的每一个可以包括导电图案和阻挡图案，并且阻挡图案可以具有比接触模制层的顶表面低的顶表面。

    SEMICONDUCTOR DEVICES
    3.
    发明申请
    SEMICONDUCTOR DEVICES 有权

    公开(公告)号：US20220037351A1

    公开(公告)日：2022-02-03

    申请号：US17206277

    申请日：2021-03-19

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jeonggil LEE ,  Taisoo LIM ,  Hauk HAN

    IPC: H01L27/11575 ,  H01L21/768 ,  H01L23/535 ,  H01L27/11548 ,  H01L27/11556 ,  H01L27/11529 ,  H01L27/11582 ,  H01L27/11573

    Abstract: A semiconductor device includes circuit elements on a first substrate; gate electrodes on a second substrate and stacked to be apart from each other in a first direction; sacrificial insulating layers on a lower through-insulating layer penetrating the second substrate, stacked to be spaced apart from each other in the first direction, and having side surfaces opposing the gate electrodes; channel structures penetrating the gate electrodes, extending vertically on the second substrate, and including a channel layer; a first separation pattern penetrating the gate electrodes and including a first barrier pattern and a first pattern portion extending from the first barrier pattern in a second direction; and a second separation pattern penetrating the gate electrodes, disposed to be parallel to the first separation pattern, and extending in the second direction. Some of the side surfaces of the sacrificial insulating layers may overlap the first barrier pattern in a third direction.

    SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
    5.
    发明公开
    SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 审中-公开

    公开(公告)号：US20230343706A1

    公开(公告)日：2023-10-26

    申请号：US18158692

    申请日：2023-01-24

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Hauk HAN ,  Seonghun PARK ,  Jeonggil LEE

    IPC: H01L23/528 ,  H01L23/532

    CPC classification number: H01L23/5283 ,  H01L23/53266

    Abstract: A semiconductor device includes an insulating structure, a first conductive structure in the insulating structure, the first conductive structure including a first conductive layer and a second conductive layer, and a second conductive structure in the insulating structure, the second conductive structure including a first conductive layer of the second conductive structure. A width of the first conductive structure is larger than a width of the second conductive structure. The first conductive layer of the first conductive structure, the second conductive layer of the first conductive structure, and the first conductive layer of the second conductive structure include a same nonmetal element. A concentration of the nonmetal element in the second conductive layer of the first conductive structure is higher than a concentration of the nonmetal element in the first conductive layer of the first conductive structure and first conductive layer of the second conductive structure.

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