公开(公告)号：US20150132609A1

公开(公告)日：2015-05-14

申请号：US14367348

申请日：2013-03-22

Applicant: National Institute for Materials Science

Inventor： Masamitsu Hayashi ,  Sinha Jaivardhan ,  Masaya Kodzuka ,  Tomoya Nakatani ,  Yukiko Takahashi ,  Takao Furubayashi ,  Seiji Mitani ,  Kazuhiro Hono

IPC: G11B5/65 ,  C23C14/34 ,  G11C11/14 ,  C23C14/06 ,  G01R33/00 ,  G11B5/73 ,  G11B5/851

CPC classification number: G11B5/656 ,  C23C14/024 ,  C23C14/0641 ,  C23C14/081 ,  C23C14/34 ,  C23C14/35 ,  G01R33/00 ,  G01R33/098 ,  G01R33/1284 ,  G11B5/64 ,  G11B5/732 ,  G11B5/851 ,  G11C11/14 ,  G11C11/161 ,  H01F10/007 ,  H01F10/30 ,  H01F10/3286 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: Provided are an element structure in which a magnetic layer has a high magnetic anisotropy constant and saturated magnetization properties in a thickness of 1.5 nm or less, and a magnetic device that uses the element structure. A BCC metal nitride/CoFeB/MgO film structure that uses a nitride of a BCC metal as a seed layer is fabricated. The nitride amount in the BCC metal nitride is preferably less than 60% in terms of volume ratio based on 100% BCC metal. It is thereby possible to readily obtain a perpendicularly magnetized film having the magnetic properties that the perpendicular magnetic anisotropy is 0.1×106 erg/cm3 or more and the saturated magnetization is 200 emu/cm3 or more, even when the thickness of the magnetic layer is 0.3 nm or more and 1.5 nm or less.

Abstract translation: 提供一种其中磁性层具有高的磁各向异性常数和1.5nm以下的厚度的饱和磁化特性的元件结构，以及使用元件结构的磁性器件。 制造使用BCC金属的氮化物作为种子层的BCC金属氮化物/ CoFeB / MgO膜结构。 BCC金属氮化物中的氮化物量优选以基于100％BCC金属的体积比计小于60％。 因此，即使磁性层的厚度为（μm），也可以容易地得到垂直磁各向异性为0.1×10 6Ω/ cm 3以上且磁饱和磁化强度为200emu / cm 3以上的磁特性的垂直磁化膜 0.3nm以上且1.5nm以下。

公开(公告)号：US11521645B2

公开(公告)日：2022-12-06

申请号：US17295124

申请日：2019-06-27

Applicant: National Institute for Materials Science

Inventor： Kresna Bondan Fathoni ,  Yuya Sakuraba ,  Taisuke Sasaki ,  Tomoya Nakatani ,  Yoshio Miura ,  Kazuhiro Hono

IPC: G11B5/39 ,  H01L43/02 ,  G01R33/09 ,  H01L43/08 ,  H01L43/10

Abstract: The present disclosure provides: a magnetoresistive element having a large magnetoresistance change ratio (MR ratio); and a magnetic sensor, a reproducing head and a magnetic recording and reproducing device. The magnetoresistive element comprises a magnetoresistive film including a pair of body centered cubic (bcc) crystal structure CoFe ferromagnetic layers with a (001) crystal orientation, the pair of layers separated by a non-magnetic layer of Cu with bcc crystal structure.

公开(公告)号：US09508373B2

公开(公告)日：2016-11-29

申请号：US14367348

申请日：2013-03-22

Applicant: National Institute for Materials Science

Inventor： Masamitsu Hayashi ,  Sinha Jaivardhan ,  Masaya Kodzuka ,  Tomoya Nakatani ,  Yukiko Takahashi ,  Takao Furubayashi ,  Seiji Mitani ,  Kazuhiro Hono

IPC: G11C11/16 ,  G11B5/66 ,  G11B5/65 ,  G11B5/64 ,  G11B5/73 ,  G11B5/851 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  H01F10/30 ,  H01F10/32 ,  C23C14/06 ,  C23C14/34 ,  G01R33/00 ,  G11C11/14 ,  G01R33/09 ,  G01R33/12 ,  H01F10/00

CPC classification number: G11B5/656 ,  C23C14/024 ,  C23C14/0641 ,  C23C14/081 ,  C23C14/34 ,  C23C14/35 ,  G01R33/00 ,  G01R33/098 ,  G01R33/1284 ,  G11B5/64 ,  G11B5/732 ,  G11B5/851 ,  G11C11/14 ,  G11C11/161 ,  H01F10/007 ,  H01F10/30 ,  H01F10/3286 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: Provided are an element structure in which a magnetic layer has a high magnetic anisotropy constant and saturated magnetization properties in a thickness of 1.5 nm or less, and a magnetic device that uses the element structure. A BCC metal nitride/CoFeB/MgO film structure that uses a nitride of a BCC metal as a seed layer is fabricated. The nitride amount in the BCC metal nitride is preferably less than 60% in terms of volume ratio based on 100% BCC metal. It is thereby possible to readily obtain a perpendicularly magnetized film having the magnetic properties that the perpendicular magnetic anisotropy is 0.1×106 erg/cm3 or more and the saturated magnetization is 200 emu/cm3 or more, even when the thickness of the magnetic layer is 0.3 nm or more and 1.5 nm or less.

Abstract translation: 提供一种其中磁性层具有高的磁各向异性常数和1.5nm以下的厚度的饱和磁化特性的元件结构，以及使用元件结构的磁性器件。 制造使用BCC金属的氮化物作为种子层的BCC金属氮化物/ CoFeB / MgO膜结构。 BCC金属氮化物中的氮化物量优选以基于100％BCC金属的体积比计小于60％。 因此，即使磁性层的厚度为（μm），也可以容易地得到垂直磁各向异性为0.1×10 6Ω/ cm 3以上且磁饱和磁化强度为200emu / cm 3以上的磁特性的垂直磁化膜 0.3nm以上且1.5nm以下。

公开(公告)号：US11328743B2

公开(公告)日：2022-05-10

申请号：US17040645

申请日：2019-02-26

Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Tomoya Nakatani ,  Taisuke Sasaki ,  Takao Furubayashi ,  Kazuhiro Hono

IPC: G11B5/39 ,  G01R33/09 ,  G11B5/02 ,  G11B5/127 ,  G11B5/706 ,  G11C11/16 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  G11B5/31 ,  H01L43/12

Abstract: Provided is a precursor of a current-perpendicular-to-plane giant magnetoresistive element having a laminated structure of ferromagnetic metal layer/nonmagnetic metal layer/ferromagnetic metal layer, the precursor having a nonmagnetic intermediate layer containing a non-magnetic metal and an oxide in a predetermined ratio such that the distribution thereof is nearly uniform at the atomic level. Also provided is a current-perpendicular-to-plane giant magnetoresistive element having a current-confinement structure (CCP) which has: a current confinement structure region made of a conductive alloy and obtained by heat-treating a laminated structure of a ferromagnetic metal layer and a nonmagnetic intermediate layer at a predetermined temperature; and a high-resistance metal alloy region containing an oxide and surrounding the current confinement structure region.