Optical device and optical apparatus
    1.
    发明授权
    Optical device and optical apparatus 有权
    光学装置和光学装置

    公开(公告)号:US08390175B2

    公开(公告)日:2013-03-05

    申请号:US12929406

    申请日:2011-01-21

    CPC classification number: G02B27/0006 G03B17/02 H04N5/2254

    Abstract: An optical device includes: an optical device body; a first transparent electrode film deposited on a light incident side; a second transparent electrode film so formed that the first and second transparent electrode films face away from each other; and a first ferroelectric film deposited at least between the first and second transparent electrode films, wherein the first ferroelectric film vibrates in response to a drive voltage applied through the first and second transparent electrode films.

    Abstract translation: 光学装置包括:光学装置主体; 沉积在光入射侧的第一透明电极膜; 这样形成的第二透明电极膜使得第一和第二透明电极膜彼此背离; 以及至少沉积在第一和第二透明电极膜之间的第一铁电体膜,其中第一铁电膜响应于通过第一和第二透明电极膜施加的驱动电压而振动。

    Optical device and optical apparatus
    2.
    发明申请
    Optical device and optical apparatus 有权
    光学装置和光学装置

    公开(公告)号:US20110205630A1

    公开(公告)日:2011-08-25

    申请号:US12929406

    申请日:2011-01-21

    CPC classification number: G02B27/0006 G03B17/02 H04N5/2254

    Abstract: An optical device includes: an optical device body; a first transparent electrode film deposited on a light incident side; a second transparent electrode film so formed that the first and second transparent electrode films face away from each other; and a first ferroelectric film deposited at least between the first and second transparent electrode films, wherein the first ferroelectric film vibrates in response to a drive voltage applied through the first and second transparent electrode films.

    Abstract translation: 光学装置包括:光学装置主体; 沉积在光入射侧的第一透明电极膜; 这样形成的第二透明电极膜使得第一和第二透明电极膜彼此背离; 以及至少沉积在第一和第二透明电极膜之间的第一铁电体膜,其中第一铁电膜响应于通过第一和第二透明电极膜施加的驱动电压而振动。

    Optical reading document board and optical reader
    4.
    发明授权
    Optical reading document board and optical reader 失效
    光学阅读文档板和光学阅读器

    公开(公告)号:US07286270B2

    公开(公告)日:2007-10-23

    申请号:US10313155

    申请日:2002-12-06

    CPC classification number: H04N1/1061 H04N1/1013 H04N1/193

    Abstract: In an optical-reading document board, an anti-reflection layer is formed by a transparent film and an anti-reflection film is bonded on a document-resting surface of a transparent glass plate. The anti-reflection layer is structured by a transparent film and an anti-reflection film bonded on one surface of the transparent film. The use of such an anti-reflection film greatly improves reflectivity to provide an averaged reflectivity of approximately 3% in the entirety. As a result, the transmissivity of light is 94% or greater. In connection with this, the conventional layer has a reflectivity of approximately 8%, and a transmissivity thereof is around 90%. This makes it possible to effectively utilize more of the light from the light source and thus greatly improve contrast.

    Abstract translation: 在光学读取文件基板中,通过透明膜形成防反射层,并且在透明玻璃板的文稿搁置表面上粘合防反射膜。 防反射层由透明膜和粘合在透明膜的一个表面上的防反射膜构成。 使用这种抗反射膜大大提高了反射率,从而提供了大约3%的平均反射率。 结果,光的透过率为94%以上。 与此相关,常规层的反射率约为8%,透射率约为90%。 这使得可以有效地利用来自光源的更多的光,从而大大提高对比度。

    Display device and electronic apparatus including the same
    6.
    发明授权
    Display device and electronic apparatus including the same 有权
    显示装置和包括其的电子设备

    公开(公告)号:US08643801B2

    公开(公告)日:2014-02-04

    申请号:US13400828

    申请日:2012-02-21

    Inventor: Yoshihiro Oshima

    Abstract: A display device includes a substrate; a display element; a thin film transistor, and having a first semiconductor oxide film including a source region and a drain region, the first semiconductor oxide film having first low resistance areas each of whose oxygen concentration is lower than that of the channel region in parts of the source region and the drain region in a depth direction from upper surfaces thereof; a second semiconductor oxide film having a second low resistance area whose oxygen concentration is lower than that of the channel region in a part in the depth direction from the upper surface; and a high resistance film covering the thin film transistor, the second semiconductor oxide film, and the substrate, made of a metallic oxide, having a first translucent area in an area contacting the first low resistance area, and having a second translucent area.

    Abstract translation: 显示装置包括基板; 显示元件 薄膜晶体管,并且具有包括源极区域和漏极区域的第一半导体氧化物膜,所述第一半导体氧化膜具有在所述源极区域的部分中的氧浓度低于沟道区域的第一低电阻区域 和漏极区域的深度方向; 第二半导体氧化膜,其具有比上表面在深度方向上的部分中的氧浓度低于沟道区的第二低电阻面积; 以及覆盖薄膜晶体管,第二半导体氧化物膜和由金属氧化物制成的基板的高电阻膜,在与第一低电阻区域接触的区域中具有第一半透明区域,并且具有第二半透明区域。

    DISPLAY DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME
    8.
    发明申请
    DISPLAY DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME 有权
    显示装置和电子装置,包括它们

    公开(公告)号:US20120218495A1

    公开(公告)日:2012-08-30

    申请号:US13400828

    申请日:2012-02-21

    Inventor: Yoshihiro Oshima

    Abstract: A display device includes a substrate; a display element; a thin film transistor, and having a first semiconductor oxide film including a source region and a drain region, the first semiconductor oxide film having first low resistance areas each of whose oxygen concentration is lower than that of the channel region in parts of the source region and the drain region in a depth direction from upper surfaces thereof; a second semiconductor oxide film having a second low resistance area whose oxygen concentration is lower than that of the channel region in a part in the depth direction from the upper surface; and a high resistance film covering the thin film transistor, the second semiconductor oxide film, and the substrate, made of a metallic oxide, having a first translucent area in an area contacting the first low resistance area, and having a second translucent area.

    Abstract translation: 显示装置包括基板; 显示元件 薄膜晶体管,并且具有包括源极区域和漏极区域的第一半导体氧化物膜,所述第一半导体氧化膜具有在所述源极区域的部分中的氧浓度低于沟道区域的第一低电阻区域 和漏极区域的深度方向; 第二半导体氧化膜,其具有比上表面在深度方向上的部分中的氧浓度低于沟道区的第二低电阻面积; 以及覆盖薄膜晶体管,第二半导体氧化物膜和由金属氧化物制成的基板的高电阻膜,在与第一低电阻区域接触的区域中具有第一半透明区域,并且具有第二半透明区域。

    THIN FILM TRANSISTOR AND A METHOD OF MANUFACTURING THE SAME
    9.
    发明申请
    THIN FILM TRANSISTOR AND A METHOD OF MANUFACTURING THE SAME 有权
    薄膜晶体管及其制造方法

    公开(公告)号:US20120112182A1

    公开(公告)日:2012-05-10

    申请号:US13280628

    申请日:2011-10-25

    Abstract: Disclosed herein is a method of manufacturing a thin film transistor having a structure that a gate electrode and an oxide semiconductor layer are disposed with a gate insulating film interposed between the gate electrode and the oxide semiconductor layer, and a source/drain electrode is electrically connected to the oxide semiconductor layer, the method including: continuously depositing an aluminum oxide (Al2O3) layer as a protective film and an aluminum (Al) layer in this order on any of the source/drain electrode, the gate insulating film, and the oxide semiconductor layer by using sputtering.

    Abstract translation: 这里公开了一种制造薄膜晶体管的方法,该薄膜晶体管的结构是栅极电极和氧化物半导体层被设置在栅电极和氧化物半导体层之间的栅绝缘膜上,并且源/漏电极电连接 涉及氧化物半导体层的方法,该方法包括:在源极/漏极,栅极绝缘膜和氧化物中的任何一个上依次沉积作为保护膜的氧化铝(Al 2 O 3)层和铝(Al)层 半导体层。

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