公开(公告)号：US11069613B2

公开(公告)日：2021-07-20

申请号：US16742233

申请日：2020-01-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Woojin Lee ,  Junghoo Shin ,  Sanghoon Ahn ,  Junhyuk Lim ,  Daehan Kim

IPC: H01L23/522 ,  H01L21/768 ,  H01L23/528 ,  H01L23/485

Abstract: An integrated circuit device includes a first insulation layer on a substrate, a lower wiring structure in the first insulation layer and including a metal layer and a conductive barrier layer, such that the metal layer is on the conductive barrier layer, an etch stop layer overlapping an upper surface of the first insulation layer and an upper surface of the conductive barrier layer and having a first thickness, a capping layer overlapping a portion of the upper surface of the metal layer and having a second thickness which is less than the first thickness, a second insulation layer overlapping the etch stop layer and the capping layer, and an upper wiring structure connected to another portion of the upper surface of the metal layer not overlapped by the capping layer in the second insulation layer.

公开(公告)号：US12125785B2

公开(公告)日：2024-10-22

申请号：US17530206

申请日：2021-11-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junghoo Shin ,  Jongmin Baek ,  Sanghoon Ahn ,  Woojin Lee ,  Junhyuk Lim

IPC: H01L23/528 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532

CPC classification number: H01L23/5283 ,  H01L21/76885 ,  H01L21/76897 ,  H01L23/5226 ,  H01L23/53295 ,  H01L21/76831 ,  H01L21/76843 ,  H01L23/53214 ,  H01L23/53238 ,  H01L23/53257

Abstract: A semiconductor integrated circuit device includes a substrate; a transistor on the substrate; an interlayer insulating film on the transistor; an insulating liner on the interlayer insulating film; a first insulating film on the insulating liner; and a first wiring layer on the interlayer insulating film and surrounded by the insulating liner. A height of a top surface of the first insulating film in a vertical direction from a main surface of the interlayer insulating film is different than a height of a top surface of the first wiring layer in the vertical direction. A step exists between the top surfaces of the first wiring layer and the first insulating film. A height of the first insulating film is greater than a height of the first wiring layer. A width of the first wiring layer gradually narrows as the first wiring layer extends upwards along the vertical direction.

公开(公告)号：US20250014998A1

公开(公告)日：2025-01-09

申请号：US18897275

申请日：2024-09-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junghoo SHIN ,  Jongmin Baek ,  Sanghoon Ahn ,  Woojin Lee ,  Junhyuk Lim

IPC: H01L23/528 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532

Abstract: A semiconductor integrated circuit device includes a substrate; a transistor on the substrate; an interlayer insulating film on the transistor; an insulating liner on the interlayer insulating film; a first insulating film on the insulating liner; and a first wiring layer on the interlayer insulating film and surrounded by the insulating liner. A height of a top surface of the first insulating film in a vertical direction from a main surface of the interlayer insulating film is different than a height of a top surface of the first wiring layer in the vertical direction. A step exists between the top surfaces of the first wiring layer and the first insulating film. A height of the first insulating film is greater than a height of the first wiring layer. A width of the first wiring layer gradually narrows as the first wiring layer extends upwards along the vertical direction.