Abstract:
An optical device includes: an optical device body; a first transparent electrode film deposited on a light incident side; a second transparent electrode film so formed that the first and second transparent electrode films face away from each other; and a first ferroelectric film deposited at least between the first and second transparent electrode films, wherein the first ferroelectric film vibrates in response to a drive voltage applied through the first and second transparent electrode films.
Abstract:
An optical device includes: an optical device body; a first transparent electrode film deposited on a light incident side; a second transparent electrode film so formed that the first and second transparent electrode films face away from each other; and a first ferroelectric film deposited at least between the first and second transparent electrode films, wherein the first ferroelectric film vibrates in response to a drive voltage applied through the first and second transparent electrode films.
Abstract:
A thin film transistor is provided. The thin film transistor includes an oxide semiconductor layer including a source region, a drain region, and a channel region wherein a portion of the source and drain regions has an oxygen concentration less than the channel region. Further provided is a thin film transistor that includes an oxide semiconductor layer including a source region, a drain region, and a channel region, wherein a portion of the source and drain regions includes a dopant selected from the group consisting of aluminum, boron, gallium, indium, titanium, silicon, germanium, tin, lead, and combinations thereof.
Abstract:
In an optical-reading document board, an anti-reflection layer is formed by a transparent film and an anti-reflection film is bonded on a document-resting surface of a transparent glass plate. The anti-reflection layer is structured by a transparent film and an anti-reflection film bonded on one surface of the transparent film. The use of such an anti-reflection film greatly improves reflectivity to provide an averaged reflectivity of approximately 3% in the entirety. As a result, the transmissivity of light is 94% or greater. In connection with this, the conventional layer has a reflectivity of approximately 8%, and a transmissivity thereof is around 90%. This makes it possible to effectively utilize more of the light from the light source and thus greatly improve contrast.
Abstract:
There are provided a display and an electronic unit capable of enhancing visibility. The display includes: a plurality of pixels each including a light-emission device, and having a light-transmission region in at least a part thereof; and one or more transmittance control devices capable of controlling a transmittance of incident light.
Abstract:
A display device includes a substrate; a display element; a thin film transistor, and having a first semiconductor oxide film including a source region and a drain region, the first semiconductor oxide film having first low resistance areas each of whose oxygen concentration is lower than that of the channel region in parts of the source region and the drain region in a depth direction from upper surfaces thereof; a second semiconductor oxide film having a second low resistance area whose oxygen concentration is lower than that of the channel region in a part in the depth direction from the upper surface; and a high resistance film covering the thin film transistor, the second semiconductor oxide film, and the substrate, made of a metallic oxide, having a first translucent area in an area contacting the first low resistance area, and having a second translucent area.
Abstract:
There are provided a display and an electronic unit capable of enhancing visibility. The display includes: a plurality of pixels each including a light-emission device, and having a light-transmission region in at least a part thereof; and one or more transmittance control devices capable of controlling a transmittance of incident light.
Abstract:
A display device includes a substrate; a display element; a thin film transistor, and having a first semiconductor oxide film including a source region and a drain region, the first semiconductor oxide film having first low resistance areas each of whose oxygen concentration is lower than that of the channel region in parts of the source region and the drain region in a depth direction from upper surfaces thereof; a second semiconductor oxide film having a second low resistance area whose oxygen concentration is lower than that of the channel region in a part in the depth direction from the upper surface; and a high resistance film covering the thin film transistor, the second semiconductor oxide film, and the substrate, made of a metallic oxide, having a first translucent area in an area contacting the first low resistance area, and having a second translucent area.
Abstract:
Disclosed herein is a method of manufacturing a thin film transistor having a structure that a gate electrode and an oxide semiconductor layer are disposed with a gate insulating film interposed between the gate electrode and the oxide semiconductor layer, and a source/drain electrode is electrically connected to the oxide semiconductor layer, the method including: continuously depositing an aluminum oxide (Al2O3) layer as a protective film and an aluminum (Al) layer in this order on any of the source/drain electrode, the gate insulating film, and the oxide semiconductor layer by using sputtering.
Abstract translation:这里公开了一种制造薄膜晶体管的方法,该薄膜晶体管的结构是栅极电极和氧化物半导体层被设置在栅电极和氧化物半导体层之间的栅绝缘膜上,并且源/漏电极电连接 涉及氧化物半导体层的方法,该方法包括:在源极/漏极,栅极绝缘膜和氧化物中的任何一个上依次沉积作为保护膜的氧化铝(Al 2 O 3)层和铝(Al)层 半导体层。
Abstract:
A color converting member is capable of suppressing deterioration in a phosphor by a simple manufacturing process. A method of manufacturing a color converting member includes a process of molding a resin material into a shape. In the process, molding the resin material and the phosphor integrally into a shape is performed, after kneading a phosphor that converts one color light to another color light into the resin material.