Abstract:
Disclosed herein is a method of manufacturing a thin film transistor having a structure that a gate electrode and an oxide semiconductor layer are disposed with a gate insulating film interposed between the gate electrode and the oxide semiconductor layer, and a source/drain electrode is electrically connected to the oxide semiconductor layer, the method including: continuously depositing an aluminum oxide (Al2O3) layer as a protective film and an aluminum (Al) layer in this order on any of the source/drain electrode, the gate insulating film, and the oxide semiconductor layer by using sputtering.
Abstract translation:这里公开了一种制造薄膜晶体管的方法,该薄膜晶体管的结构是栅极电极和氧化物半导体层被设置在栅电极和氧化物半导体层之间的栅绝缘膜上,并且源/漏电极电连接 涉及氧化物半导体层的方法,该方法包括:在源极/漏极,栅极绝缘膜和氧化物中的任何一个上依次沉积作为保护膜的氧化铝(Al 2 O 3)层和铝(Al)层 半导体层。
Abstract:
Disclosed herein is a method of manufacturing a thin film transistor having a structure that a gate electrode and an oxide semiconductor layer are disposed with a gate insulating film interposed between the gate electrode and the oxide semiconductor layer, and a source/drain electrode is electrically connected to the oxide semiconductor layer, the method including: continuously depositing an aluminum oxide (Al2O3) layer as a protective film and an aluminum (Al) layer in this order on any of the source/drain electrode, the gate insulating film, and the oxide semiconductor layer by using sputtering.
Abstract translation:这里公开了一种制造薄膜晶体管的方法,该薄膜晶体管的结构是栅极电极和氧化物半导体层被设置在栅电极和氧化物半导体层之间的栅绝缘膜上,并且源/漏电极电连接 涉及氧化物半导体层的方法,该方法包括:在源极/漏极,栅极绝缘膜和氧化物中的任何一个上依次沉积作为保护膜的氧化铝(Al 2 O 3)层和铝(Al)层 半导体层。
Abstract:
Disclosed herein is a manufacturing method of a display device including: forming a gate electrode on a substrate; forming a laminated film by photolithography techniques. The laminated film is provided above the gate electrode with a gate insulating film sandwiched therebetween and includes a semiconductor layer, at least either a source/drain electrode or a pixel electrode, a planarizing film and a pixel isolation film. The manufacturing method further includes forming a functional layer and a common electrode in this order after the formation of the laminated film. The functional layer includes an organic electric field light-emitting layer. Two or more layers are patterned all together in at least part of the laminated film during the formation of the laminated film.
Abstract:
To provide a display panel having such a structure that a color filter is unlikely to suffer damage due to a heat treatment in a reducing atmosphere in the fabrication process for display device. A display panel (anode panel AP) includes a fluorescent region formed on a substrate, and an electrode (anode electrode), formed on the fluorescent region, wherein electrons emitted from an electron source penetrate the electrode and collide with the fluorescent region to allow the fluorescent region to emit light to obtain a desired image, wherein a color filter and a color filter protective film are formed in this order from the side of the substrate between the substrate and the fluorescent region.
Abstract:
Disclosed herein is a manufacturing method of a display device including: forming a gate electrode on a substrate; forming a laminated film by photolithography technique. The laminated film is provided above the gate electrode with a gate insulating film sandwiched therebetween and includes a semiconductor layer, at least either a source/drain electrode or a pixel electrode, a planarizing film and a pixel isolation film. The manufacturing method further includes forming a functional layer and a common electrode in this order after the formation of the laminated film. The functional layer includes an organic electric field light-emitting layer. Two or more layers are patterned all together in at least part of the laminated film during the formation of the laminated film.
Abstract:
To provide a display panel having such a structure that a color filter is unlikely to suffer a damage due to a heat treatment in a reducing atmosphere in the fabrication process for display device. A display panel (anode panel AP) comprises a fluorescent region formed on a substrate, and an electrode (anode electrode) formed on the fluorescent region, wherein electrons emitted from an electron source penetrate the electrode and collide with the fluorescent region to allow the fluorescent region to emit light to obtain a desired image, wherein a color filter and a color filter protective film are formed in this order from the side of the substrate between the substrate and the fluorescent region.