Wafer cleaning solution for cobalt electroless application
    1.
    发明授权
    Wafer cleaning solution for cobalt electroless application 有权
    用于钴无电镀的晶圆清洗液

    公开(公告)号:US07273813B2

    公开(公告)日:2007-09-25

    申请号:US11053501

    申请日:2005-02-08

    IPC分类号: H01L21/44

    摘要: A method and cleaning solution that removes contaminants from a dielectric material and polished surfaces of copper interconnect structures prior to an electroless deposition of a capping layer without substantially adversely affecting the interconnect formed therefrom are disclosed. The cleaning solution includes combinations of a core mixture and sulfuric acid or sulfonic compounds such as sulfonic acids that include methanesulfonic acid. In one embodiment, the core mixture includes a citric acid solution and a pH adjuster such as tetra-methyl ammonium hydroxide or ammonia. One embodiment of the method includes providing a planarized substrate, applying the cleaning solution to the substrate to simultaneously clean at least one metal feature and a dielectric material of the substrate, and depositing the metal capping layer selectively on the at least one metal feature using electroless deposition.

    摘要翻译: 公开了一种方法和清洁溶液,其在电绝缘沉积覆盖层之前从电介质材料和铜互连结构的抛光表面去除污染物,而基本上不利地影响由其形成的互连。 清洁溶液包括核混合物和硫酸或磺酸化合物如包括甲磺酸的磺酸的组合。 在一个实施方案中,核心混合物包括柠檬酸溶液和pH调节剂如四甲基氢氧化铵或氨。 该方法的一个实施例包括提供平坦化的基板,将清洁溶液施加到基板上以同时清洁基板的至少一个金属特征和介电材料,并且使用无电镀将金属覆盖层选择性地沉积在至少一个金属特征上 沉积

    Capillary ring
    2.
    发明授权
    Capillary ring 失效
    毛细管环

    公开(公告)号:US06708701B2

    公开(公告)日:2004-03-23

    申请号:US09981589

    申请日:2001-10-16

    申请人: Ramin Emami

    发明人: Ramin Emami

    IPC分类号: B08B304

    摘要: The present invention provides an apparatus for removing an edge bead from a substrate. The apparatus includes a substrate support member, a plurality of mounting posts positioned along a perimeter of the substrate support member, and a rigid annular capillary ring mounted to the plurality of mounting posts. The rigid annular capillary ring includes a substantially planar upper capillary surface and is configured to maintain the substantially planar capillary surface when attached to the mounting posts.

    摘要翻译: 本发明提供一种用于从基底去除边缘珠的装置。 该装置包括基板支撑构件,沿着基板支撑构件的周边定位的多个安装柱以及安装到多个安装柱的刚性环形毛细管环。 刚性环形毛细管环包括基本上平面的上毛细管表面,并且构造成在附接到安装柱时保持基本上平面的毛细管表面。

    Multi-phase polishing pad
    3.
    发明授权
    Multi-phase polishing pad 失效
    多相抛光垫

    公开(公告)号:US06857941B2

    公开(公告)日:2005-02-22

    申请号:US10139112

    申请日:2002-05-02

    CPC分类号: B24B37/24 B24D7/14

    摘要: An article of manufacture, a method, and an apparatus for use in a chemical mechanical polishing system is provided. In one aspect, an article of manufacture is provided for polishing a substrate including a polishing article having a polishing surface, the polishing surface including a first polishing portion having a first polishing material of a first hardness for polishing a first portion of the substrate, and a second polishing portion having a second polishing material of a second hardness for polishing a second portion of the substrate. The article of manufacture may be disposed on a rotatable, stationary, or linear platen for processing a substrate. In another aspect, a method is provided for processing a substrate, including providing a platen containing the polishing article disposed on the rotatable platen, delivering a polishing composition to the polishing article, and contacting a substrate on the polishing article.

    摘要翻译: 提供了一种用于化学机械抛光系统的制品,方法和设备。 在一个方面,提供了一种用于抛光包括具有抛光表面的抛光制品的基底的制品,所述抛光表面包括具有用于抛光所述基底的第一部分的第一硬度的第一抛光材料的第一抛光部分,以及 第二抛光部分,具有第二硬度的第二抛光材料,用于抛光衬底的第二部分。 制品可以设置在可旋转,静止或直线的压板上,用于处理衬底。 在另一方面,提供了一种用于处理基板的方法,包括提供包含设置在可旋转压板上的抛光制品的压板,将抛光组合物输送到抛光制品,以及使抛光制品上的基板接触。

    Platen for retaining polishing material
    4.
    发明授权
    Platen for retaining polishing material 有权
    压板用于保留抛光材料

    公开(公告)号:US06592439B1

    公开(公告)日:2003-07-15

    申请号:US09709769

    申请日:2000-11-10

    IPC分类号: B24B2900

    摘要: Generally, a method and apparatus for retaining polishing material is provided. In one embodiment, the apparatus includes a platen having a top surface, a plurality of channels and one or more vacuum ports. The top surface is adapted to support the polishing material. The plurality of channels are formed in a polishing area of the top surface. The vacuum ports are disposed in the platen and at least one port is in communication with at least one of the channels. Upon application of a vacuum to the ports, the channels remove fluids under the polishing material while securing the polishing material to the top surface.

    摘要翻译: 通常,提供了用于保持抛光材料的方法和装置。 在一个实施例中,该装置包括具有顶表面,多个通道和一个或多个真空端口的压板。 顶表面适于支撑抛光材料。 多个通道形成在顶表面的抛光区域中。 真空端口设置在压板中,并且至少一个端口与至少一个通道连通。 当向端口施加真空时,通道在将抛光材料固定到顶表面的同时移除抛光材料下面的流体。

    Vibration damping in chemical mechanical polishing system
    5.
    发明授权
    Vibration damping in chemical mechanical polishing system 失效
    化学机械抛光系统中的振动阻尼

    公开(公告)号:US07331847B2

    公开(公告)日:2008-02-19

    申请号:US11333992

    申请日:2006-01-17

    IPC分类号: B24B7/00 B24B9/00

    摘要: A carrier head for chemical mechanical polishing, includes a base, a support structure attached to the base having a surface for contacting a substrate, and a retaining structure attached to the base to prevent the substrate from moving along the surface. The retaining structure and the surface define a cavity for receiving the substrate. A polishing station includes a platen, a vibration damper mounted on the platen and a substrate polishing pad mounted on the vibration damper. The vibration damper includes a material that does not rebound to its original shape when subjected to a deformation.

    摘要翻译: 用于化学机械抛光的载体头包括基底,附着到具有用于接触基底的表面的基部的支撑结构以及附接到基部的保持结构,以防止基底沿着表面移动。 保持结构和表面限定用于接收基底的空腔。 抛光台包括压板,安装在压板上的振动阻尼器和安装在振动阻尼器上的衬底抛光垫。 振动阻尼器包括当经受变形时不会反弹到其原始形状的材料。

    Multi-phase polishing pad
    6.
    发明申请
    Multi-phase polishing pad 失效
    多相抛光垫

    公开(公告)号:US20050189235A1

    公开(公告)日:2005-09-01

    申请号:US11063653

    申请日:2005-02-22

    CPC分类号: B24B37/24 B24D7/14

    摘要: An article of manufacture, a method, and an apparatus for use in a chemical mechanical polishing system is provided. In one aspect, an article of manufacture is provided for polishing a substrate including a polishing article having a polishing surface, the polishing surface including a first polishing portion having a first polishing material of a first hardness for polishing a first portion of the substrate, and a second polishing portion having a second polishing material of a second hardness for polishing a second portion of the substrate. The article of manufacturer may be disposed on a rotatable, stationary, or linear platen for processing a substrate. In another aspect, a method is provided for processing a substrate, including providing a platen containing the polishing article disposed on the rotatable platen, delivering a polishing composition to the polishing article, and contacting a substrate on the polishing article.

    摘要翻译: 提供了一种用于化学机械抛光系统的制品,方法和设备。 在一个方面,提供了一种用于抛光包括具有抛光表面的抛光制品的基底的制品,所述抛光表面包括具有用于抛光所述基底的第一部分的第一硬度的第一抛光材料的第一抛光部分,以及 第二抛光部分,具有第二硬度的第二抛光材料,用于抛光衬底的第二部分。 制造商可以设置在可旋转,静止或直线的压板上,用于处理衬底。 在另一方面,提供了一种用于处理基板的方法,包括提供包含设置在可旋转压板上的抛光制品的压板,将抛光组合物输送到抛光制品,以及使抛光制品上的基板接触。

    Electroless cobalt alloy deposition process
    7.
    发明申请
    Electroless cobalt alloy deposition process 审中-公开
    无电钴合金沉积工艺

    公开(公告)号:US20050161338A1

    公开(公告)日:2005-07-28

    申请号:US10970839

    申请日:2004-10-21

    摘要: In one embodiment, a method for depositing a cobalt-containing capping layer on a metal layer is provided which includes rinsing the metal layer with a deionized water wetting step, depositing a palladium layer on the metal layer by exposing the metal layer to an electroless activation solution comprising a palladium precursor and an acid, and depositing the cobalt-containing capping layer on the palladium layer by exposing the palladium layer to an electroless cobalt-containing solution comprising a cobalt source, a tungsten source, an oxygen scavenger and a surfactant. Ascorbic acid may be used as the oxygen scavenger. In another embodiment, a composition of an electroless plating solution is provided which includes a cobalt source at a concentration in a range from about 50 mM to about 250 mM, a tungsten source at a concentration in a range from about 10 mM to about 100 mM, a complexing agent at a concentration in a range from about 10 mM to about 200 mM, at least one reductant at a concentration in a range from about 1 mM to about 100 mM, a surfactant at a concentration in a range from about 1 mg/L to about 100 mg/L, and ascorbic acid at a concentration in a range from about 30 mg/L to about 300 mg/L.

    摘要翻译: 在一个实施例中,提供了一种用于在金属层上沉积含钴覆盖层的方法,其包括用去离子水润湿步骤冲洗金属层,通过将金属层暴露于无电激活 包含钯前体和酸的溶液,并通过将钯层暴露于包含钴源,钨源,除氧剂和表面活性剂的无电镀钴溶液中,将钯覆盖层沉积在钯层上。 可以使用抗坏血酸作为除氧剂。 在另一个实施方案中,提供了化学镀溶液的组合物,其包含浓度在约50mM至约250mM范围内的钴源,浓度范围为约10mM至约100mM的钨源 浓度范围为约10mM至约200mM的络合剂,至少一种浓度为约1mM至约100mM的还原剂,浓度为约1mg的表面活性剂 L至约100mg / L,抗坏血酸浓度为约30mg / L至约300mg / L。

    Thermal preconditioning fixed abrasive articles
    8.
    发明授权
    Thermal preconditioning fixed abrasive articles 失效
    热预处理固定磨料制品

    公开(公告)号:US06832948B1

    公开(公告)日:2004-12-21

    申请号:US09454354

    申请日:1999-12-03

    IPC分类号: B24B100

    摘要: The CMP removal rate of a fixed abrasive article is increased and wafer-to-wafer uniformity enhanced by thermal preconditioning. Embodiments include preconditioning a fixed abrasive article by heating with hot water to a temperature of about 90° C. to about 100° C. to increase and stabilize the Cu or Cu alloy CMP removal rate.

    摘要翻译: 固定磨料制品的CMP去除率增加,并且通过热预处理提高了晶片到晶片的均匀性。 实施例包括通过用热水加热至约90℃至约100℃的温度来预固定固定的磨料制品,以增加和稳定Cu或Cu合金CMP去除速率。

    Barrier layer buffing after Cu CMP
    9.
    发明授权
    Barrier layer buffing after Cu CMP 失效
    Cu CMP后的阻隔层抛光

    公开(公告)号:US06656842B2

    公开(公告)日:2003-12-02

    申请号:US09401643

    申请日:1999-09-22

    IPC分类号: H01L21302

    CPC分类号: H01L21/3212

    摘要: Deposited Cu is initially removed by CMP with fixed abrasive polishing pads stopping on the barrier layer, e.g., Ta or TaN. Buffing is then conducted selectively with respect to Cu: Ta or TaN and Cu: silicon oxide to remove the barrier layer and control dishing to no greater than 100 Å.

    摘要翻译: 首先通过CMP去除沉积的Cu,固定的研磨抛光垫停止在阻挡层上,例如Ta或TaN上。 然后相对于Cu:Ta或TaN和Cu:氧化硅选择性地进行抛光以去除阻挡层并将凹陷控制在不大于100埃。