公开(公告)号：US20190154518A1

公开(公告)日：2019-05-23

申请号：US16126816

申请日：2018-09-10

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Kan TAKEUCHI ,  Shinya KONISHI ,  Fumio TSUCHIYA ,  Masaki SHIMADA

IPC: G01K7/01 ,  G01R31/30

Abstract: An object of the present invention is to provide a technique of duplexing monitor circuits in which a common cause failure can be eliminated. A semiconductor device has: a first monitor circuit monitoring that temperature or voltage of the semiconductor device is within a normal operation range; and a second monitor circuit monitoring normal operation of the first monitor circuit. The first and second monitor circuits generate information of temperature or voltage on the basis of different principles.

公开(公告)号：US20180040521A1

公开(公告)日：2018-02-08

申请号：US15785531

申请日：2017-10-17

Applicant: Renesas Electronics Corporation

Inventor： Bunji YASUMURA ,  Fumio TSUCHIYA ,  Hisanori ITO ,  Takuji IDE ,  Naoki KAWANABE ,  Masanao SATO

IPC: H01L21/66 ,  H01L23/31 ,  H01L23/00 ,  H01L23/498

CPC classification number: H01L22/32 ,  H01L23/3114 ,  H01L23/49816 ,  H01L23/49838 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/85 ,  H01L2224/02166 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05553 ,  H01L2224/05624 ,  H01L2224/0613 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48157 ,  H01L2224/48227 ,  H01L2224/4845 ,  H01L2224/48463 ,  H01L2224/48465 ,  H01L2224/48624 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2224/85399 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01025 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/05042 ,  H01L2924/10253 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/30107 ,  H01L2924/3512 ,  H01L2924/00

Abstract: A technique is provided that can prevent cracking of a protective film in the uppermost layer of a semiconductor device and improve the reliability of the semiconductor device. Bonding pads formed over a principal surface of a semiconductor chip are in a rectangular shape, and an opening is formed in a protective film over each bonding pad in such a manner that an overlapping width of the protective film in a wire bonding region of each bonding pad becomes wider than an overlapping width of the protective film in a probe region of each bonding pad.

公开(公告)号：US20210080330A1

公开(公告)日：2021-03-18

申请号：US17009849

申请日：2020-09-02

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Kan TAKEUCHI ,  Yoshio TAKAZAWA ,  Fumio TSUCHIYA ,  Daisuke OSHIDA ,  Naoya OTA ,  Masaki SHIMADA ,  Shinya KONISHI

IPC: G01K1/02 ,  H02P29/68 ,  G01K7/01 ,  G08C17/02

Abstract: A semiconductor device according to an embodiment includes a holding circuit including a buffer configured to obtain a heat stress information having a temperature dependency every predetermined period and a stress counter configured to accumulate the heat stress information and hold the accumulated value as a cumulative stress count value, a control circuit including an operation determination threshold value, and a wireless communication circuit. According to the semiconductor device according to the embodiment, while reducing the power consumption, it is possible to wirelessly transmit the cumulative heat stress information.

公开(公告)号：US20200081757A1

公开(公告)日：2020-03-12

申请号：US16543129

申请日：2019-08-16

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Naoya OTA ,  Kan TAKEUCHI ,  Fumio TSUCHIYA ,  Masaki SHIMADA ,  Shinya KONISHI ,  Daisuke OSHIDA

IPC: G06F11/07

Abstract: The semiconductor device has a module having a predetermined function, an error information acquisition circuit for acquiring error information about an error occurring in the module, a stress acquisition circuit for acquiring a stress accumulated value as an accumulated value of stress applied to the semiconductor device, and an analysis data storage for storing analysis data as data for analyzing the state of the semiconductor device, the error information and the stress accumulated value at the time of occurrence of the error being associated with each other.

公开(公告)号：US20170018470A1

公开(公告)日：2017-01-19

申请号：US15280618

申请日：2016-09-29

Applicant: Renesas Electronics Corporation

Inventor： Bunji YASUMURA ,  Fumio TSUCHIYA ,  Hisanori ITO ,  Takuji IDE ,  Naoki KAWANABE ,  Masanao SATO

IPC: H01L21/66 ,  H01L23/31 ,  H01L23/00 ,  H01L23/498

CPC classification number: H01L22/32 ,  H01L23/3114 ,  H01L23/49816 ,  H01L23/49838 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/85 ,  H01L2224/02166 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05553 ,  H01L2224/05624 ,  H01L2224/0613 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48157 ,  H01L2224/48227 ,  H01L2224/4845 ,  H01L2224/48463 ,  H01L2224/48465 ,  H01L2224/48624 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2224/85399 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01025 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/05042 ,  H01L2924/10253 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/30107 ,  H01L2924/3512 ,  H01L2924/00

Abstract: A technique is provided that can prevent cracking of a protective film in the uppermost layer of a semiconductor device and improve the reliability of the semiconductor device. Bonding pads formed over a principal surface of a semiconductor chip are in a rectangular shape, and an opening is formed in a protective film over each bonding pad in such a manner that an overlapping width of the protective film in a wire bonding region of each bonding pad becomes wider than an overlapping width of the protective film in a probe region of each bonding pad.

Abstract translation: 提供了能够防止半导体装置的最上层的保护膜的破裂的技术，提高了半导体装置的可靠性。 在半导体芯片的主表面上形成的接合焊盘为矩形，并且在每个接合焊盘上的保护膜中形成开口，使得保护膜在每个接合的引线接合区域中的重叠宽度 衬垫比每个焊盘的探针区域中的保护膜的重叠宽度宽。