公开(公告)号：US20190154518A1

公开(公告)日：2019-05-23

申请号：US16126816

申请日：2018-09-10

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Kan TAKEUCHI ,  Shinya KONISHI ,  Fumio TSUCHIYA ,  Masaki SHIMADA

IPC: G01K7/01 ,  G01R31/30

Abstract: An object of the present invention is to provide a technique of duplexing monitor circuits in which a common cause failure can be eliminated. A semiconductor device has: a first monitor circuit monitoring that temperature or voltage of the semiconductor device is within a normal operation range; and a second monitor circuit monitoring normal operation of the first monitor circuit. The first and second monitor circuits generate information of temperature or voltage on the basis of different principles.

公开(公告)号：US20170063075A1

公开(公告)日：2017-03-02

申请号：US15216883

申请日：2016-07-22

Applicant: Renesas Electronics Corporation

Inventor： Kan TAKEUCHI ,  Mitsuhiko IGARASHI ,  Makoto OGASAWARA

IPC: H02H3/16 ,  G01R31/02 ,  H02H3/02

CPC classification number: H02H3/16 ,  G01R31/025 ,  H02H3/04

Abstract: In a semiconductor device, an abnormality monitor unit detects whether abnormal leakage current has been generated from a first functional module or a second functional module on the basis of a comparison between a change in voltage at a first node between the first functional module and a first power switch when the first power switch is in an off state and a change in voltage at a second node between the second functional module and a second power switch when the second power switch is in the off state.

Abstract translation: 在半导体装置中，异常监视部基于第一功能模块与第一功能模块之间的第一节点处的电压变化的比较来检测是否从第一功能模块或第二功能模块产生异常泄漏电流 当第二电源开关处于关闭状态时，第二电源开关处于关闭状态时第二功能模块与第二电源开关之间的第二节点处的电压变化。

公开(公告)号：US20210080330A1

公开(公告)日：2021-03-18

申请号：US17009849

申请日：2020-09-02

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Kan TAKEUCHI ,  Yoshio TAKAZAWA ,  Fumio TSUCHIYA ,  Daisuke OSHIDA ,  Naoya OTA ,  Masaki SHIMADA ,  Shinya KONISHI

IPC: G01K1/02 ,  H02P29/68 ,  G01K7/01 ,  G08C17/02

Abstract: A semiconductor device according to an embodiment includes a holding circuit including a buffer configured to obtain a heat stress information having a temperature dependency every predetermined period and a stress counter configured to accumulate the heat stress information and hold the accumulated value as a cumulative stress count value, a control circuit including an operation determination threshold value, and a wireless communication circuit. According to the semiconductor device according to the embodiment, while reducing the power consumption, it is possible to wirelessly transmit the cumulative heat stress information.

公开(公告)号：US20200081757A1

公开(公告)日：2020-03-12

申请号：US16543129

申请日：2019-08-16

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Naoya OTA ,  Kan TAKEUCHI ,  Fumio TSUCHIYA ,  Masaki SHIMADA ,  Shinya KONISHI ,  Daisuke OSHIDA

IPC: G06F11/07

Abstract: The semiconductor device has a module having a predetermined function, an error information acquisition circuit for acquiring error information about an error occurring in the module, a stress acquisition circuit for acquiring a stress accumulated value as an accumulated value of stress applied to the semiconductor device, and an analysis data storage for storing analysis data as data for analyzing the state of the semiconductor device, the error information and the stress accumulated value at the time of occurrence of the error being associated with each other.

公开(公告)号：US20170187358A1

公开(公告)日：2017-06-29

申请号：US15367019

申请日：2016-12-01

Applicant: Renesas Electronics Corporation

Inventor： Kan TAKEUCHI ,  Masaki SHIMADA ,  Takeshi OKAGAKI ,  Yoshio TAKAZAWA

IPC: H03K3/03 ,  H03K5/159 ,  H03K3/011

CPC classification number: H03K3/0315 ,  G01R31/2856 ,  G01R31/31725 ,  H03K3/011 ,  H03K5/159

Abstract: There is to provide a semiconductor device capable of predicting a wear-out failure based on the degradation stress cumulative amount of power supply voltage and environmental temperature imposed on the device, which includes a ring oscillator having a plurality of stages of inverters, and a control circuit that emphasizes the voltage dependency and temperature dependency of an oscillation frequency of the ring oscillator or a control circuit that emphasizes the temperature dependency not the voltage dependency.

公开(公告)号：US20170038426A1

公开(公告)日：2017-02-09

申请号：US15178817

申请日：2016-06-10

Applicant: Renesas Electronics Corporation

Inventor： Mitsuhiko IGARASHI ,  Kan TAKEUCHI ,  Takeshi OKAGAKI

IPC: G01R31/26 ,  H03L1/00 ,  H03K3/03

CPC classification number: H03L1/00 ,  G01R31/2607 ,  G01R31/275 ,  G01R31/318505 ,  G06F11/008 ,  G06F11/076 ,  G06F11/3419 ,  G11C29/021 ,  H01L21/822 ,  H03B1/02 ,  H03K3/011 ,  H03K3/0315 ,  H03L7/0995

Abstract: In order to provide a semiconductor device capable of detecting HCI degradation of a semiconductor element in a simple structure, the semiconductor device includes an oscillation circuit including a plurality of logic gates of various driving forces which are formed by transistors and coupled in series, a frequency counter that measures an oscillation frequency of the oscillation circuit, and a comparator that compares the oscillation frequency of the oscillation circuit measured by the frequency counter with a predetermined value.

Abstract translation: 为了提供能够以简单的结构检测半导体元件的HCI劣化的半导体器件，半导体器件包括：振荡电路，其包括由晶体管形成并且串联耦合的各种驱动力的多个逻辑门，频率 计数器，其测量振荡电路的振荡频率;以及比较器，其将由频率计数器测量的振荡电路的振荡频率与预定值进行比较。

公开(公告)号：US20160291078A1

公开(公告)日：2016-10-06

申请号：US14973561

申请日：2015-12-17

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Masaki SHIMADA ,  Kan TAKEUCHI

IPC: G01R31/26 ,  G01R31/28

CPC classification number: G01R31/2642 ,  G01R31/2834 ,  G01R31/2856 ,  G01R31/3004

Abstract: An object of the invention is to provide a semiconductor apparatus capable of achieving conditions that are stricter than the conditions in which the stable operation is guaranteed, without increasing the circuit size. A semiconductor apparatus (10) includes a semiconductor circuit (11); a voltage generator (12) that selects one of at least two types of voltages and applies a power supply voltage, the at least two types of voltages including a normal voltage at which the semiconductor circuit (11) normally operates and a low voltage which is lower than the normal voltage; and a clock generator (13) that supplies the semiconductor circuit (11) with a clock signal having a constant frequency regardless of the power supply voltage.

Abstract translation: 本发明的目的是提供一种半导体装置，其能够在不增加电路尺寸的情况下实现比稳定操作保证的条件更严格的条件。 半导体装置（10）包括半导体电路（11）; 电压发生器（12），其选择至少两种类型的电压中的一种并施加电源电压，所述至少两种类型的电压包括半导体电路（11）正常工作的正常电压和低电压 低于正常电压; 以及时钟发生器（13），其与所述电源电压无关地向所述半导体电路（11）提供具有恒定频率的时钟信号。