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1.发明申请公开(公告)号：US20150132609A1
公开(公告)日：2015-05-14
申请号：US14367348
申请日：2013-03-22
Applicant: National Institute for Materials Science
Inventor： Masamitsu Hayashi , Sinha Jaivardhan , Masaya Kodzuka , Tomoya Nakatani , Yukiko Takahashi , Takao Furubayashi , Seiji Mitani , Kazuhiro Hono
CPC classification number: G11B5/656 , C23C14/024 , C23C14/0641 , C23C14/081 , C23C14/34 , C23C14/35 , G01R33/00 , G01R33/098 , G01R33/1284 , G11B5/64 , G11B5/732 , G11B5/851 , G11C11/14 , G11C11/161 , H01F10/007 , H01F10/30 , H01F10/3286 , H01L43/08 , H01L43/10 , H01L43/12
Abstract: Provided are an element structure in which a magnetic layer has a high magnetic anisotropy constant and saturated magnetization properties in a thickness of 1.5 nm or less, and a magnetic device that uses the element structure. A BCC metal nitride/CoFeB/MgO film structure that uses a nitride of a BCC metal as a seed layer is fabricated. The nitride amount in the BCC metal nitride is preferably less than 60% in terms of volume ratio based on 100% BCC metal. It is thereby possible to readily obtain a perpendicularly magnetized film having the magnetic properties that the perpendicular magnetic anisotropy is 0.1×106 erg/cm3 or more and the saturated magnetization is 200 emu/cm3 or more, even when the thickness of the magnetic layer is 0.3 nm or more and 1.5 nm or less.
Abstract translation: 提供一种其中磁性层具有高的磁各向异性常数和1.5nm以下的厚度的饱和磁化特性的元件结构，以及使用元件结构的磁性器件。 制造使用BCC金属的氮化物作为种子层的BCC金属氮化物/ CoFeB / MgO膜结构。 BCC金属氮化物中的氮化物量优选以基于100％BCC金属的体积比计小于60％。 因此，即使磁性层的厚度为（μm），也可以容易地得到垂直磁各向异性为0.1×10 6Ω/ cm 3以上且磁饱和磁化强度为200emu / cm 3以上的磁特性的垂直磁化膜 0.3nm以上且1.5nm以下。
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公开(公告)号：US20130302649A1
公开(公告)日：2013-11-14
申请号：US13935095
申请日：2013-07-03
Applicant: National Institute for Materials Science
Inventor： Yukiko Takahashi , Srinivasan Ananthakrishnan , Varaprasad Bollapragada , Rajanikanth Ammanabrolu , Jaivardhan Sinha , Masamitsu Hayashi , Takao Furubayashi , Shinya Kasai , Shigeyuki Hirayama , Seiji Mitani , Kazuhiro Hono
CPC classification number: H01F10/16 , B82Y10/00 , B82Y25/00 , C22C19/07 , G01R33/093 , G01R33/098 , G01R33/1284 , G11B5/313 , G11B5/3906 , G11C11/16 , G11C11/161 , H01F10/1936 , H01F10/325 , H01F10/329 , H01L43/08 , H01L43/10 , Y10T428/1121 , Y10T428/1129 , Y10T428/12611
Abstract: [Problem to be Solved]To realize a spintronics device with high performance, it is an object of the present invention to provide a Co2Fe-based Heusler alloy having a spin polarization larger than 0.65, and a high performance spintronics devices using the same.[Solution]A Co2Fe(GaxGe1-x) Heusler alloy shows a spin polarization higher than 0.65 by a PCAR method in a region of 0.25
Abstract translation: [待解决的问题]为了实现具有高性能的自旋电子装置，本发明的目的是提供具有大于0.65的自旋极化的Co2Fe基Heusler合金和使用其的高性能自旋电子装置。 [溶液] Co2Fe（GaxGe1-x）Heusler合金在0.25
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公开(公告)号：US11374168B2
公开(公告)日：2022-06-28
申请号：US16640429
申请日：2018-08-29
Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE
Inventor： Hiroaki Sukegawa , Thomas Scheike , Seiji Mitani
Abstract: The present invention provides a perpendicularly magnetized film structure exhibiting high interface-induced magnetic anisotropy by utilizing a combination of an alloy comprising Fe as a main component and MgAl2O4 as a basic configuration.
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公开(公告)号：US10199063B2
公开(公告)日：2019-02-05
申请号：US15127527
申请日：2015-03-19
Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE
Inventor： Hiroaki Sukegawa , Zhenchao Wen , Seiji Mitani , Koichiro Inomata , Takao Furubayashi , Jason Paul Hadorn , Tadakatsu Ohkubo , Kazuhiro Hono , Jungwoo Koo
IPC: G11B5/65 , G11B5/73 , G11B5/84 , G11B5/851 , G11B5/66 , H01F10/30 , H01F10/32 , G11B5/39 , G11C11/16 , H01F10/12
Abstract: Disclosed is a perpendicularly magnetized film structure that uses a highly heat resistant underlayer film on which a cubic or tetragonal perpendicularly magnetized film can grow with high quality, the structure comprising any one substrate (5) of a cubic single crystal substrate having a (001) plane, or a substrate having a cubic oriented film that grows to have the (001) plane; an underlayer (6) formed on the substrate (5) from a thin film of a metal having an hcp structure, such as Ru or Re, in which the [0001] direction of the thin metal film forms an angle in the range of 42° to 54° with respect to the direction or the (001) orientation of the substrate (5); and a perpendicularly magnetized layer (7) located on the metal underlayer (6) and formed from a cubic material selected from the group consisting of a Co-based Heusler alloy, a cobalt-iron (CoFe) alloy having a bcc structure, and the like, as a constituent material, and grown to have the (001) plane.
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公开(公告)号：US09842636B2
公开(公告)日：2017-12-12
申请号：US15134514
申请日：2016-04-21
Inventor： Hiroaki Sukegawa , Hwachol Lee , Kazuhiro Hono , Seiji Mitani , Tadakatsu Ohkubo , Jun Liu , Shinya Kasai , Kwangseok Kim
CPC classification number: G11C11/161 , H01F10/1933 , H01F10/3286 , H01L43/02 , H01L43/08 , H01L43/10 , H01L43/12
Abstract: Provided is a structure having a perpendicular magnetization film which is an (Mn1-xGax)4N1-y (0
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Patent Agency Ranking
6.发明授权公开(公告)号：US09508373B2
公开(公告)日：2016-11-29
申请号：US14367348
申请日：2013-03-22
Applicant: National Institute for Materials Science
Inventor： Masamitsu Hayashi , Sinha Jaivardhan , Masaya Kodzuka , Tomoya Nakatani , Yukiko Takahashi , Takao Furubayashi , Seiji Mitani , Kazuhiro Hono
IPC: G11C11/16 , G11B5/66 , G11B5/65 , G11B5/64 , G11B5/73 , G11B5/851 , H01L43/08 , H01L43/10 , H01L43/12 , H01F10/30 , H01F10/32 , C23C14/06 , C23C14/34 , G01R33/00 , G11C11/14 , G01R33/09 , G01R33/12 , H01F10/00
CPC classification number: G11B5/656 , C23C14/024 , C23C14/0641 , C23C14/081 , C23C14/34 , C23C14/35 , G01R33/00 , G01R33/098 , G01R33/1284 , G11B5/64 , G11B5/732 , G11B5/851 , G11C11/14 , G11C11/161 , H01F10/007 , H01F10/30 , H01F10/3286 , H01L43/08 , H01L43/10 , H01L43/12
Abstract: Provided are an element structure in which a magnetic layer has a high magnetic anisotropy constant and saturated magnetization properties in a thickness of 1.5 nm or less, and a magnetic device that uses the element structure. A BCC metal nitride/CoFeB/MgO film structure that uses a nitride of a BCC metal as a seed layer is fabricated. The nitride amount in the BCC metal nitride is preferably less than 60% in terms of volume ratio based on 100% BCC metal. It is thereby possible to readily obtain a perpendicularly magnetized film having the magnetic properties that the perpendicular magnetic anisotropy is 0.1×106 erg/cm3 or more and the saturated magnetization is 200 emu/cm3 or more, even when the thickness of the magnetic layer is 0.3 nm or more and 1.5 nm or less.
Abstract translation: 提供一种其中磁性层具有高的磁各向异性常数和1.5nm以下的厚度的饱和磁化特性的元件结构，以及使用元件结构的磁性器件。 制造使用BCC金属的氮化物作为种子层的BCC金属氮化物/ CoFeB / MgO膜结构。 BCC金属氮化物中的氮化物量优选以基于100％BCC金属的体积比计小于60％。 因此，即使磁性层的厚度为（μm），也可以容易地得到垂直磁各向异性为0.1×10 6Ω/ cm 3以上且磁饱和磁化强度为200emu / cm 3以上的磁特性的垂直磁化膜 0.3nm以上且1.5nm以下。
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公开(公告)号：US10395809B2
公开(公告)日：2019-08-27
申请号：US15591348
申请日：2017-05-10
Inventor： Shigeki Takahashi , Yoshiaki Sonobe , Hiroaki Sukegawa , Hwachol Lee , Kazuhiro Hono , Seiji Mitani , Jun Liu
Abstract: Embodiments of the inventive concepts provide a flat perpendicular magnetic layer having a low saturation magnetization and a perpendicular magnetization-type tunnel magnetoresistive element using the same. The perpendicular magnetic layer is a nitrogen-poor (Mn1−xGax)Ny layer (0
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公开(公告)号：US10305027B2
公开(公告)日：2019-05-28
申请号：US15699749
申请日：2017-09-08
Inventor： Yushi Kato , Tadaomi Daibou , Yuuzo Kamiguchi , Naoharu Shimomura , Junichi Ito , Hiroaki Sukegawa , Mohamed Belmoubarik , Po-Han Cheng , Seiji Mitani , Tadakatsu Ohkubo , Kazuhiro Hono
Abstract: According to one embodiment, a magnetoresistive element includes a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer. The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer. The first nonmagnetic layer includes an oxide including an inverse-spinel structure.
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9.发明授权公开(公告)号：US11585873B2
公开(公告)日：2023-02-21
申请号：US17370613
申请日：2021-07-08
Applicant: TDK CORPORATION , NATIONAL INSTITUTE FOR MATERIALS SCIENCE
Inventor： Shinto Ichikawa , Katsuyuki Nakada , Hiroaki Sukegawa , Seiji Mitani , Tadakatsu Ohkubo , Kazuhiro Hono
Abstract: A magnetoresistive effect element includes: a first ferromagnetic layer; a second ferromagnetic layer; and a non-magnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer, wherein the non-magnetic layer includes a first layer and a second layer, and wherein a lattice constant α of the first layer and a lattice constant β of the second layer satisfy a relationship of β−0.04×α≤2×α≤β+0.04×α.
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10.发明授权Ferromagnetic tunnel junction structure and magnetoresistive effect device and spintronics device utilizing same 有权铁磁隧道结结构和磁阻效应器件和利用其的自旋电子器件公开(公告)号：US08872291B2
公开(公告)日：2014-10-28
申请号：US13627664
申请日：2012-09-26
Applicant: National Institute for Materials Science
Inventor： Hiroaki Sukegawa , Seiji Mitani , Tomohiko Niizeki , Tadakatsu Ohkubo , Kouichiro Inomata , Kazuhiro Hono , Masafumi Shirai , Yoshio Miura , Kazutaka Abe , Shingo Muramoto
CPC classification number: H01L43/10 , H01L27/228 , H01L43/08
Abstract: A ferromagnetic tunnel junction structure comprising a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer that is interposed between the first ferromagnetic layer and the second ferromagnetic layer, wherein the tunnel barrier layer includes a crystalline non-magnetic material having constituent elements that are similar to those of an crystalline oxide that has spinel structure as a stable phase structure; the non-magnetic material has a cubic structure having a symmetry of space group Fm-3m or F-43m in which atomic arrangement in the spinel structure is disordered; and an effective lattice constant of the cubic structure is substantially half of the lattice constant of the oxide of the spinel structure.
Abstract translation: 铁磁隧道结结构，其包括介于第一铁磁层和第二铁磁层之间的第一铁磁层，第二铁磁层和隧道势垒层，其中隧道势垒层包括具有构成元素的结晶非磁性材料 类似于具有尖晶石结构作为稳定相结构的结晶氧化物的那些; 非磁性材料具有空间群Fm-3m或F-43m对称的立方结构，其中尖晶石结构中的原子排列紊乱; 并且立方结构的有效晶格常数大致是尖晶石结构的氧化物的晶格常数的一半。
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