公开(公告)号：US11239123B2

公开(公告)日：2022-02-01

申请号：US14888600

申请日：2013-08-29

Applicant: Mitsubishi Electric Corporation

Inventor： Tatsuya Kawase ,  Noboru Miyamoto ,  Mikio Ishihara ,  Junji Fujino ,  Yuji Imoto ,  Naoki Yoshimatsu

IPC: H01L23/053 ,  H01L23/31 ,  H01L23/367 ,  H01L23/492 ,  H01L23/498 ,  H01L23/00 ,  H01L23/36 ,  H01L23/373 ,  H01L21/48 ,  B60L50/51 ,  H01L23/40 ,  H01L25/07

Abstract: A base plate (1) includes a fixed surface and a radiating surface which is a surface opposite to the fixed surface. An insulating substrate (3) is bonded to the fixed surface of the base plate (1). Conductive patterns (4,5) are provided on the insulating substrate (3). Semiconductor chips (7,8) are bonded to the conductive pattern (4). An Al wire (12) connects top surfaces of the semiconductor chip (8) to the conductive pattern (5). The insulating substrate (3), the conductive patterns (4 ,5), the semiconductor chips (7 to 10) and the Al wires (11 to 13) are sealed with resin (16). The base plate (1) includes a metal part (19) and a reinforcing member (20) provided in the metal part (19). A Young's modulus of the reinforcing member (20) is higher than a Youngs modulus of the metal part (19).

公开(公告)号：US10104775B2

公开(公告)日：2018-10-16

申请号：US14269585

申请日：2014-05-05

Applicant: Mitsubishi Electric Corporation

Inventor： Naoki Yoshimatsu ,  Masayoshi Shinkai ,  Taketoshi Shikano ,  Daisuke Murata ,  Nobuyoshi Kimoto ,  Yuji Imoto ,  Mikio Ishihara

IPC: H05K1/18 ,  H05K3/06 ,  H05K3/20 ,  H05K3/28 ,  H05K1/03 ,  H05K1/02

Abstract: A semiconductor device according to the present invention includes a ceramic substrate, a plurality of circuit patterns arranged on a surface of the ceramic substrate, a semiconductor element arranged on an upper surface of at least one circuit pattern, and a sealing resin for sealing the ceramic substrate, the plurality of circuit patterns, and the semiconductor element, in which an undercut part is formed in opposed side surfaces of the circuit patterns adjacent to one another, the undercut part is configured such that an end of an upper surface of the circuit pattern protrudes outside the circuit pattern more than an end of a lower surface of the circuit pattern on the ceramic substrate, and the undercut part is also filled with the sealing resin.

公开(公告)号：US09735100B2

公开(公告)日：2017-08-15

申请号：US14051310

申请日：2013-10-10

Applicant: MITSUBISHI ELECTRIC CORPORATION

Inventor： Hidetoshi Ishibashi ,  Yoshihiro Yamaguchi ,  Naoki Yoshimatsu ,  Hidehiro Koga

IPC: H01L23/48 ,  H01L21/44 ,  H01L23/50 ,  H01L25/00 ,  H01L25/07 ,  H01L23/00 ,  H01L23/373 ,  H01L23/433 ,  H01L23/492 ,  H01L23/495

CPC classification number: H01L23/50 ,  H01L23/3735 ,  H01L23/4334 ,  H01L23/492 ,  H01L23/49562 ,  H01L24/36 ,  H01L24/40 ,  H01L25/072 ,  H01L25/50 ,  H01L2224/40095 ,  H01L2224/40137 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00014

Abstract: A semiconductor device according to the present invention includes a plurality of semiconductor chips, a plate electrode disposed on the plurality of semiconductor chips for connecting the plurality of semiconductor chips, and an electrode disposed on the plate electrode. The electrode has a plurality of intermittent bonding portions to be bonded to the plate electrode and a protruded portion which is protruded erectly from the bonding portions. The protruded portion has an ultrasonic bonding portion which is parallel with the bonding portion and is ultrasonic bonded to an external electrode.

公开(公告)号：US09698091B2

公开(公告)日：2017-07-04

申请号：US14754167

申请日：2015-06-29

Applicant: Mitsubishi Electric Corporation

Inventor： Shinsuke Asada ,  Naoki Yoshimatsu ,  Yuji Imoto ,  Yusuke Ishiyama ,  Junji Fujino

IPC: H05K7/00 ,  H01L23/498 ,  H01L23/00 ,  H01L23/373 ,  H01L23/057 ,  H01L23/29 ,  H01L25/07 ,  H01L23/24

CPC classification number: H01L23/49827 ,  H01L23/057 ,  H01L23/24 ,  H01L23/295 ,  H01L23/3735 ,  H01L23/49811 ,  H01L24/37 ,  H01L24/40 ,  H01L25/072 ,  H01L2224/29111 ,  H01L2224/32225 ,  H01L2224/33181 ,  H01L2224/37011 ,  H01L2224/371 ,  H01L2224/37124 ,  H01L2224/37147 ,  H01L2224/37599 ,  H01L2224/40095 ,  H01L2224/45124 ,  H01L2224/48247 ,  H01L2224/73213 ,  H01L2224/73215 ,  H01L2224/73221 ,  H01L2224/73263 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2924/13055 ,  H01L2924/181 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/01051 ,  H01L2924/00012 ,  H01L2924/00014

Abstract: A power semiconductor device includes an insulating substrate, a semiconductor element, a case, and a wiring member. The case forms a container body having a bottom surface defined by a surface of the insulating substrate, to which said semiconductor element is bonded. The wiring member has a bonding portion positioned above an upper surface electrode of the semiconductor element. The bonding portion of the wiring member is provided with a projection portion projecting toward the upper surface electrode of the semiconductor element and bonded to the upper surface electrode with a solder, and a through hole passing through the bonding portion in a thickness direction through the projection portion.

公开(公告)号：US09691730B2

公开(公告)日：2017-06-27

申请号：US14754141

申请日：2015-06-29

Applicant: Mitsubishi Electric Corporation

Inventor： Naoki Yoshimatsu ,  Yusuke Ishiyama ,  Taketoshi Shikano ,  Yuji Imoto ,  Junji Fujino ,  Shinsuke Asada

IPC: H01L29/40 ,  H01L23/00 ,  H01L23/057 ,  H01L25/07

CPC classification number: H01L24/48 ,  H01L23/057 ,  H01L24/45 ,  H01L24/83 ,  H01L24/84 ,  H01L24/85 ,  H01L25/072 ,  H01L2224/37599 ,  H01L2224/40137 ,  H01L2224/45124 ,  H01L2224/48472 ,  H01L2224/73221 ,  H01L2924/00014 ,  H01L2924/13055 ,  H01L2924/00 ,  H01L2224/37099 ,  H01L2224/05599 ,  H01L2224/85399

Abstract: A semiconductor device according to the present invention includes an insulating substrate having a circuit pattern, semiconductor elements bonded on the circuit pattern with a brazing material, and a wiring terminal bonded with a brazing material on an electrode provided on each of the semiconductor elements on an opposite side of the circuit pattern, in which a part of the wiring terminal is in contact with the insulating substrate, and insulated from the circuit pattern.

公开(公告)号：US09437460B2

公开(公告)日：2016-09-06

申请号：US14665577

申请日：2015-03-23

Applicant: Mitsubishi Electric Corporation

Inventor： Naoki Yoshimatsu ,  Kiyohiro Uchida ,  Taketoshi Shikano ,  Masayoshi Shinkai

IPC: H01L21/44 ,  H01L21/48 ,  H01L21/56 ,  H01L23/498 ,  H01L23/00 ,  H01L23/31 ,  H01L21/50 ,  H01L23/373

CPC classification number: H01L21/4853 ,  H01L21/50 ,  H01L21/56 ,  H01L23/3121 ,  H01L23/3735 ,  H01L23/49811 ,  H01L23/49861 ,  H01L24/83 ,  H01L2224/291 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48472 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/92247 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/014

Abstract: Entry of resin into a cylindrical electrode can be suppressed without excessively increasing the number of parts and without unnecessarily damaging members. For this purpose, a semiconductor chip and a cylindrical electrode are mounted on one main surface of substrate. The substrate, the semiconductor chip, and the cylindrical electrode are sealed with resin material such that the cylindrical electrode has one end mounted to the substrate and the other opposite end at least exposed. After the step of sealing, an opening extending from the other end of the cylindrical electrode to a cavity in the cylindrical electrode is formed. Before performing the step of forming an opening, the other end of the cylindrical electrode is closed.

Abstract translation: 可以抑制树脂进入圆柱形电极而不会过多地增加部件的数量并且不会不必要地损坏构件。 为此，半导体芯片和圆柱形电极安装在基板的一个主表面上。 基板，半导体芯片和圆柱形电极用树脂材料密封，使得圆柱形电极的一端安装到基板，另一端至少暴露。 在密封步骤之后，形成从圆柱形电极的另一端延伸到圆柱形电极中的空腔的开口。 在进行形成开口的步骤之前，将圆筒形电极的另一端封闭。

公开(公告)号：US11101225B2

公开(公告)日：2021-08-24

申请号：US16472097

申请日：2017-02-09

Applicant: Mitsubishi Electric Corporation

Inventor： Hiroyuki Harada ,  Naoki Yoshimatsu ,  Osamu Usui ,  Yuji Imoto ,  Yuki Yoshioka

IPC: H01L23/057 ,  H01L23/047 ,  H01L23/31 ,  H01L23/495 ,  H01L23/24 ,  H01L23/373 ,  H01L23/36 ,  H01L23/28 ,  H01L25/07 ,  H01L25/18 ,  H01L23/48 ,  H01L23/00 ,  H02P27/08

Abstract: A semiconductor chip (6) is disposed on the insulation substrate (2). A lead frame (8) is bonded to an upper surface of the semiconductor chip (6). A sealing resin (12) covers the semiconductor chip (6), the insulation substrate (2), and the lead frame (8). A stress mitigation resin (13) having a lower elastic modulus than that of the sealing resin (12) is partially applied to an end of the lead frame (8).

公开(公告)号：US09455215B2

公开(公告)日：2016-09-27

申请号：US14222402

申请日：2014-03-21

Applicant: Mitsubishi Electric Corporation

Inventor： Yuji Imoto ,  Naoki Yoshimatsu ,  Junji Fujino

IPC: H01L23/48 ,  H01L23/495 ,  H01L21/50 ,  H01L23/24 ,  H01L23/00 ,  H01L23/043 ,  H01L23/373 ,  H01L23/498

CPC classification number: H01L23/495 ,  H01L21/50 ,  H01L23/043 ,  H01L23/24 ,  H01L23/3735 ,  H01L23/49861 ,  H01L24/00 ,  H01L24/33 ,  H01L2224/37147 ,  H01L2224/37599 ,  H01L2224/40137 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014

Abstract: A semiconductor device includes a conductive portion having semiconductor elements provided on a substrate, a case housing the conductive portion, and a lead terminal integrated into the case to be directly connected to the semiconductor elements or an interconnection of the substrate. The lead terminal has a stress relief shape for reliving stress generated in the lead terminal.

Abstract translation: 半导体器件包括具有设置在衬底上的半导体元件的导电部分，容纳导电部分的壳体，以及集成到壳体中以直接连接到半导体元件的引线端子或衬底的互连。 引线端子具有用于再生引线端子中产生的应力的应力消除形状。

公开(公告)号：US11562977B2

公开(公告)日：2023-01-24

申请号：US17269480

申请日：2018-11-20

Applicant: Mitsubishi Electric Corporation

Inventor： Naoki Yoshimatsu

IPC: H01L23/00 ,  H01L23/043 ,  H01L23/498 ,  H01L25/07 ,  H01L25/18

Abstract: A semiconductor device includes a substrate, a resin case, and a wiring member having an exposed portion adjacent to a first fixing portion fixed in a wall surface of the resin case and exposed to outside, and a second fixing portion fixed in the wall surface of the resin case at a position different from the first fixing portion with respect to a portion extending from the first fixing portion into the resin case, in which the wiring member is bonded to a surface of the semiconductor element by solder in the resin case, and has a plate shape having a length, a thickness, and a width, in which the wiring member has the thickness being uniform and is flat in the resin case, and the width of the second fixing portion is narrower than the width of the exposed portion.

公开(公告)号：US10707141B2

公开(公告)日：2020-07-07

申请号：US16319975

申请日：2016-10-24

Applicant: Mitsubishi Electric Corporation

Inventor： Naoki Yoshimatsu ,  Osamu Usui ,  Yuji Imoto

IPC: H01L23/057 ,  H01L21/48 ,  H01L21/56 ,  H01L23/31 ,  H01L23/498 ,  H01L23/28 ,  H01L23/48

Abstract: First and second electrodes (12,13) are provided on an upper surface of the semiconductor chip (9) and spaced apart from each other. A wiring member (15) includes a first joint (15a) bonded to the first electrode (12) and a second joint (15b) bonded to the second electrode (13). Resin (2) seals the semiconductor chip (9), the first and second electrodes (12,13) and the wiring member (15). A hole (18) extending through the wiring member (15) up and down is provided between the first joint (15a) and the second joint (15b).