公开(公告)号：US10930730B2

公开(公告)日：2021-02-23

申请号：US15816295

申请日：2017-11-17

Applicant: QUALCOMM Incorporated

Inventor： Ye Lu ,  Yun Yue ,  Phanikumar Konkapaka ,  Bin Yang ,  Chuan-Hsing Chen

IPC: H01L23/52 ,  H01L27/08 ,  H01L29/06 ,  H01L23/522 ,  H01L29/78 ,  H01L29/93

Abstract: A metal-oxide-semiconductor (MOS) device for radio frequency (RF) applications may include a guard ring. The guard ring may surround the MOS device and at least one other MOS device. The MOS device may further include a level zero contact layer coupled to a first interconnect layer through level zero interconnects and vias. The first interconnect layer may be for routing to the MOS device.

公开(公告)号：US10333007B2

公开(公告)日：2019-06-25

申请号：US15686827

申请日：2017-08-25

Applicant: QUALCOMM Incorporated

Inventor： Ye Lu ,  Yun Yue ,  Chuan-Hsing Chen ,  Bin Yang ,  Lixin Ge ,  Ken Liao

IPC: H01L29/93 ,  H01L29/66 ,  H01L29/423 ,  H01L29/45 ,  H01L23/482 ,  H01L23/485 ,  H01L23/66

Abstract: A short-channel metal oxide semiconductor varactor may include a source region of a first polarity having a source via contact. The varactor may further include a drain region of the first polarity having a drain via contact. The varactor may further include a channel region of the first polarity between the source region and the drain region. The channel region may include a gate. The varactor may further include at least one self-aligned contact (SAC) on the gate and between the source via contact and the drain via contact.

公开(公告)号：US10665678B2

公开(公告)日：2020-05-26

申请号：US16288558

申请日：2019-02-28

Applicant: QUALCOMM Incorporated

Inventor： Ye Lu ,  Junjing Bao ,  Bin Yang ,  Lixin Ge ,  Yun Yue

IPC: H01L21/02 ,  H01L29/16 ,  H01L29/66 ,  H01L29/78 ,  H01L29/10 ,  H01L29/72

Abstract: An integrated circuit (IC) device may include a semiconductor structure. The semiconductor structure may include a source contact, a drain contact, and a gate. A first fluorocarbon spacer may be between the gate and the source contact. A second fluorocarbon spacer may be between the gate and the drain contact.

公开(公告)号：US10263080B2

公开(公告)日：2019-04-16

申请号：US15672017

申请日：2017-08-08

Applicant: QUALCOMM Incorporated

Inventor： Ye Lu ,  Junjing Bao ,  Bin Yang ,  Lixin Ge ,  Yun Yue

IPC: H01L29/66 ,  H01L29/16 ,  H01L21/02 ,  H01L29/10 ,  H01L29/72 ,  H01L29/78

Abstract: An integrated circuit (IC) device may include a semiconductor structure. The semiconductor structure may include a source contact, a drain contact, and a gate. A first fluorocarbon spacer may be between the gate and the source contact. A second fluorocarbon spacer may be between the gate and the drain contact.