公开(公告)号：US12293893B2

公开(公告)日：2025-05-06

申请号：US18294251

申请日：2022-06-23

Applicant: Denka Company Limited ,  NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Hiromitsu Chatani ,  Daisuke Ishikawa ,  Jie Tang ,  Tadakatsu Ohkubo ,  Shuai Tang ,  Jun Uzuhashi ,  Kazuhiro Hono

IPC: H01J1/02 ,  H01J9/02 ,  H01J37/06

Abstract: A manufacturing method for an electron source according to the present disclosure includes steps of: (A) cutting out a chip from a block of an electron emission material, (B) fixing a first end portion of the chip to a distal end of a support needle, and (C) sharpening a second end portion of the chip. The step (A) includes forming first and second grooves which constitute first and second surfaces of the chip in the block by irradiating a surface of the block with an ion beam. The first end portion of the chip includes the first surface and the second surface with the surfaces forming an angle α of 10 to 90°. The step (B) includes forming a joint between the distal end of the support needle and the first end portion of the chip.

公开(公告)号：US10199063B2

公开(公告)日：2019-02-05

申请号：US15127527

申请日：2015-03-19

Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Hiroaki Sukegawa ,  Zhenchao Wen ,  Seiji Mitani ,  Koichiro Inomata ,  Takao Furubayashi ,  Jason Paul Hadorn ,  Tadakatsu Ohkubo ,  Kazuhiro Hono ,  Jungwoo Koo

IPC: G11B5/65 ,  G11B5/73 ,  G11B5/84 ,  G11B5/851 ,  G11B5/66 ,  H01F10/30 ,  H01F10/32 ,  G11B5/39 ,  G11C11/16 ,  H01F10/12

Abstract: Disclosed is a perpendicularly magnetized film structure that uses a highly heat resistant underlayer film on which a cubic or tetragonal perpendicularly magnetized film can grow with high quality, the structure comprising any one substrate (5) of a cubic single crystal substrate having a (001) plane, or a substrate having a cubic oriented film that grows to have the (001) plane; an underlayer (6) formed on the substrate (5) from a thin film of a metal having an hcp structure, such as Ru or Re, in which the [0001] direction of the thin metal film forms an angle in the range of 42° to 54° with respect to the direction or the (001) orientation of the substrate (5); and a perpendicularly magnetized layer (7) located on the metal underlayer (6) and formed from a cubic material selected from the group consisting of a Co-based Heusler alloy, a cobalt-iron (CoFe) alloy having a bcc structure, and the like, as a constituent material, and grown to have the (001) plane.

公开(公告)号：US09842636B2

公开(公告)日：2017-12-12

申请号：US15134514

申请日：2016-04-21

Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE ,  SAMSUNG ELECTRONICS COMPANY LIMITED

Inventor： Hiroaki Sukegawa ,  Hwachol Lee ,  Kazuhiro Hono ,  Seiji Mitani ,  Tadakatsu Ohkubo ,  Jun Liu ,  Shinya Kasai ,  Kwangseok Kim

IPC: G11C11/16 ,  H01F10/193 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

CPC classification number: G11C11/161 ,  H01F10/1933 ,  H01F10/3286 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: Provided is a structure having a perpendicular magnetization film which is an (Mn1-xGax)4N1-y (0

公开(公告)号：US11915920B2

公开(公告)日：2024-02-27

申请号：US17768017

申请日：2020-10-20

Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Jie Tang ,  Shuai Tang ,  Ta-Wei Chiu ,  Tadakatsu Ohkubo ,  Jun Uzuhashi ,  Kazuhiro Hono ,  Luchang Qin

IPC: H01J9/02 ,  H01J1/02 ,  H01J37/30

CPC classification number: H01J9/02 ,  H01J1/02 ,  H01J37/30

Abstract: The present invention provides a simpler method for sharpening a tip of an emitter. In addition, the present invention provides an emitter including a nanoneedle made of a single crystal material, an emitter including a nanowire made of a single crystal material such as hafnium carbide (HfC), both of which stably emit electrons with high efficiency, and an electron gun and an electronic device using any one of these emitters. A method for manufacturing the emitter according to an embodiment of the present invention comprises processing a single crystal material in a vacuum using a focused ion beam to form an end of the single crystal material, through which electrons are to be emitted, into a tapered shape, wherein the processing is performed in an environment in which a periphery of the single crystal material fixed to a support is opened.

公开(公告)号：US10305027B2

公开(公告)日：2019-05-28

申请号：US15699749

申请日：2017-09-08

Applicant: Kabushiki Kaisha Toshiba ,  NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Yushi Kato ,  Tadaomi Daibou ,  Yuuzo Kamiguchi ,  Naoharu Shimomura ,  Junichi Ito ,  Hiroaki Sukegawa ,  Mohamed Belmoubarik ,  Po-Han Cheng ,  Seiji Mitani ,  Tadakatsu Ohkubo ,  Kazuhiro Hono

IPC: H01L27/22 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: According to one embodiment, a magnetoresistive element includes a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer. The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer. The first nonmagnetic layer includes an oxide including an inverse-spinel structure.

公开(公告)号：US11585873B2

公开(公告)日：2023-02-21

申请号：US17370613

申请日：2021-07-08

Applicant: TDK CORPORATION ,  NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Shinto Ichikawa ,  Katsuyuki Nakada ,  Hiroaki Sukegawa ,  Seiji Mitani ,  Tadakatsu Ohkubo ,  Kazuhiro Hono

IPC: G01R33/09 ,  G11B5/39 ,  H01L43/10 ,  G11C11/16 ,  H01L43/02 ,  H01L43/08

Abstract: A magnetoresistive effect element includes: a first ferromagnetic layer; a second ferromagnetic layer; and a non-magnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer, wherein the non-magnetic layer includes a first layer and a second layer, and wherein a lattice constant α of the first layer and a lattice constant β of the second layer satisfy a relationship of β−0.04×α≤2×α≤β+0.04×α.

公开(公告)号：US20230049280A1

公开(公告)日：2023-02-16

申请号：US17788964

申请日：2020-12-22

Applicant: TOHOKU MAGNET INSTITUTE CO., LTD. ,  NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Tatsuya Tomita ,  Yohei Nomura ,  Jun Uzuhashi ,  Tadakatsu Ohkubo ,  Kazuhiro Hono

IPC: C22C38/16

Abstract: The present invention is an alloy that contains Fe, B, P, and Cu, and includes a non-crystalline phase and a plurality of crystalline phases formed in the non-crystalline, wherein an average Fe concentration in a whole alloy is 79 atomic % or greater, and wherein a density of Cu clusters when a region with a Cu concentration of 6.0 atomic % or greater among regions with 1.0 nm on a side in atom probe tomography is determined to be a Cu cluster is 0.20×1024/m3.

公开(公告)号：US08872291B2

公开(公告)日：2014-10-28

申请号：US13627664

申请日：2012-09-26

Applicant: National Institute for Materials Science

Inventor： Hiroaki Sukegawa ,  Seiji Mitani ,  Tomohiko Niizeki ,  Tadakatsu Ohkubo ,  Kouichiro Inomata ,  Kazuhiro Hono ,  Masafumi Shirai ,  Yoshio Miura ,  Kazutaka Abe ,  Shingo Muramoto

IPC: H01L29/82 ,  H01L43/10 ,  H01L27/22

CPC classification number: H01L43/10 ,  H01L27/228 ,  H01L43/08

Abstract: A ferromagnetic tunnel junction structure comprising a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer that is interposed between the first ferromagnetic layer and the second ferromagnetic layer, wherein the tunnel barrier layer includes a crystalline non-magnetic material having constituent elements that are similar to those of an crystalline oxide that has spinel structure as a stable phase structure; the non-magnetic material has a cubic structure having a symmetry of space group Fm-3m or F-43m in which atomic arrangement in the spinel structure is disordered; and an effective lattice constant of the cubic structure is substantially half of the lattice constant of the oxide of the spinel structure.

Abstract translation: 铁磁隧道结结构，其包括介于第一铁磁层和第二铁磁层之间的第一铁磁层，第二铁磁层和隧道势垒层，其中隧道势垒层包括具有构成元素的结晶非磁性材料 类似于具有尖晶石结构作为稳定相结构的结晶氧化物的那些; 非磁性材料具有空间群Fm-3m或F-43m对称的立方结构，其中尖晶石结构中的原子排列紊乱; 并且立方结构的有效晶格常数大致是尖晶石结构的氧化物的晶格常数的一半。

公开(公告)号：US20130221461A1

公开(公告)日：2013-08-29

申请号：US13627664

申请日：2012-09-26

Applicant: National Institute for Materials Science

Inventor： Hiroaki Sukegawa ,  Seiji Mitani ,  Tomohiko Niizeki ,  Tadakatsu Ohkubo ,  Kouichiro Inomata ,  Kazuhiro Hono ,  Masafumi Shirai ,  Yoshio Miura ,  Kazutaka Abe ,  Shingo Muramoto

IPC: H01L29/82

CPC classification number: H01L43/10 ,  H01L27/228 ,  H01L43/08

Abstract: A ferromagnetic tunnel junction structure comprising a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer that is interposed between the first ferromagnetic layer and the second ferromagnetic layer, wherein the tunnel barrier layer includes a crystalline non-magnetic material having constituent elements that are similar to those of an crystalline oxide that has spinel structure as a stable phase structure; the non-magnetic material has a cubic structure having a symmetry of space group Fm-3m or F-43m in which atomic arrangement in the spinel structure is disordered; and an effective lattice constant of the cubic structure is substantially half of the lattice constant of the oxide of the spinel structure.

Abstract translation: 铁磁隧道结结构，其包括介于第一铁磁层和第二铁磁层之间的第一铁磁层，第二铁磁层和隧道势垒层，其中隧道势垒层包括具有构成元素的结晶非磁性材料 类似于具有尖晶石结构作为稳定相结构的结晶氧化物的那些; 非磁性材料具有空间群Fm-3m或F-43m对称的立方结构，其中尖晶石结构中的原子排列紊乱; 并且立方结构的有效晶格常数大致是尖晶石结构的氧化物的晶格常数的一半。

公开(公告)号：US11133459B2

公开(公告)日：2021-09-28

申请号：US16498936

申请日：2018-02-15

Applicant: National Institute of Advanced Industrial Science and Technology ,  TOHOKU UNIVERSITY ,  NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Takayuki Nozaki ,  Shinji Yuasa ,  Rachwal Anna Koziol ,  Masahito Tsujikawa ,  Masafumi Shirai ,  Kazuhiro Hono ,  Tadakatsu Ohkubo ,  Xiandong Xu

IPC: H01L43/10 ,  H01F10/14 ,  H01F10/30 ,  H01L27/22 ,  H01L29/82

Abstract: According to one embodiment, a magnetic element includes a first layer and a second layer. The first layer includes a first element and a second element. The first element includes at least one selected from the group consisting of Fe, Co, and Ni. The second element includes at least one selected from the group consisting of Ir and Os. The second layer is nonmagnetic.