Insulating gate field effect semiconductor device and method of manufacturing the same

Invention Grant

US6018182A Insulating gate field effect semiconductor device and method of manufacturing the same 失效

Title translation: 绝缘栅场效应半导体器件及其制造方法

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Patent Title: Insulating gate field effect semiconductor device and method of manufacturing the same
Patent Title (中): 绝缘栅场效应半导体器件及其制造方法
Application No.: US859100

Application Date: 1997-05-20
Publication No.: US6018182A

Publication Date: 2000-01-25
Inventor: Narihiro Morosawa
Applicant: Narihiro Morosawa
Applicant Address: JPX Osaka
Assignee: Sharp Kabushiki Kaisha
Current Assignee: Sharp Kabushiki Kaisha
Current Assignee Address: JPX Osaka
Priority: JPX8-124480 19960520
Main IPC: H01L21/316
IPC: H01L21/316 ; H01L21/28 ; H01L21/336 ; H01L29/49 ; H01L29/786 ; H01L27/01 ; H01L27/12 ; H01L31/0392

Insulating gate field effect semiconductor device and method of
manufacturing the same

Abstract:

An insulating gate field effect semiconductor device having a gate insulating film of high resistance to moisture adsorption, wherein trap densities in the gate insulator film and at the interface between a channel semiconductor film and the gate insulator film are lowered, and causing no degradation of device characteristics and no lowering of reliability are caused. A SiO.sub.2 film including fluorine atoms is used as the gate insulator film to compensate defects in the gate insulator film and at the interface between the channel semiconductor film and the gate insulator film.

Abstract(Chinese):

一种绝缘栅场效应半导体器件，其具有高耐潮湿吸附的栅极绝缘膜，其中栅绝缘膜中的阱密度和沟道半导体膜与栅极绝缘膜之间的界面处的陷阱密度降低，并且不会导致器件劣化引起特性并且不降低可靠性。使用包含氟原子的SiO 2膜作为栅极绝缘膜来补偿栅极绝缘膜中的缺陷和沟道半导体膜与栅极绝缘膜之间的界面。

Public/Granted literature

US5310492A Refrigerating machine oil composition Public/Granted day:1994-05-10

Information query

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/314	......无机层（H01L21/3105，H01L21/32优先）
H01L21/316	.......由氧化物或玻璃状氧化物或以氧化物为基础的玻璃组成的无机层