知搜-全球专利检索

  1. 登录
  2. 注册

搜索结果

28 条记录 (耗时 0.021 秒)

    Integrated circuit device and method of manufacturing the same
    1.
    发明授权
    Integrated circuit device and method of manufacturing the same 有权

    公开(公告)号：US11069613B2

    公开(公告)日：2021-07-20

    申请号：US16742233

    申请日：2020-01-14

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Woojin Lee ,  Junghoo Shin ,  Sanghoon Ahn ,  Junhyuk Lim ,  Daehan Kim

    IPC分类号： H01L23/522 ,  H01L21/768 ,  H01L23/528 ,  H01L23/485

    摘要： An integrated circuit device includes a first insulation layer on a substrate, a lower wiring structure in the first insulation layer and including a metal layer and a conductive barrier layer, such that the metal layer is on the conductive barrier layer, an etch stop layer overlapping an upper surface of the first insulation layer and an upper surface of the conductive barrier layer and having a first thickness, a capping layer overlapping a portion of the upper surface of the metal layer and having a second thickness which is less than the first thickness, a second insulation layer overlapping the etch stop layer and the capping layer, and an upper wiring structure connected to another portion of the upper surface of the metal layer not overlapped by the capping layer in the second insulation layer.

    Semiconductor device and method of manufacturing the same
    3.
    发明授权
    Semiconductor device and method of manufacturing the same 有权

    公开(公告)号：US10943824B2

    公开(公告)日：2021-03-09

    申请号：US16411439

    申请日：2019-05-14

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Woojin Lee ,  Hoon Seok Seo ,  Sanghoon Ahn ,  Kyu-Hee Han

    IPC分类号： H01L23/528 ,  H01L21/768

    摘要： A semiconductor device includes a substrate including an active pattern, a first interlayer dielectric layer on the substrate, the first interlayer dielectric layer including a recess on an upper portion thereof, and a lower connection line in the first interlayer dielectric layer, the lower connection line being electrically connected to the active pattern, and the lower connection line including a conductive pattern, the recess of the first interlayer dielectric layer selectively exposing a top surface of the conductive pattern, and a barrier pattern between the conductive pattern and the first interlayer dielectric layer, the first interlayer dielectric layer covering a top surface of the barrier pattern.

    Integrated circuit device including air gaps and method of manufacturing the same
    7.
    发明授权
    Integrated circuit device including air gaps and method of manufacturing the same 有权

    公开(公告)号：US11515201B2

    公开(公告)日：2022-11-29

    申请号：US16872955

    申请日：2020-05-12

    申请人： Samsung Electronics Co., Ltd.

    发明人： Sanghoon Ahn ,  Woojin Lee ,  Kyuhee Han

    IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L27/108

    摘要： An integrated circuit device according to the inventive concepts includes lower wiring structures formed on a substrate, an air gap arranged between the lower wiring structures, a capping layer covering an upper surface of the air gap, an etch stop layer conformally covering an upper surfaces of the lower wiring structures and the capping layer and having a protrusion and recess structure, an insulating layer covering the etch stop layer, and an upper wiring structure penetrating the insulating layer and connected to the upper surface of the lower wiring structure not covered with the etch stop layer, wherein the upper wiring structure covers a portion of an upper surface of the capping layer, and a level of the upper surface of the capping layer is higher than a level of the upper surface of the lower wiring structures.