公开(公告)号：US11328743B2

公开(公告)日：2022-05-10

申请号：US17040645

申请日：2019-02-26

Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Tomoya Nakatani ,  Taisuke Sasaki ,  Takao Furubayashi ,  Kazuhiro Hono

IPC: G11B5/39 ,  G01R33/09 ,  G11B5/02 ,  G11B5/127 ,  G11B5/706 ,  G11C11/16 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  G11B5/31 ,  H01L43/12

Abstract: Provided is a precursor of a current-perpendicular-to-plane giant magnetoresistive element having a laminated structure of ferromagnetic metal layer/nonmagnetic metal layer/ferromagnetic metal layer, the precursor having a nonmagnetic intermediate layer containing a non-magnetic metal and an oxide in a predetermined ratio such that the distribution thereof is nearly uniform at the atomic level. Also provided is a current-perpendicular-to-plane giant magnetoresistive element having a current-confinement structure (CCP) which has: a current confinement structure region made of a conductive alloy and obtained by heat-treating a laminated structure of a ferromagnetic metal layer and a nonmagnetic intermediate layer at a predetermined temperature; and a high-resistance metal alloy region containing an oxide and surrounding the current confinement structure region.

公开(公告)号：US10832719B2

公开(公告)日：2020-11-10

申请号：US16214375

申请日：2018-12-10

Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Hiroaki Sukegawa ,  Zhenchao Wen ,  Seiji Mitani ,  Koichiro Inomata ,  Takao Furubayashi ,  Jason Paul Hadorn ,  Tadakatsu Ohkubo ,  Kazuhiro Hono ,  Jungwoo Koo

IPC: G11B5/65 ,  G11B5/73 ,  G11B5/84 ,  H01F10/32 ,  G11B5/39 ,  G11C11/16 ,  G11B5/851 ,  H01F10/12 ,  G11B5/66 ,  H01F10/30

Abstract: Disclosed is a perpendicularly magnetized film structure using a highly heat resistant underlayer film on which a cubic or tetragonal perpendicularly magnetized film can grow, comprising a substrate of a cubic single crystal substrate having a (001) plane or a substrate having a cubic oriented film that grows to have the (001) plane; an underlayer formed on the substrate from a thin film of a metal having an hcp structure in which the [0001] direction of the thin metal film forms an angle in the range of 42° to 54° with respect to the direction or the (001) orientation of the substrate; and a perpendicularly magnetized layer located on the metal underlayer and formed from a cubic material selected from a Co-based Heusler alloy and a cobalt-iron (CoFe) alloy having a bcc structure a constituent material, and grown to have the (001) plane.

公开(公告)号：US09336937B2

公开(公告)日：2016-05-10

申请号：US13935095

申请日：2013-07-03

Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Yukiko Takahashi ,  Srinivasan Ananthakrishnan ,  Varaprasad Bollapragada ,  Rajanikanth Ammanabrolu ,  Jaivardhan Sinha ,  Masamitsu Hayashi ,  Takao Furubayashi ,  Shinya Kasai ,  Shigeyuki Hirayama ,  Seiji Mitani ,  Kazuhiro Hono

IPC: H01F10/32 ,  H01F10/16 ,  C22C19/07 ,  G01R33/09 ,  G01R33/12 ,  G11C11/16 ,  H01L43/10 ,  H01F10/193 ,  G11B5/31 ,  G11B5/39 ,  H01L43/08 ,  B82Y10/00 ,  B82Y25/00

CPC classification number: H01F10/16 ,  B82Y10/00 ,  B82Y25/00 ,  C22C19/07 ,  G01R33/093 ,  G01R33/098 ,  G01R33/1284 ,  G11B5/313 ,  G11B5/3906 ,  G11C11/16 ,  G11C11/161 ,  H01F10/1936 ,  H01F10/325 ,  H01F10/329 ,  H01L43/08 ,  H01L43/10 ,  Y10T428/1121 ,  Y10T428/1129 ,  Y10T428/12611

Abstract: To realize a spintronics device with high performance, it is an object of the present invention to provide a Co2Fe-based Heusler alloy having a spin polarization larger than 0.65, and a high performance spintronics devices using the same. A Co2Fe(GaxGe1-x) Heusler alloy shows a spin polarization higher than 0.65 by a PCAR method in a region of 0.25

Abstract translation: 为了实现具有高性能的自旋电子装置，本发明的目的是提供一种具有大于0.65的自旋极化的Co2Fe基Heusler合金和使用其的高性能自旋电子装置。 Co2Fe（GaxGe1-x）Heusler合金在0.25

公开(公告)号：US09899044B2

公开(公告)日：2018-02-20

申请号：US15500713

申请日：2015-07-28

Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Takao Furubayashi ,  Yukiko Takahashi ,  Kazuhiro Hono ,  Ye Du

IPC: G11B5/39 ,  G11B5/40 ,  G11B5/127

CPC classification number: G11B5/3906 ,  G11B5/1278 ,  G11B5/39 ,  G11B5/40 ,  G11B2005/3996 ,  H01L43/08 ,  H01L43/10

Abstract: The present invention addresses the problem of providing an element which uses the current-perpendicular-to-plane giant magnetoresistance (CPPGMR) effect of a thin film having the three-layer structure of ferromagnetic metal/non-magnetic metal/ferromagnetic metal. The problem is solved by a magnetoresistive element provided with a lower ferromagnetic layer and an upper ferromagnetic layer which contain a Heusler alloy, and a spacer layer sandwiched between the lower ferromagnetic layer and the upper ferromagnetic layer, the magnetoresistive element being characterized in that the spacer layer contains an alloy having a bcc structure. Furthermore, it is preferable for the alloy to have a disordered bcc structure.

公开(公告)号：US09589583B1

公开(公告)日：2017-03-07

申请号：US15339094

申请日：2016-10-31

Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Ye Du ,  Takao Furubayashi ,  Yukiko Takahashi ,  Kazuhiro Hono

IPC: G11B5/39

CPC classification number: G11B5/3932 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/09 ,  G11B5/1278 ,  G11B5/39 ,  G11B5/3906 ,  G11B2005/3996 ,  H01L43/08 ,  H01L43/10

Abstract: The CPPGMR element of the present invention has an orientation layer 12 formed on a substrate 11 to texture a Heusler alloy into a (100) direction, an underlying layer 13 that is an electrode for magneto-resistance measurement stacked on the orientation layer 12, a lower ferromagnetic layer 14 and an upper ferromagnetic layer 16 each stacked on the underlying layer 13 and made of a Heusler alloy, a spacer layer 15 sandwiched between the lower ferromagnetic layers 14 and the upper ferromagnetic layers 16, and a cap layer 17 stacked on the upper ferromagnetic layer 16 for surface-protection. This manner makes it possible to provide, inexpensively, an element using a current-perpendicular-to-plane giant magneto-resistance effect (CPPGMR) of a thin film having a trilayered structure of a ferromagnetic metal/a nonmagnetic metal/a ferromagnetic metal, thereby showing excellent performances.

公开(公告)号：US20150132609A1

公开(公告)日：2015-05-14

申请号：US14367348

申请日：2013-03-22

Applicant: National Institute for Materials Science

Inventor： Masamitsu Hayashi ,  Sinha Jaivardhan ,  Masaya Kodzuka ,  Tomoya Nakatani ,  Yukiko Takahashi ,  Takao Furubayashi ,  Seiji Mitani ,  Kazuhiro Hono

IPC: G11B5/65 ,  C23C14/34 ,  G11C11/14 ,  C23C14/06 ,  G01R33/00 ,  G11B5/73 ,  G11B5/851

CPC classification number: G11B5/656 ,  C23C14/024 ,  C23C14/0641 ,  C23C14/081 ,  C23C14/34 ,  C23C14/35 ,  G01R33/00 ,  G01R33/098 ,  G01R33/1284 ,  G11B5/64 ,  G11B5/732 ,  G11B5/851 ,  G11C11/14 ,  G11C11/161 ,  H01F10/007 ,  H01F10/30 ,  H01F10/3286 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: Provided are an element structure in which a magnetic layer has a high magnetic anisotropy constant and saturated magnetization properties in a thickness of 1.5 nm or less, and a magnetic device that uses the element structure. A BCC metal nitride/CoFeB/MgO film structure that uses a nitride of a BCC metal as a seed layer is fabricated. The nitride amount in the BCC metal nitride is preferably less than 60% in terms of volume ratio based on 100% BCC metal. It is thereby possible to readily obtain a perpendicularly magnetized film having the magnetic properties that the perpendicular magnetic anisotropy is 0.1×106 erg/cm3 or more and the saturated magnetization is 200 emu/cm3 or more, even when the thickness of the magnetic layer is 0.3 nm or more and 1.5 nm or less.

Abstract translation: 提供一种其中磁性层具有高的磁各向异性常数和1.5nm以下的厚度的饱和磁化特性的元件结构，以及使用元件结构的磁性器件。 制造使用BCC金属的氮化物作为种子层的BCC金属氮化物/ CoFeB / MgO膜结构。 BCC金属氮化物中的氮化物量优选以基于100％BCC金属的体积比计小于60％。 因此，即使磁性层的厚度为（μm），也可以容易地得到垂直磁各向异性为0.1×10 6Ω/ cm 3以上且磁饱和磁化强度为200emu / cm 3以上的磁特性的垂直磁化膜 0.3nm以上且1.5nm以下。

公开(公告)号：US20130302649A1

公开(公告)日：2013-11-14

申请号：US13935095

申请日：2013-07-03

Applicant: National Institute for Materials Science

Inventor： Yukiko Takahashi ,  Srinivasan Ananthakrishnan ,  Varaprasad Bollapragada ,  Rajanikanth Ammanabrolu ,  Jaivardhan Sinha ,  Masamitsu Hayashi ,  Takao Furubayashi ,  Shinya Kasai ,  Shigeyuki Hirayama ,  Seiji Mitani ,  Kazuhiro Hono

IPC: H01F10/16 ,  G11B5/31 ,  C22C19/07 ,  G11B5/39

CPC classification number: H01F10/16 ,  B82Y10/00 ,  B82Y25/00 ,  C22C19/07 ,  G01R33/093 ,  G01R33/098 ,  G01R33/1284 ,  G11B5/313 ,  G11B5/3906 ,  G11C11/16 ,  G11C11/161 ,  H01F10/1936 ,  H01F10/325 ,  H01F10/329 ,  H01L43/08 ,  H01L43/10 ,  Y10T428/1121 ,  Y10T428/1129 ,  Y10T428/12611

Abstract: [Problem to be Solved]To realize a spintronics device with high performance, it is an object of the present invention to provide a Co2Fe-based Heusler alloy having a spin polarization larger than 0.65, and a high performance spintronics devices using the same.[Solution]A Co2Fe(GaxGe1-x) Heusler alloy shows a spin polarization higher than 0.65 by a PCAR method in a region of 0.25

Abstract translation: [待解决的问题]为了实现具有高性能的自旋电子装置，本发明的目的是提供具有大于0.65的自旋极化的Co2Fe基Heusler合金和使用其的高性能自旋电子装置。 [溶液] Co2Fe（GaxGe1-x）Heusler合金在0.25

公开(公告)号：US10199063B2

公开(公告)日：2019-02-05

申请号：US15127527

申请日：2015-03-19

Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Hiroaki Sukegawa ,  Zhenchao Wen ,  Seiji Mitani ,  Koichiro Inomata ,  Takao Furubayashi ,  Jason Paul Hadorn ,  Tadakatsu Ohkubo ,  Kazuhiro Hono ,  Jungwoo Koo

IPC: G11B5/65 ,  G11B5/73 ,  G11B5/84 ,  G11B5/851 ,  G11B5/66 ,  H01F10/30 ,  H01F10/32 ,  G11B5/39 ,  G11C11/16 ,  H01F10/12

Abstract: Disclosed is a perpendicularly magnetized film structure that uses a highly heat resistant underlayer film on which a cubic or tetragonal perpendicularly magnetized film can grow with high quality, the structure comprising any one substrate (5) of a cubic single crystal substrate having a (001) plane, or a substrate having a cubic oriented film that grows to have the (001) plane; an underlayer (6) formed on the substrate (5) from a thin film of a metal having an hcp structure, such as Ru or Re, in which the [0001] direction of the thin metal film forms an angle in the range of 42° to 54° with respect to the direction or the (001) orientation of the substrate (5); and a perpendicularly magnetized layer (7) located on the metal underlayer (6) and formed from a cubic material selected from the group consisting of a Co-based Heusler alloy, a cobalt-iron (CoFe) alloy having a bcc structure, and the like, as a constituent material, and grown to have the (001) plane.

公开(公告)号：US09558767B2

公开(公告)日：2017-01-31

申请号：US14774987

申请日：2014-04-02

Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Ye Du ,  Takao Furubayashi ,  Yukiko Takahashi ,  Kazuhiro Hono

IPC: G11B5/127 ,  G11B5/39 ,  H01L43/08 ,  H01L43/10 ,  B82Y10/00 ,  G01R33/09 ,  G11B5/09

CPC classification number: G11B5/3932 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/09 ,  G11B5/1278 ,  G11B5/39 ,  G11B5/3906 ,  G11B2005/3996 ,  H01L43/08 ,  H01L43/10

Abstract: The CPPGMR element of the present invention has an orientation layer 12 formed on a substrate 11 to texture a Heusler alloy into a (100) direction, an underlying layer 13 that is an electrode for magneto-resistance measurement stacked on the orientation layer 12, a lower ferromagnetic layer 14 and an upper ferromagnetic layer 16 each stacked on the underlying layer 13 and made of a Heusler alloy, a spacer layer 15 sandwiched between the lower ferromagnetic layers 14 and the upper ferromagnetic layers 16, and a cap layer 17 stacked on the upper ferromagnetic layer 16 for surface-protection. This manner makes it possible to provide, inexpensively, an element using a current-perpendicular-to-plane giant magneto-resistance effect (CPPGMR) of a thin film having a trilayered structure of a ferromagnetic metal/a nonmagnetic metal/a ferromagnetic metal, thereby showing excellent performances.

Abstract translation: 本发明的CPPGMR元件具有形成在基板11上以将Heusler合金构造成（100）方向的取向层12，作为层叠在取向层12上的用于磁电阻测量的电极的下层13， 每个层叠在下层13上并由Heusler合金制成的下铁磁层14和上铁磁层16，夹在下铁磁层14和上铁磁层16之间的间隔层15和堆叠在其上的盖层17 用于表面保护的上铁磁层16。 这种方式使得可以廉价地提供使用具有铁磁金属/非磁性金属/铁磁性金属的三层结构的薄膜的电流 - 垂直于平面的巨磁阻效应（CPPGMR）的元件， 从而表现出优异的表现。

公开(公告)号：US09508373B2

公开(公告)日：2016-11-29

申请号：US14367348

申请日：2013-03-22

Applicant: National Institute for Materials Science

Inventor： Masamitsu Hayashi ,  Sinha Jaivardhan ,  Masaya Kodzuka ,  Tomoya Nakatani ,  Yukiko Takahashi ,  Takao Furubayashi ,  Seiji Mitani ,  Kazuhiro Hono

IPC: G11C11/16 ,  G11B5/66 ,  G11B5/65 ,  G11B5/64 ,  G11B5/73 ,  G11B5/851 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  H01F10/30 ,  H01F10/32 ,  C23C14/06 ,  C23C14/34 ,  G01R33/00 ,  G11C11/14 ,  G01R33/09 ,  G01R33/12 ,  H01F10/00

CPC classification number: G11B5/656 ,  C23C14/024 ,  C23C14/0641 ,  C23C14/081 ,  C23C14/34 ,  C23C14/35 ,  G01R33/00 ,  G01R33/098 ,  G01R33/1284 ,  G11B5/64 ,  G11B5/732 ,  G11B5/851 ,  G11C11/14 ,  G11C11/161 ,  H01F10/007 ,  H01F10/30 ,  H01F10/3286 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: Provided are an element structure in which a magnetic layer has a high magnetic anisotropy constant and saturated magnetization properties in a thickness of 1.5 nm or less, and a magnetic device that uses the element structure. A BCC metal nitride/CoFeB/MgO film structure that uses a nitride of a BCC metal as a seed layer is fabricated. The nitride amount in the BCC metal nitride is preferably less than 60% in terms of volume ratio based on 100% BCC metal. It is thereby possible to readily obtain a perpendicularly magnetized film having the magnetic properties that the perpendicular magnetic anisotropy is 0.1×106 erg/cm3 or more and the saturated magnetization is 200 emu/cm3 or more, even when the thickness of the magnetic layer is 0.3 nm or more and 1.5 nm or less.

Abstract translation: 提供一种其中磁性层具有高的磁各向异性常数和1.5nm以下的厚度的饱和磁化特性的元件结构，以及使用元件结构的磁性器件。 制造使用BCC金属的氮化物作为种子层的BCC金属氮化物/ CoFeB / MgO膜结构。 BCC金属氮化物中的氮化物量优选以基于100％BCC金属的体积比计小于60％。 因此，即使磁性层的厚度为（μm），也可以容易地得到垂直磁各向异性为0.1×10 6Ω/ cm 3以上且磁饱和磁化强度为200emu / cm 3以上的磁特性的垂直磁化膜 0.3nm以上且1.5nm以下。