Invention Grant
- Patent Title: Thin-film transistor, method of manufacturing the same, and display device
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Application No.: US13053997Application Date: 2011-03-22
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Publication No.: US09859437B2Publication Date: 2018-01-02
- Inventor: Narihiro Morosawa , Yoshihiro Oshima
- Applicant: Narihiro Morosawa , Yoshihiro Oshima
- Applicant Address: JP Tokyo
- Assignee: Joled Inc.
- Current Assignee: Joled Inc.
- Current Assignee Address: JP Tokyo
- Agency: K&L Gates LLP
- Priority: JP2010-079293 20100330; JP2010-245035 20101101
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L29/417 ; H01L29/66
Abstract:
A thin film transistor is provided. The thin film transistor includes an oxide semiconductor layer including a source region, a drain region, and a channel region wherein a portion of the source and drain regions has an oxygen concentration less than the channel region. Further provided is a thin film transistor that includes an oxide semiconductor layer including a source region, a drain region, and a channel region, wherein a portion of the source and drain regions includes a dopant selected from the group consisting of aluminum, boron, gallium, indium, titanium, silicon, germanium, tin, lead, and combinations thereof.
Public/Granted literature
- US20110240998A1 THIN-FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, AND DISPLAY DEVICE Public/Granted day:2011-10-06
Information query
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