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公开(公告)号：US20170063075A1
公开(公告)日：2017-03-02
申请号：US15216883
申请日：2016-07-22
Applicant: Renesas Electronics Corporation
Inventor： Kan TAKEUCHI , Mitsuhiko IGARASHI , Makoto OGASAWARA
CPC classification number: H02H3/16 , G01R31/025 , H02H3/04
Abstract: In a semiconductor device, an abnormality monitor unit detects whether abnormal leakage current has been generated from a first functional module or a second functional module on the basis of a comparison between a change in voltage at a first node between the first functional module and a first power switch when the first power switch is in an off state and a change in voltage at a second node between the second functional module and a second power switch when the second power switch is in the off state.
Abstract translation: 在半导体装置中，异常监视部基于第一功能模块与第一功能模块之间的第一节点处的电压变化的比较来检测是否从第一功能模块或第二功能模块产生异常泄漏电流 当第二电源开关处于关闭状态时，第二电源开关处于关闭状态时第二功能模块与第二电源开关之间的第二节点处的电压变化。
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公开(公告)号：US20170038426A1
公开(公告)日：2017-02-09
申请号：US15178817
申请日：2016-06-10
Applicant: Renesas Electronics Corporation
Inventor： Mitsuhiko IGARASHI , Kan TAKEUCHI , Takeshi OKAGAKI
CPC classification number: H03L1/00 , G01R31/2607 , G01R31/275 , G01R31/318505 , G06F11/008 , G06F11/076 , G06F11/3419 , G11C29/021 , H01L21/822 , H03B1/02 , H03K3/011 , H03K3/0315 , H03L7/0995
Abstract: In order to provide a semiconductor device capable of detecting HCI degradation of a semiconductor element in a simple structure, the semiconductor device includes an oscillation circuit including a plurality of logic gates of various driving forces which are formed by transistors and coupled in series, a frequency counter that measures an oscillation frequency of the oscillation circuit, and a comparator that compares the oscillation frequency of the oscillation circuit measured by the frequency counter with a predetermined value.
Abstract translation: 为了提供能够以简单的结构检测半导体元件的HCI劣化的半导体器件，半导体器件包括：振荡电路，其包括由晶体管形成并且串联耦合的各种驱动力的多个逻辑门，频率 计数器，其测量振荡电路的振荡频率;以及比较器，其将由频率计数器测量的振荡电路的振荡频率与预定值进行比较。
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公开(公告)号：US20240159598A1
公开(公告)日：2024-05-16
申请号：US18483850
申请日：2023-10-10
Applicant: RENESAS ELECTRONICS CORPORATION
Inventor： Mitsuhiko IGARASHI
Abstract: A semiconductor device includes: a local sensor including a transistor, arranged in proximity to a measurement target region in a semiconductor chip, and outputs a leak current of the transistor as a sensor signal according to a temperature in the measurement target region; a conversion circuit arranged on the semiconductor chip, and converting the sensor signal from the local sensor into a digital count value; and a circuit block arranged between the local sensor and the conversion circuit in the semiconductor chip when viewed in a plan view.
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公开(公告)号：US20180089052A1
公开(公告)日：2018-03-29
申请号：US15707710
申请日：2017-09-18
Applicant: RENESAS ELECTRONICS CORPORATION
Inventor： Mitsuhiko IGARASHI
Abstract: A ring oscillator for detecting a characteristic degradation of MOSFETs is required to be highly sensitive to NBTI degradation or PBTI degradation. A semiconductor device comprises a ring oscillator and a delay detecting circuit which detects a delay through gate circuits based on the oscillation frequency of the ring oscillator. The ring oscillator comprises an input terminal to which an oscillation control signal is input, an output terminal which outputs an oscillation signal, an oscillation control gate circuit having a first input terminal which is coupled to the input terminal and a second input terminal to which a terminal different from the input terminal is coupled, NAND circuits, and NOR circuits. The NAND and NOR circuits are cascade coupled alternately, plural inputs of the NAND circuits and of the NOR circuits are coupled together, and drive power of the NAND circuits differs from drive power of the NOR circuits.
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