公开(公告)号：US10446657B2

公开(公告)日：2019-10-15

申请号：US15884932

申请日：2018-01-31

申请人： ROHM CO., LTD.

发明人： Yuki Nakano ,  Ryota Nakamura ,  Katsuhisa Nagao

IPC分类号： H01L29/10 ,  H01L29/423 ,  H01L21/04 ,  H01L29/04 ,  H01L29/16 ,  H01L29/66 ,  H01L29/786 ,  H01L29/167 ,  H01L29/49 ,  H01L29/78

摘要： A semiconductor device includes a semiconductor region made of a material to which conductive impurities are added, an insulating film formed on a surface of the semiconductor region, and an electroconductive gate electrode formed on the insulating film. The gate electrode is made of a material whose Fermi level is closer to a Fermi level of the semiconductor region than a Fermi level of Si in at least a portion contiguous to the insulating film.

公开(公告)号：US11367738B2

公开(公告)日：2022-06-21

申请号：US17109676

申请日：2020-12-02

申请人： ROHM CO., LTD.

发明人： Katsuhisa Nagao ,  Noriaki Kawamoto

IPC分类号： H01L27/07 ,  H01L27/118 ,  H01L29/16 ,  H01L29/739 ,  H01L29/423 ,  H01L29/78 ,  H01L23/528 ,  H01L29/06 ,  H01L29/10 ,  H01L23/532

摘要： A semiconductor device (1) is manufactured which includes a SiC epitaxial layer (28), a plurality of transistor cells (18) that are formed in the SiC epitaxial layer (28) and that are subjected to ON/OFF control by a predetermined control voltage, a gate electrode (19) that faces a channel region (32) of the transistor cells (18) in which a channel is formed when the semiconductor device (1) is in an ON state, a gate metal (44) that is exposed at the topmost surface for electrical connection with the outside and that is electrically connected to the gate electrode (19) while being physically separated from the gate electrode (19), and a built-in resistor (21) that is made of polysilicon and that is disposed below the gate metal (44) so as to electrically connect the gate metal (44) and the gate electrode (19) together.

公开(公告)号：US10886300B2

公开(公告)日：2021-01-05

申请号：US16555843

申请日：2019-08-29

申请人： ROHM CO., LTD.

发明人： Katsuhisa Nagao ,  Noriaki Kawamoto

IPC分类号： H01L27/07 ,  H01L27/118 ,  H01L29/16 ,  H01L29/739 ,  H01L29/423 ,  H01L29/78 ,  H01L23/528 ,  H01L29/06 ,  H01L29/10 ,  H01L23/532

摘要： A semiconductor device (1) is manufactured which includes a SiC epitaxial layer (28), a plurality of transistor cells (18) that are formed in the SiC epitaxial layer (28) and that are subjected to ON/OFF control by a predetermined control voltage, a gate electrode (19) that faces a channel region (32) of the transistor cells (18) in which a channel is formed when the semiconductor device (1) is in an ON state, a gate metal (44) that is exposed at the topmost surface for electrical connection with the outside and that is electrically connected to the gate electrode (19) while being physically separated from the gate electrode (19), and a built-in resistor (21) that is made of polysilicon and that is disposed below the gate metal (44) so as to electrically connect the gate metal (44) and the gate electrode (19) together.

公开(公告)号：US09601582B2

公开(公告)日：2017-03-21

申请号：US14958867

申请日：2015-12-03

申请人： ROHM CO., LTD.

发明人： Yuki Nakano ,  Ryota Nakamura ,  Katsuhisa Nagao

IPC分类号： H01L29/10 ,  H01L29/16 ,  H01L21/04 ,  H01L29/04 ,  H01L29/66 ,  H01L29/786 ,  H01L29/49 ,  H01L29/78 ,  H01L29/423 ,  H01L29/167

CPC分类号： H01L29/4236 ,  H01L21/046 ,  H01L21/049 ,  H01L29/045 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/167 ,  H01L29/4916 ,  H01L29/4925 ,  H01L29/66068 ,  H01L29/7813 ,  H01L29/78684

摘要： A semiconductor device includes a semiconductor region made of a material to which conductive impurities are added, an insulating film formed on a surface of the semiconductor region, and an electroconductive gate electrode formed on the insulating film. The gate electrode is made of a material whose Fermi level is closer to a Fermi level of the semiconductor region than a Fermi level of Si in at least a portion contiguous to the insulating film.

公开(公告)号：US20140014972A1

公开(公告)日：2014-01-16

申请号：US14030765

申请日：2013-09-18

申请人： ROHM CO., LTD.

发明人： Yuki NAKANO ,  Ryota Nakamura ,  Katsuhisa Nagao

IPC分类号： H01L29/423

CPC分类号： H01L29/4236 ,  H01L21/046 ,  H01L21/049 ,  H01L29/045 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/167 ,  H01L29/4916 ,  H01L29/4925 ,  H01L29/66068 ,  H01L29/7813 ,  H01L29/78684

摘要： The semiconductor device of the present invention includes a semiconductor region made of a material to which conductive impurities are added, an insulating film formed on a surface of the semiconductor region, and an electroconductive gate electrode formed on the insulating film. The gate electrode is made of a material whose Fermi level is closer to a Fermi level of the semiconductor region than a Fermi level of Si in at least a portion contiguous to the insulating film.

摘要翻译： 本发明的半导体器件包括由添加导电杂质的材料制成的半导体区域，形成在半导体区域的表面上的绝缘膜和形成在绝缘膜上的导电栅电极。 栅极电极由与绝缘膜相邻的至少一部分中的费米能级比第一半导体区域的费米能级低于费米能级的材料制成。

公开(公告)号：US20130168699A1

公开(公告)日：2013-07-04

申请号：US13774549

申请日：2013-02-22

申请人： Rohm Co., Ltd.

发明人： Yuki Nakano ,  Ryota Nakamura ,  Katsuhisa Nagao

IPC分类号： H01L29/786

CPC分类号： H01L29/4236 ,  H01L21/046 ,  H01L21/049 ,  H01L29/045 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/167 ,  H01L29/4916 ,  H01L29/4925 ,  H01L29/66068 ,  H01L29/7813 ,  H01L29/78684

摘要： The semiconductor device of the present invention includes a semiconductor region made of a material to which conductive impurities are added, an insulating film formed on a surface of the semiconductor region, and an electroconductive gate electrode formed on the insulating film. The gate electrode is made of a material whose Fermi level is closer to a Fermi level of the semiconductor region than a Fermi level of Si in at least a portion contiguous to the insulating film.

摘要翻译： 本发明的半导体器件包括由添加导电杂质的材料制成的半导体区域，形成在半导体区域的表面上的绝缘膜和形成在绝缘膜上的导电栅电极。 栅极电极由与绝缘膜相邻的至少一部分中的费米能级比第一半导体区域的费米能级低于费米能级的材料制成。

公开(公告)号：US12046641B2

公开(公告)日：2024-07-23

申请号：US16878326

申请日：2020-05-19

申请人： ROHM CO., LTD.

发明人： Katsuhisa Nagao ,  Hidetoshi Abe

IPC分类号： H01L29/16 ,  H01L23/535 ,  H01L23/60 ,  H01L29/06 ,  H01L29/36 ,  H01L29/423 ,  H01L29/47 ,  H01L29/51 ,  H01L29/739 ,  H01L29/78 ,  H01L29/872 ,  H01L23/31

CPC分类号： H01L29/1608 ,  H01L23/535 ,  H01L23/60 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/36 ,  H01L29/4236 ,  H01L29/47 ,  H01L29/51 ,  H01L29/739 ,  H01L29/78 ,  H01L29/7811 ,  H01L29/872 ,  H01L23/3171

摘要： According to the present invention, a semiconductor device includes a first conductivity type SiC layer, an electrode that is selectively formed upon the SiC layer, and an insulator that is formed upon the SiC layer and that extends to a timing region that is set at an end part of the SiC layer. The insulator includes an electrode lower insulating film that is arranged below the electrode, and an organic insulating layer that is arranged so as to cover the electrode lower insulating film. The length (A) of the interval wherein the organic insulating layer contacts the SiC layer is 40 μm or more, and the lateral direction distance (B) along the electrode lower insulating layer between the electrode and SiC layer is 40 μm or more.

公开(公告)号：US11862672B2

公开(公告)日：2024-01-02

申请号：US17354500

申请日：2021-06-22

申请人： ROHM CO., LTD.

发明人： Katsuhisa Nagao

IPC分类号： H01L29/872 ,  H01L29/06 ,  G01R31/12 ,  H01L29/78 ,  H01L29/47 ,  H01L21/78 ,  H01L29/16 ,  H01L21/66 ,  H01L21/761 ,  H01L29/40 ,  G01R31/26

CPC分类号： H01L29/0623 ,  G01R31/129 ,  H01L21/761 ,  H01L21/78 ,  H01L22/14 ,  H01L29/0619 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/1608 ,  H01L29/408 ,  H01L29/47 ,  H01L29/78 ,  H01L29/7811 ,  H01L29/872 ,  G01R31/2648 ,  H01L2224/0603

摘要： [Object] To provide a semiconductor device capable of improving a discharge starting voltage when measuring electric characteristics, and widening a pad area of a surface electrode or increasing the number of semiconductor devices (number of chips) to be obtained from one wafer, and a method for manufacturing the same.
[Solution Means] A semiconductor device 1 includes an n-type SiC layer 2 having a first surface 2A, a second surface 2B, and end faces 2C, a p-type voltage relaxing layer 7 formed in the SiC layer 2 so as to be exposed to the end portion of the first surface 2A of the SiC layer 2, an insulating layer 8 formed on the SiC layer 2 so as to cover the voltage relaxing layer 7, and an anode electrode 9 that is connected to the first surface 2A of the SiC layer 2 through the insulating layer 8 and has a pad area 95 selectively exposed.

公开(公告)号：US11215647B2

公开(公告)日：2022-01-04

申请号：US16891957

申请日：2020-06-03

申请人： ROHM CO., LTD.

发明人： Katsuhisa Nagao

IPC分类号： H01L29/06 ,  G01R19/00 ,  H01L29/66 ,  H01L29/78 ,  H01L27/088 ,  H01L29/16

摘要： A SiC semiconductor device is provided that is capable of improving the detection accuracy of the current value of a principal current detected by a current sensing portion by restraining heat from escaping from the current sensing portion to a wiring member joined to a sensing-side surface electrode. The semiconductor device 1 includes a SiC semiconductor substrate, a source portion 27 including a principal-current-side unit cell 34, a current sensing portion 26 including a sensing-side unit cell 40, a source-side surface electrode 5 disposed above the source portion 27, and a sensing-side surface electrode 6 that is disposed above the current sensing portion 26 and that has a sensing-side pad 15 to which a sensing-side wire is joined, and, in the semiconductor device 1, the sensing-side unit cell 40 is disposed so as to avoid being positioned directly under the sensing-side pad 15.

公开(公告)号：US10692978B2

公开(公告)日：2020-06-23

申请号：US15311459

申请日：2015-05-15

申请人： ROHM CO., LTD.

发明人： Katsuhisa Nagao ,  Hidetoshi Abe

IPC分类号： H01L29/16 ,  H01L29/47 ,  H01L29/78 ,  H01L29/739 ,  H01L29/872 ,  H01L23/60 ,  H01L29/06 ,  H01L23/535 ,  H01L29/36 ,  H01L29/423 ,  H01L29/51 ,  H01L23/31

摘要： According to the present invention, a semiconductor device includes a first conductivity type SiC layer, an electrode that is selectively formed upon the SiC layer, and an insulator that is formed upon the SiC layer and that extends to a timing region that is set at an end part of the SiC layer. The insulator includes an electrode lower insulating film that is arranged below the electrode, and an organic insulating layer that is arranged so as to cover the electrode lower insulating film. The length (A) of the interval wherein the organic insulating layer contacts the SiC layer is 40 μm or more, and the lateral direction distance (B) along the electrode lower insulating layer between the electrode and SiC layer is 40 μm or more.