Abstract:
A fluorescent labeling substance that is capable of realizing highly appropriate labeling through enhancing of the luminous efficiency of semiconductor nanoparticles or nanorods. The fluorescent labeling substance can be provided by disposing on a surface of shell of nanorods or nanoparticles having a modification group capable of adsorption with a biosubstance, such as protein, nucleic acid or antibody, a region devoid of the above modification group.
Abstract:
A semiconductor nanoparticle and semiconductor nanorod that have optical characteristics (luminescence intensity and emission lifetime) superior to those of conventional core/shell nanosized semiconductors. There are provided a triple-layer semiconductor nanoparticle, and triple-layer semiconductor nanorod, having an average particle diameter of 2 to 50 nm and comprising a core layer, an interlayer and a shell layer, wherein the layers are composed of different crystals, and wherein the crystal constructing the shell layer exhibits a band gap greater than that of the crystal constructing the core layer, and wherein the crystal constructing the interlayer has a lattice constant assuming a value between those of the crystal constructing the core layer and the crystal constructing the shell layer.
Abstract:
A semiconductor nanoparticle and semiconductor nanorod that have optical characteristics (luminescence intensity and emission lifetime) superior to those of conventional core/shell nanosized semiconductors. There are provided a triple-layer semiconductor nanoparticle, and triple-layer semiconductor nanorod, having an average particle diameter of 2 to 50 nm and comprising a core layer, an interlayer and a shell layer, wherein the layers are composed of different crystals, and wherein the crystal constructing the shell layer exhibits a band gap greater than that of the crystal constructing the core layer, and wherein the crystal constructing the interlayer has a lattice constant assuming a value between those of the crystal constructing the core layer and the crystal constructing the shell layer.
Abstract:
A scintillator panel comprising: a radiation-transparent substrate; and a phosphor layer provided on the substrate, the phosphor layer emitting light when irradiated with a radiation, wherein at least one edge of the substrate and at least one edge of the phosphor layer are arranged on a same plane.
Abstract:
First wirings and first dummy wirings are in a p-SiOC film on a substrate. A p-SiOC film is formed, and a cap film is formed on the p-SiOC film. A dual damascene wiring, including vias connected to the first wirings and the second wirings, is formed in the cap film and the p-SiOC film 22. Dummy vias are formed on the periphery of isolated vias.
Abstract:
A nonvolatile semiconductor memory device comprises a plurality of sectors each having a plurality of memory cell arrays, a controller which responds to an address signal and a control signal to activate at least one of the sectors; and a plurality of data comparing circuits provided in the memory cell arrays, respectively, the data comparing circuits each which latches a write data to be written the respective memory cell arrays and compares the write data latched and a data read out from the respective memory cell arrays to produce a comparison result. The controller activates all of the sectors when the control signal has a first logic level regardless of levels of the address signal so that write data is written into the memory cell arrays of the sectors activated. The controller activates the sectors in sequence in response to changing levels of the address signal when the control signal has a second logic level to output the comparison results from the data comparing circuits in sequence.
Abstract:
A nonvolatile semiconductor memory device has writing signal line selecting transistors for applying writing signals to memory elements, respectively, reading signal line selecting transistors for delivering reading signals from the memory elements, respectively, and bit line selecting transistors connected between the writing signal line selecting transistors or the reading signal line selecting transistors and the memory elements, for selecting bit lines of each of the memory elements.
Abstract:
A radiation detector of a compact size and producing almost no image defect is disclosed, comprising a first radiation-transmissive substrate, a first adhesive layer, a second radiation-transmissive substrate, a scintillator layer and an output substrate provided with a photoelectric conversion element layer which are provided sequentially in this order, wherein an arrangement region of the scintillator layer in a planar direction of the layer includes an arrangement region of the photoelectric conversion element layer in a planar direction of the layer and an arrangement region of the first substrate in a planar direction of the substrate, and the arrangement region of the first substrate includes the arrangement region of the photoelectric conversion element layer; and when the arrangement region of the scintillator layer is divided to plural areas, a coefficient of variation of filling factor is 20% or less which is defined as a standard deviation of filling factor of phosphor of the plural areas, divided by an average value of the filling factor.
Abstract:
A method of manufacturing a scintillator panel comprising the sequential steps of: forming an electroconductive metal reflection layer on a polymer film substrate; forming a protective layer on the electroconductive metal reflection layer; cutting the polymer film substrate having thereon the electroconductive metal reflection layer and the protective layer into a prescribed size; forming a scintillator layer by a vacuum evaporation method on the protective layer of the polymer film substrate cut in the prescribed size to prepare a scintillator sheet; and sealing the scintillator sheet with sealing films provided above and below the scintillator sheet to prepare the scintillator panel, wherein static electricity is removed from the polymer film substrate through a cut surface of the electroconductive metal reflection layer when the scintillator layer is vacuum evaporated.
Abstract:
A scintillator plate comprising: (i) a radiation transmissive substrate; (ii) a light absorbing layer formed on the substrate, the light absorbing layer absorbing light of a prescribed wavelength range; and (iii) a scintillator layer formed on the light absorbing layer, the scintillator layer converting radiation to the light having a wavelength absorbable to the light absorbing layer.