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    Integrated circuit device and method of manufacturing the same
    3.
    发明授权
    Integrated circuit device and method of manufacturing the same 有权

    公开(公告)号：US11069613B2

    公开(公告)日：2021-07-20

    申请号：US16742233

    申请日：2020-01-14

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Woojin Lee ,  Junghoo Shin ,  Sanghoon Ahn ,  Junhyuk Lim ,  Daehan Kim

    IPC: H01L23/522 ,  H01L21/768 ,  H01L23/528 ,  H01L23/485

    Abstract: An integrated circuit device includes a first insulation layer on a substrate, a lower wiring structure in the first insulation layer and including a metal layer and a conductive barrier layer, such that the metal layer is on the conductive barrier layer, an etch stop layer overlapping an upper surface of the first insulation layer and an upper surface of the conductive barrier layer and having a first thickness, a capping layer overlapping a portion of the upper surface of the metal layer and having a second thickness which is less than the first thickness, a second insulation layer overlapping the etch stop layer and the capping layer, and an upper wiring structure connected to another portion of the upper surface of the metal layer not overlapped by the capping layer in the second insulation layer.

    Non-volatile memory device
    6.
    发明授权
    Non-volatile memory device 有权

    公开(公告)号：US12217791B2

    公开(公告)日：2025-02-04

    申请号：US17952826

    申请日：2022-09-26

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Gyuha Park ,  Daehan Kim

    IPC: G11C11/4093 ,  G11C11/4074 ,  G11C11/408

    Abstract: A non-volatile memory device includes: one or more memory blocks including a plurality of memory cells connected to a plurality of word lines, and a plurality of memory cell strings; a page buffer unit; one or more pass units including a plurality of pass transistors that may supply operation voltages to the plurality of word lines; one or more monitoring units including one or more monitoring pass transistors connected to the plurality of pass transistors; a voltage generator that may supply activation voltages to a first pass transistor, in which a leakage current is to be measured, and to the one or more monitoring pass transistors; and a control logic that may control the voltage generator to generate the activation voltages by using a voltage control signal and detect the leakage current based on monitoring voltages output from the one or more monitoring pass transistors.

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