公开(公告)号：US20120001282A1

公开(公告)日：2012-01-05

申请号：US13256052

申请日：2010-02-23

Applicant: Narito Goto ,  Mitsuru Sekiguchi

Inventor： Narito Goto ,  Mitsuru Sekiguchi

IPC: H01L31/115

CPC classification number: G01T1/2018 ,  C09K11/628 ,  G21K4/00 ,  G21K2004/06

Abstract: A radiation detector of a compact size and producing almost no image defect is disclosed, comprising a first radiation-transmissive substrate, a first adhesive layer, a second radiation-transmissive substrate, a scintillator layer and an output substrate provided with a photoelectric conversion element layer which are provided sequentially in this order, wherein an arrangement region of the scintillator layer in a planar direction of the layer includes an arrangement region of the photoelectric conversion element layer in a planar direction of the layer and an arrangement region of the first substrate in a planar direction of the substrate, and the arrangement region of the first substrate includes the arrangement region of the photoelectric conversion element layer; and when the arrangement region of the scintillator layer is divided to plural areas, a coefficient of variation of filling factor is 20% or less which is defined as a standard deviation of filling factor of phosphor of the plural areas, divided by an average value of the filling factor.

Abstract translation: 公开了一种紧凑尺寸并且几乎不产生图像缺陷的辐射检测器，包括第一辐射透射基板，第一粘合层，第二辐射透射基板，闪烁体层和设置有光电转换元件层的输出基板 其顺序地依次提供，其中闪烁体层在层的平面方向上的布置区域包括在该层的平面方向上的光电转换元件层的布置区域和第一基板的布置区域 基板的平面方向，第一基板的配置区域包括光电转换元件层的配置区域; 并且当闪烁体层的排列区域被划分为多个区域时，填充系数的变化系数为20％以下，其被定义为多个区域的荧光体的填充系数的标准偏差除以平均值 填充因子。

公开(公告)号：US20080149852A1

公开(公告)日：2008-06-26

申请号：US11945965

申请日：2007-11-27

Applicant: Takehiko Shoji ,  Mitsuru Sekiguchi

Inventor： Takehiko Shoji ,  Mitsuru Sekiguchi

IPC: G21K4/00 ,  B29C65/64

CPC classification number: G21K4/00 ,  B29C65/38 ,  B29C66/001 ,  B29C66/433 ,  B29C66/71 ,  B29C66/72321 ,  B29C66/82661 ,  B29K2001/00 ,  B29K2001/12 ,  B29K2067/00 ,  C23C14/0694 ,  G01T1/202 ,  G21K2004/10 ,  Y10T156/1052 ,  Y10T156/12 ,  B29K2083/00 ,  B29K2079/08 ,  B29K2077/00 ,  B29K2075/02 ,  B29K2075/00 ,  B29K2067/003 ,  B29K2063/00 ,  B29K2061/04 ,  B29K2033/08 ,  B29K2027/06 ,  B29K2023/12 ,  B29K2019/00 ,  B29K2009/06 ,  B29K2001/18

Abstract: A method of manufacturing a scintillator panel comprising the sequential steps of: forming an electroconductive metal reflection layer on a polymer film substrate; forming a protective layer on the electroconductive metal reflection layer; cutting the polymer film substrate having thereon the electroconductive metal reflection layer and the protective layer into a prescribed size; forming a scintillator layer by a vacuum evaporation method on the protective layer of the polymer film substrate cut in the prescribed size to prepare a scintillator sheet; and sealing the scintillator sheet with sealing films provided above and below the scintillator sheet to prepare the scintillator panel, wherein static electricity is removed from the polymer film substrate through a cut surface of the electroconductive metal reflection layer when the scintillator layer is vacuum evaporated.

Abstract translation: 一种制造闪烁体面板的方法，包括以下顺序步骤：在聚合物薄膜基底上形成导电金属反射层; 在导电金属反射层上形成保护层; 将其上具有导电金属反射层和保护层的聚合物膜基材切割成规定尺寸; 通过真空蒸发法在以规定尺寸切割的聚合物膜基材的保护层上形成闪烁体层，以制备闪烁体片; 并用闪烁体片上方和下方设置的密封膜密封闪烁体片以制备闪烁体面板，其中当闪烁体层被真空蒸发时，通过导电金属反射层的切割表面从聚合物膜基底上去除静电。

公开(公告)号：US20080054181A1

公开(公告)日：2008-03-06

申请号：US11846312

申请日：2007-08-28

Applicant: Masashi Kondo ,  Yasushi Nagata ,  Mitsuru Sekiguchi

Inventor： Masashi Kondo ,  Yasushi Nagata ,  Mitsuru Sekiguchi

IPC: G01T1/20

CPC classification number: G01T1/202

Abstract: A scintillator plate comprising: (i) a radiation transmissive substrate; (ii) a light absorbing layer formed on the substrate, the light absorbing layer absorbing light of a prescribed wavelength range; and (iii) a scintillator layer formed on the light absorbing layer, the scintillator layer converting radiation to the light having a wavelength absorbable to the light absorbing layer.

Abstract translation: 一种闪烁体板，包括：（i）辐射透射基底; （ii）形成在所述基板上的光吸收层，所述光吸收层吸收规定波长范围的光; 和（iii）形成在光吸收层上的闪烁体层，所述闪烁体层将辐射转换成具有可吸收光吸收层的波长的光。

公开(公告)号：US06333255B1

公开(公告)日：2001-12-25

申请号：US09137150

申请日：1998-08-20

Applicant: Mitsuru Sekiguchi

Inventor： Mitsuru Sekiguchi

IPC: H01L214763

CPC classification number: H01L21/76885 ,  H01L21/7682 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A lower carbon film as a provisional film, a lower SiO2 film and an upper carbon film are formed, and then trenches having a wiring pattern are formed in the upper carbon film. Next, contact holes are formed through the lower carbon film and the lower SiO2 film. Then, wires and plugs are formed by filling in the trenches and contact holes with a barrier metal film and a Cu alloy film. After these process steps are repeatedly performed several times, a dummy opening is formed to extend downward through the uppermost SiO2 film. Thereafter, the carbon films are removed by performing ashing with oxygen introduced through the dummy opening. As a result, gas layers are formed to surround the wires and plugs. In this manner, a highly reliable gas-dielectric interconnect structure can be obtained by performing simple process steps.

Abstract translation: 形成作为临时膜的低碳膜，下部SiO 2膜和上部碳膜，然后在上部碳膜中形成具有布线图案的沟槽。 接下来，通过下部碳膜和下部SiO 2膜形成接触孔。 然后，通过用阻挡金属膜和Cu合金膜填充沟槽和接触孔来形成电线和插头。 在这些处理步骤重复进行几次之后，形成虚拟开口以向下延伸通过最上面的SiO 2膜。 此后，通过经由虚拟开口引入的氧进行灰化除去碳膜。 结果，形成气体层以包围电线和插头。 以这种方式，通过执行简单的工艺步骤可以获得高度可靠的气体 - 电介质互连结构。

公开(公告)号：US6008124A

公开(公告)日：1999-12-28

申请号：US804461

申请日：1997-02-21

Applicant: Mitsuru Sekiguchi ,  Michinari Yamanaka

Inventor： Mitsuru Sekiguchi ,  Michinari Yamanaka

IPC: H01L21/28 ,  H01L21/285 ,  H01L21/336 ,  H01L21/768 ,  H01L23/485 ,  H01L29/45 ,  H01L29/49 ,  H01L21/425 ,  H01L21/44 ,  H01L21/4763

CPC classification number: H01L21/76876 ,  H01L21/28052 ,  H01L21/28518 ,  H01L21/76841 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76858 ,  H01L23/485 ,  H01L29/41783 ,  H01L29/456 ,  H01L29/4933 ,  H01L29/665 ,  H01L29/66575 ,  H01L2924/0002 ,  Y10S438/918

Abstract: After formation of a connection hole or before deposition of an insulator film, a semiconductor device is placed onto a cathode of a plasma generator. A surface of a metal silicide film such as a silicide of titanium is exposed to a plasma of a nitrogen-containing gas at 550 degrees centigrade or less. As a result of such processing, a barrier compound layer, composed of a compound of nitrogen, oxygen, metal and silicon, is formed at a near-surface region of the metal silicide film of the titanium silicide film. Thereafter, while forming a buried layer from material superior in step coverage such as an Al--Ti compound and an aluminum alloy, reaction between the metal silicide film and the buried layer in a later annealing treatment can be avoided without depositing a barrier metal such as a titanium nitride/nitride film in the connection hole. Accordingly, contact resistance, sheet resistance and junction leakage can be reduced and reliability can be improved.

Abstract translation: 在形成连接孔之后或在沉积绝缘膜之前，将半导体器件放置在等离子体发生器的阴极上。 金属硅化物膜如钛硅化物的表面在550摄氏度以下暴露于含氮气体的等离子体。 作为这种处理的结果，在硅化钛膜的金属硅化物膜的近表面区域处形成由氮，氧，金属和硅的化合物构成的阻挡化合物层。 此后，在由Al-Ti化合物和铝合金等阶梯覆盖性优异的材料形成掩埋层的情况下，可以避免在稍后的退火处理中金属硅化物膜与掩埋层之间的反应，而不会形成诸如 连接孔中的氮化钛/氮化物膜。 因此，可以降低接触电阻，薄层电阻和结漏电，提高可靠性。

公开(公告)号：US5661068A

公开(公告)日：1997-08-26

申请号：US467290

申请日：1995-06-06

Applicant: Shuji Hirao ,  Hisashi Ogawa ,  Yuka Terai ,  Mitsuru Sekiguchi ,  Masanori Fukumoto ,  Isao Miyanaga

Inventor： Shuji Hirao ,  Hisashi Ogawa ,  Yuka Terai ,  Mitsuru Sekiguchi ,  Masanori Fukumoto ,  Isao Miyanaga

IPC: H01L21/02 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/265

CPC classification number: H01L28/84 ,  H01L21/3213 ,  H01L21/32131 ,  H01L21/76838 ,  Y10S148/014 ,  Y10S438/964

Abstract: A method of the invention for fabricating a semiconductor device includes the steps of: forming an oxide film having a non-uniform thickness on silicon; reducing at least a portion of the oxide film using gas containing a metal element, and growing a metal film containing the metal element on the silicon by reacting an exposed surface of the silicon with the gas; and removing the metal film.

Abstract translation: 本发明的制造半导体器件的方法包括以下步骤：在硅上形成具有不均匀厚度的氧化膜; 使用含有金属元素的气体还原至少一部分氧化物膜，并且通过使硅的暴露表面与气体反应，在硅上生长含有金属元素的金属膜; 并除去金属膜。

公开(公告)号：US5474949A

公开(公告)日：1995-12-12

申请号：US9583

申请日：1993-01-26

Applicant: Shuji Hirao ,  Hisashi Ogawa ,  Yuka Terai ,  Mitsuru Sekiguchi ,  Masanori Fukumoto ,  Isao Miyanaga

Inventor： Shuji Hirao ,  Hisashi Ogawa ,  Yuka Terai ,  Mitsuru Sekiguchi ,  Masanori Fukumoto ,  Isao Miyanaga

IPC: H01L21/02 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/473

CPC classification number: H01L28/84 ,  H01L21/3213 ,  H01L21/32131 ,  H01L21/76838 ,  Y10S148/014 ,  Y10S438/964

Abstract: A method of the invention for fabricating a semiconductor device includes the steps of: forming an oxide film having a non-uniform thickness on silicon; reducing at least a portion of the oxide film using gas containing a metal element, and growing a metal film containing the metal element on the silicon by reacting an exposed surface of the silicon with the gas; and removing the metal film.

Abstract translation: 本发明的制造半导体器件的方法包括以下步骤：在硅上形成具有不均匀厚度的氧化膜; 使用含有金属元素的气体还原至少一部分氧化物膜，并且通过使硅的暴露表面与气体反应，在硅上生长含有金属元素的金属膜; 并除去金属膜。

公开(公告)号：US20090170094A1

公开(公告)日：2009-07-02

申请号：US12162157

申请日：2006-11-27

Applicant: Mitsuru Sekiguchi ,  Kazuyoshi Goan ,  Kazuya Tsukada

Inventor： Mitsuru Sekiguchi ,  Kazuyoshi Goan ,  Kazuya Tsukada

IPC: C12Q1/68

CPC classification number: G01N33/587 ,  B82Y15/00 ,  B82Y20/00 ,  G01N21/6428 ,  G01N33/582 ,  G01N2021/6439

Abstract: A fluorescent labeling substance that is capable of realizing highly appropriate labeling through enhancing of the luminous efficiency of semiconductor nanoparticles or nanorods. The fluorescent labeling substance can be provided by disposing on a surface of shell of nanorods or nanoparticles having a modification group capable of adsorption with a biosubstance, such as protein, nucleic acid or antibody, a region devoid of the above modification group.

Abstract translation: 一种能够通过提高半导体纳米颗粒或纳米棒的发光效率而实现高度适当标记的荧光标记物质。 荧光标记物质可以通过在具有能够与生物体吸附的修饰基团（如蛋白质，核酸或抗体），没有上述修饰基团的区域的纳米棒或纳米颗粒的表面上进行设置来提供。

公开(公告)号：US20080111083A1

公开(公告)日：2008-05-15

申请号：US11937878

申请日：2007-11-09

Applicant: Masashi Kondo ,  Takehiko Shoji ,  Mitsuru Sekiguchi

Inventor： Masashi Kondo ,  Takehiko Shoji ,  Mitsuru Sekiguchi

IPC: G01T1/24

CPC classification number: G01T1/202

Abstract: A scintillator panel containing a substrate having thereon a reflection layer, and intermediate layer, and a scintillator layer in the sequence set forth, wherein the intermediate layer contains a resin having a glass transition temperature, and the intermediate layer has been subjected to a process of heating to a temperature of equal to or grater than the glass transition temperature of the resin.

Abstract translation: 一种含有其上具有反射层和中间层的基板和闪烁体层的闪烁体面板，其中中间层包含具有玻璃化转变温度的树脂，并且中间层已进行了 加热至与树脂的玻璃化转变温度相等或更大的温度。

公开(公告)号：US20080099687A1

公开(公告)日：2008-05-01

申请号：US11875064

申请日：2007-10-19

Applicant: Takehiko Shoji ,  Mitsuru Sekiguchi

Inventor： Takehiko Shoji ,  Mitsuru Sekiguchi

IPC: G01T1/20

CPC classification number: G01T1/2018

Abstract: A radiation image detector comprising: a scintillator panel comprising a substrate having thereon a phosphor layer; a protective cover provided on a side of the substrate opposite the phosphor layer, wherein a radiation is incident on the side of the substrate opposite the phosphor layer; a light receiving element provided on a side of the scintillator panel opposite the protective cover, the light receiving element having a plurality of two-dimensionally arrayed light receiving pixels which photoelectrically convert light generated by the scintillator panel, wherein distance D satisfies: 0.2 mm≦D≦2.0 mm wherein D is a distance between following (i) and (ii): (i) a surface of the protective cover facing the scintillator panel; and (ii) a surface of the substrate on which the phosphor layer is provided.

Abstract translation: 一种放射线图像检测器，包括：闪烁体面板，包括其上具有磷光体层的衬底; 设置在与所述荧光体层相对的所述基板的一侧的保护罩，其中，所述基板的与所述荧光体层相反的一侧入射; 光接收元件设置在与保护罩相对的闪烁器面板的一侧上，该光接收元件具有多个二维阵列的受光像素，其对由闪烁体面板产生的光进行光电转换，其中距离D满足：0.2mm < = D <= 2.0mm其中D是以下（i）和（ii）之间的距离：（i）面向闪烁体面板的保护盖的表面; 和（ii）设置有荧光体层的基板的表面。