- 专利标题： Semiconductor device
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申请号： US15884932申请日： 2018-01-31
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公开(公告)号： US10446657B2公开(公告)日： 2019-10-15
- 发明人: Yuki Nakano , Ryota Nakamura , Katsuhisa Nagao
- 申请人： ROHM CO., LTD.
- 申请人地址： JP Kyoto
- 专利权人： ROHM CO., LTD.
- 当前专利权人： ROHM CO., LTD.
- 当前专利权人地址： JP Kyoto
- 优先权： JP2009-170154 20090721; JP2009-233777 20091007; JP2010-152085 20100702
- 主分类号： H01L29/10
- IPC分类号： H01L29/10 ; H01L29/423 ; H01L21/04 ; H01L29/04 ; H01L29/16 ; H01L29/66 ; H01L29/786 ; H01L29/167 ; H01L29/49 ; H01L29/78
摘要：
A semiconductor device includes a semiconductor region made of a material to which conductive impurities are added, an insulating film formed on a surface of the semiconductor region, and an electroconductive gate electrode formed on the insulating film. The gate electrode is made of a material whose Fermi level is closer to a Fermi level of the semiconductor region than a Fermi level of Si in at least a portion contiguous to the insulating film.
公开/授权文献
- US10340351B2 Semiconductor device 公开/授权日：2019-07-02
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