公开(公告)号：US09859437B2

公开(公告)日：2018-01-02

申请号：US13053997

申请日：2011-03-22

Applicant: Narihiro Morosawa ,  Yoshihiro Oshima

Inventor： Narihiro Morosawa ,  Yoshihiro Oshima

IPC: H01L29/786 ,  H01L29/417 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/78618

Abstract: A thin film transistor is provided. The thin film transistor includes an oxide semiconductor layer including a source region, a drain region, and a channel region wherein a portion of the source and drain regions has an oxygen concentration less than the channel region. Further provided is a thin film transistor that includes an oxide semiconductor layer including a source region, a drain region, and a channel region, wherein a portion of the source and drain regions includes a dopant selected from the group consisting of aluminum, boron, gallium, indium, titanium, silicon, germanium, tin, lead, and combinations thereof.

公开(公告)号：US20110240998A1

公开(公告)日：2011-10-06

申请号：US13053997

申请日：2011-03-22

Applicant: Narihiro Morosawa ,  Yoshihiro Oshima

Inventor： Narihiro Morosawa ,  Yoshihiro Oshima

IPC: H01L29/786

CPC classification number: H01L29/7869 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/78618

Abstract: A thin film transistor is provided. The thin film transistor includes an oxide semiconductor layer including a source region, a drain region, and a channel region wherein a portion of the source and drain regions has an oxygen concentration less than the channel region. Further provided is a thin film transistor that includes an oxide semiconductor layer including a source region, a drain region, and a channel region, wherein a portion of the source and drain regions includes a dopant selected from the group consisting of aluminum, boron, gallium, indium, titanium, silicon, germanium, tin, lead, and combinations thereof.

Abstract translation: 提供薄膜晶体管。 薄膜晶体管包括氧化物半导体层，其包括源区域，漏极区域和沟道区域，其中源极区域和漏极区域的一部分的氧浓度小于沟道区域。 还提供了一种薄膜晶体管，其包括包括源极区，漏极区和沟道区的氧化物半导体层，其中源极和漏极区的一部分包括选自由铝，硼，镓 铟，钛，硅，锗，锡，铅及其组合。

公开(公告)号：US09412763B2

公开(公告)日：2016-08-09

申请号：US13417989

申请日：2012-03-12

Applicant: Narihiro Morosawa

Inventor： Narihiro Morosawa

IPC: G02F1/1362 ,  H01L29/786 ,  H01L27/12 ,  G02F1/1368 ,  H01L27/32

CPC classification number: H01L27/1255 ,  G02F1/13306 ,  G02F1/1339 ,  G02F1/134309 ,  G02F1/13439 ,  G02F1/136213 ,  G02F1/1368 ,  G02F2001/133357 ,  H01L27/1225 ,  H01L27/3262 ,  H01L27/3265 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78696 ,  H01L2227/323

Abstract: A display device includes a substrate, a display element, a transistor as a drive element of the display element, and a holding capacitance element holding electric charge corresponding to a video signal, and including a first conductive film, a first semiconductor layer including an oxide semiconductor, an insulating film, and a second conductive film in order of closeness to the substrate. The display element, the transistor, and the holding capacitance element are provided on the substrate.

Abstract translation: 显示装置包括基板，显示元件，作为显示元件的驱动元件的晶体管和保持与视频信号对应的电荷的保持电容元件，并且包括第一导电膜，包括氧化物的第一半导体层 半导体，绝缘膜和第二导电膜。 显示元件，晶体管和保持电容元件设置在基板上。

公开(公告)号：US08497504B2

公开(公告)日：2013-07-30

申请号：US13287689

申请日：2011-11-02

Applicant: Toshiaki Arai ,  Narihiro Morosawa ,  Kazuhiko Tokunaga ,  Hiroshi Sagawa ,  Kiwamu Miura

Inventor： Toshiaki Arai ,  Narihiro Morosawa ,  Kazuhiko Tokunaga ,  Hiroshi Sagawa ,  Kiwamu Miura

IPC: H01L29/10

CPC classification number: H01L27/3262 ,  H01L27/1225 ,  H01L29/41733 ,  H01L29/458 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869 ,  H01L2251/5315

Abstract: A thin film transistor with which oxygen is easily supplied to an oxide semiconductor layer and favorable transistor characteristics are able to be restored and a display unit including the same. The thin film transistor includes, sequentially over a substrate, a gate electrode, a gate insulting film, an oxide semiconductor layer including a channel region, and a channel protective layer covering the channel region A source electrode and a drain electrode are formed on the oxide semiconductor layer located on both sides of the channel protective layer, and at least one of the source electrode and the drain electrode has an aperture to expose the oxide semiconductor layer.

Abstract translation: 能够使能够容易地供给氧化物半导体层的氧和良好的晶体管特性的薄膜晶体管能够恢复，并且包括该薄膜晶体管的显示单元。 薄膜晶体管在基板上顺序地包括栅电极，栅极绝缘膜，包括沟道区的氧化物半导体层，以及覆盖沟道区A的沟道保护层。源极和漏电极形成在氧化物 位于沟道保护层两侧的半导体层，源电极和漏电极中的至少一个具有露出氧化物半导体层的孔。

公开(公告)号：US08309956B2

公开(公告)日：2012-11-13

申请号：US12629283

申请日：2009-12-02

Applicant: Toshiaki Arai ,  Narihiro Morosawa ,  Kazuhiko Tokunaga

Inventor： Toshiaki Arai ,  Narihiro Morosawa ,  Kazuhiko Tokunaga

IPC: H01L29/10 ,  H01L29/12 ,  H01L29/08 ,  H01L35/24 ,  H01L51/00 ,  H01L31/102

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L27/3262

Abstract: A thin film transistor includes: a gate electrode; a gate insulting film formed on the gate electrode; an oxide semiconductor thin film layer forming a channel region corresponding to the gate electrode on the gate insulating film; a channel protective layer that is formed at least in a region corresponding to the channel region on the gate insulating film and the oxide semiconductor thin film layer, and that includes a first channel protective layer on a lower layer side and a second channel protective layer on an upper layer side; and a source/drain electrode that is formed on the channel protective layer and is electrically connected to the oxide semiconductor thin film layer. The first channel protective layer is made of an oxide insulating material, and one or both of the first channel protective layer and the second channel protective layer is made of a low oxygen permeable material.

Abstract translation: 薄膜晶体管包括：栅电极; 形成在栅电极上的栅极绝缘膜; 形成与栅极绝缘膜上的栅电极对应的沟道区域的氧化物半导体薄膜层; 至少形成在与栅极绝缘膜和氧化物半导体薄膜层上的沟道区域对应的区域中的沟道保护层，其包括下层侧的第一沟道保护层和第二沟道保护层 上层侧 以及源极/漏极，其形成在沟道保护层上并与氧化物半导体薄膜层电连接。 第一沟道保护层由氧化物绝缘材料制成，第一沟道保护层和第二沟道保护层中的一个或两个由低透氧材料制成。

公开(公告)号：US20100133525A1

公开(公告)日：2010-06-03

申请号：US12629283

申请日：2009-12-02

Applicant: Toshiaki Arai ,  Narihiro Morosawa ,  Kazuhiko Tokunaga

Inventor： Toshiaki Arai ,  Narihiro Morosawa ,  Kazuhiko Tokunaga

IPC: H01L29/786 ,  H01L51/52 ,  H01L21/34

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L27/3262

Abstract: A thin film transistor includes: a gate electrode; a gate insulting film formed on the gate electrode; an oxide semiconductor thin film layer forming a channel region corresponding to the gate electrode on the gate insulating film; a channel protective layer that is formed at least in a region corresponding to the channel region on the gate insulating film and the oxide semiconductor thin film layer, and that includes a first channel protective layer on a lower layer side and a second channel protective layer on an upper layer side; and a source/drain electrode that is formed on the channel protective layer and is electrically connected to the oxide semiconductor thin film layer. The first channel protective layer is made of an oxide insulating material, and one or both of the first channel protective layer and the second channel protective layer is made of a low oxygen permeable material.

Abstract translation: 薄膜晶体管包括：栅电极; 形成在栅电极上的栅极绝缘膜; 形成与栅极绝缘膜上的栅电极对应的沟道区域的氧化物半导体薄膜层; 至少形成在与栅极绝缘膜和氧化物半导体薄膜层上的沟道区域对应的区域中的沟道保护层，其包括下层侧的第一沟道保护层和第二沟道保护层 上层侧 以及源极/漏极，其形成在沟道保护层上并与氧化物半导体薄膜层电连接。 第一沟道保护层由氧化物绝缘材料制成，第一沟道保护层和第二沟道保护层中的一个或两个由低透氧材料制成。

公开(公告)号：US06700170B1

公开(公告)日：2004-03-02

申请号：US09471173

申请日：1999-12-23

Applicant: Narihiro Morosawa ,  Hiroshi Iwata

Inventor： Narihiro Morosawa ,  Hiroshi Iwata

IPC: H01L29772

CPC classification number: H01L21/28202 ,  H01L21/28176 ,  H01L21/823842 ,  H01L21/823857 ,  H01L29/518

Abstract: An insulated gate transistor in which nitride oxide film having a nitrogen concentration of 1×1020 (/cm3) or more and containing a halogen element is used as a gate insulator. Because the gate insulator has a nitrogen concentration of 1×1020 (/cm3) or more, boron contained in the gate electrode of the p-type transistor is never diffused into the channel. Further because a halogen element is contained in the gate insulator, transistor conductance is increased and reliability in hot carrier injection is improved. Thus, an insulated gate transistor which has a sufficiently large conductance and which is superior in reliability can be fabricated.

Abstract translation: 绝缘栅晶体管，其中氮浓度为1×10 20（/ cm 3）以上并含有卤素元素的氮氧化物膜用作栅极绝缘体。 因为栅极绝缘体的氮浓度为1×10 20（/ cm 3）以上，所以p型晶体管的栅电极中所含的硼不会扩散到沟道中。 此外，由于卤素元素包含在栅极绝缘体中，晶体管导通性增加，并且热载流子注入中的可靠性提高。 因此，可以制造具有足够大电导且可靠性优异的绝缘栅晶体管。

公开(公告)号：US6018182A

公开(公告)日：2000-01-25

申请号：US859100

申请日：1997-05-20

Applicant: Narihiro Morosawa

Inventor： Narihiro Morosawa

IPC: H01L21/316 ,  H01L21/28 ,  H01L21/336 ,  H01L29/49 ,  H01L29/786 ,  H01L27/01 ,  H01L27/12 ,  H01L31/0392

CPC classification number: H01L29/66765 ,  H01L21/28158 ,  H01L29/4908

Abstract: An insulating gate field effect semiconductor device having a gate insulating film of high resistance to moisture adsorption, wherein trap densities in the gate insulator film and at the interface between a channel semiconductor film and the gate insulator film are lowered, and causing no degradation of device characteristics and no lowering of reliability are caused. A SiO.sub.2 film including fluorine atoms is used as the gate insulator film to compensate defects in the gate insulator film and at the interface between the channel semiconductor film and the gate insulator film.

Abstract translation: 一种绝缘栅场效应半导体器件，其具有高耐潮湿吸附的栅极绝缘膜，其中栅绝缘膜中的阱密度和沟道半导体膜与栅极绝缘膜之间的界面处的陷阱密度降低，并且不会导致器件劣化 引起特性并且不降低可靠性。 使用包含氟原子的SiO 2膜作为栅极绝缘膜来补偿栅极绝缘膜中的缺陷和沟道半导体膜与栅极绝缘膜之间的界面。

公开(公告)号：US08618545B2

公开(公告)日：2013-12-31

申请号：US13400845

申请日：2012-02-21

Applicant: Dharam Pal Gosain ,  Tsutomu Tanaka ,  Narihiro Morosawa

Inventor： Dharam Pal Gosain ,  Tsutomu Tanaka ,  Narihiro Morosawa

IPC: H01L29/04 ,  H01L29/10 ,  H01L31/00

CPC classification number: H01L29/7869 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78651

Abstract: A thin film transistor capable of reliably preventing the entry of light into an active layer, and a display including the thin film transistor are provided. A thin film transistor includes: a gate electrode; an active layer; and a gate insulating film arranged between the gate electrode and the active layer, the gate insulating film including a first insulating film, a first light-absorbing layer and a second insulating film, the first insulating film arranged in contact with the gate electrode, the first light-absorbing layer arranged in contact with the first insulating film and made of a material absorbing light of 420 nm or less, the second insulating film arranged between the first light-absorbing layer and the active layer.

Abstract translation: 提供能够可靠地防止光进入有源层的薄膜晶体管，以及包括薄膜晶体管的显示器。 薄膜晶体管包括：栅电极; 活性层 以及栅极绝缘膜，其配置在所述栅电极和所述有源层之间，所述栅极绝缘膜包括第一绝缘膜，第一光吸收层和第二绝缘膜，所述第一绝缘膜与所述栅极电极接触， 所述第一光吸收层与所述第一绝缘膜接触并由吸收420nm以下的光的材料制成，所述第二绝缘膜布置在所述第一光吸收层和所述有源层之间。

公开(公告)号：US08426851B2

公开(公告)日：2013-04-23

申请号：US12654658

申请日：2009-12-29

Applicant: Narihiro Morosawa ,  Takashige Fujimori

Inventor： Narihiro Morosawa ,  Takashige Fujimori

IPC: H01L29/10 ,  H01L21/00

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/78606

Abstract: Provided is a thin film transistor capable of improving reliability in the thin film transistor including an oxide semiconductor layer. A thin film transistor including: a gate electrode; a gate insulating film formed on the gate electrode; an oxide semiconductor layer forming a channel region corresponding to the gate electrode on the gate insulating film; a channel protective film formed at least in a region corresponding to the channel region on the oxide semiconductor layer; and a source/drain electrode. A top face and a side face of the oxide semiconductor layer are covered with the source/drain electrode and the channel protective layer on the gate insulating film.