发明授权
- 专利标题： Barrier layer buffing after Cu CMP
- 专利标题（中）： Cu CMP后的阻隔层抛光
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申请号： US09401643申请日： 1999-09-22
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公开(公告)号： US06656842B2公开(公告)日： 2003-12-02
- 发明人: Shijian Li , Fred C. Redeker , Ramin Emami , Sen-Hou Ko , John M. White
- 申请人： Shijian Li , Fred C. Redeker , Ramin Emami , Sen-Hou Ko , John M. White
- 主分类号： H01L21302
- IPC分类号： H01L21302
摘要：
Deposited Cu is initially removed by CMP with fixed abrasive polishing pads stopping on the barrier layer, e.g., Ta or TaN. Buffing is then conducted selectively with respect to Cu: Ta or TaN and Cu: silicon oxide to remove the barrier layer and control dishing to no greater than 100 Å.
公开/授权文献
- US20010055880A1 BARRIER LAYER BUFFING AFTER CU CMP 公开/授权日：2001-12-27
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