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公开(公告)号:US11924730B2
公开(公告)日:2024-03-05
申请号:US17101761
申请日:2020-11-23
Applicant: Micron Technology, Inc.
Inventor: Shruthi Kumara Vadivel , Anshika Sharma , Deepti Verma , Fatma Arzum Simsek-Ege , Trupti D. Gawai , Lavanya Sriram
Abstract: Methods, systems, and devices for operating emergency prevention sensor systems are described. Devices can include a plurality of components including a sensor component, a processor, and memory. In an example, a method can include receiving at a processor signaling from a plurality of environmental sensing devices, each having at least one biodegradable component, in an area of concern, wherein the area of concern corresponds to a particular set of coordinates in a database, determining environmental characteristics of an emergency associated with the area of concern based, at least in part, on the signaling, and determining a preventive action based on the determined characteristics. In another example, a number of components of the sensing devices are biodegradable.
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公开(公告)号:US20230371282A1
公开(公告)日:2023-11-16
申请号:US17742154
申请日:2022-05-11
Applicant: Micron Technology, Inc.
Inventor: David A. Kewley , Kevin Baker , Trupti D. Gawai
CPC classification number: H01L27/2463 , G11C13/0023 , G11C2213/77
Abstract: Integrated circuitry comprises a horizontally-elongated insulative wall directly above a conductive node. The wall comprises insulative material. A conductive via extends through the wall to the conductive node. A conductive line is directly above the wall and directly above the conductive via. The conductive via directly electrically couples together the conductive line with the conductive node. Insulator material is longitudinally-along laterally-opposing sides of the wall. An interface of the insulative material of the wall and the insulator material are on each of the laterally-opposing sides of the wall. Other embodiments, including method, are disclosed.
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公开(公告)号:US20230113573A1
公开(公告)日:2023-04-13
申请号:US18048633
申请日:2022-10-21
Applicant: Micron Technology, Inc.
Inventor: Trupti D. Gawai , David S. Pratt , Ahmed M. Elsied , David A. Kewley , Dale W. Collins , Raju Ahmed , Chelsea M. Jordan , Radhakrishna Kotti
IPC: H01L21/768 , H01L23/522 , H01L23/528
Abstract: Methods of manufacturing semiconductor devices, and associated systems and devices, are disclosed herein. In some embodiments, a method of manufacturing a semiconductor device includes forming an opening in an electrically insulative material at least partially over a first electrically conductive feature and a second electrically conductive feature. The method can further include forming a ring of electrically conductive material around a sidewall of the insulative material defining the opening, wherein the ring of electrically conductive material includes (a) a first via portion over the first electrically conductive feature, (b) a second via portion over the second electrically conductive feature, and (c) connecting portions extending between the first and second via portions. Finally, the method can include removing the connecting portions of the ring of electrically conductive material to electrically isolate the first via portion from the second via portion.
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公开(公告)号:US20230064985A1
公开(公告)日:2023-03-02
申请号:US17464016
申请日:2021-09-01
Applicant: Micron Technology, Inc.
Inventor: Trupti D. Gawai , Brooke Spencer , Erica A. Ellingson
Abstract: Methods, systems, and devices associated with a smart scent library are described. An apparatus can include a processing resource and a memory resource having instructions executable to store data representing a number of chemical compositions in a smart scent library. The instructions can be executable to receive data, including a chemical composition, and compare the chemical composition to the number of chemical compositions. The instructions can be executable to identify the chemical composition in response to matching at least a portion of the chemical composition to one of the number of chemical compositions, and transmit data associated with the identified chemical composition.
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公开(公告)号:US20220167138A1
公开(公告)日:2022-05-26
申请号:US17101761
申请日:2020-11-23
Applicant: Micron Technology, Inc.
Inventor: Shruthi Kumara Vadivel , Anshika Sharma , Deepti Verma , Fatma Arzum Simsek-Ege , Trupti D. Gawai , Lavanya Sriram
Abstract: Methods, systems, and devices for operating emergency prevention sensor systems are described. Devices can include a plurality of components including a sensor component, a processor, and memory. In an example, a method can include receiving at a processor signaling from a plurality of environmental sensing devices, each having at least one biodegradable component, in an area of concern, wherein the area of concern corresponds to a particular set of coordinates in a database, determining environmental characteristics of an emergency associated with the area of concern based, at least in part, on the signaling, and determining a preventive action based on the determined characteristics. In another example, a number of components of the sensing devices are biodegradable.
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公开(公告)号:US20230329612A1
公开(公告)日:2023-10-19
申请号:US17720770
申请日:2022-04-14
Applicant: Micron Technology, Inc.
Inventor: Lisa R. Copenspire-Ross , Nkiruka Christian , Trupti D. Gawai , Josephine T. Hamada , Anda C. Mocuta
CPC classification number: A61B5/18 , A61B5/7267 , A61B5/0022 , A61B5/6893 , B60R25/25 , B60W60/0051 , G16H40/63 , B60W2556/65 , B60W2540/221 , B60W2540/223 , B60W2540/225 , B60W2540/21
Abstract: Methods, devices, and systems related to determining driver capability are described. In an example, a method can include receiving, at a computing device, data associated with a driver from a sensor, inputting the data into an artificial intelligence (AI) model, performing an AI operation using the AI model, and determining whether the driver is capable of driving a vehicle based on an output of the AI model.
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公开(公告)号:US20230163030A1
公开(公告)日:2023-05-25
申请号:US18151378
申请日:2023-01-06
Applicant: Micron Technology, Inc.
Inventor: Trupti D. Gawai , David A. Kewley , Aaron M. Lowe , Radhakrishna Kotti , David S. Pratt
IPC: H01L21/768 , H01L23/535
CPC classification number: H01L21/76895 , H01L21/76805 , H01L23/535
Abstract: Methods of manufacturing semiconductor devices, and associated systems and devices, are disclosed herein. In some embodiments, a method of manufacturing a semiconductor device includes forming an opening in an insulative material at least partially over an electrically conductive feature. The method can further include forming a ring of electrically non-conductive material extending at least partially about a sidewall of the insulative material that defines the opening. The method can further include removing a portion of the ring to form an opening over the electrically conductive feature, and then depositing an electrically conductive material into the opening in the ring to form a conductive via electrically coupled to the electrically conductive feature.
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公开(公告)号:US11574842B2
公开(公告)日:2023-02-07
申请号:US17230833
申请日:2021-04-14
Applicant: Micron Technology, Inc.
Inventor: Trupti D. Gawai , David A. Kewley , Aaron M. Lowe , Radhakrishna Kotti , David S. Pratt
IPC: H01L21/768 , H01L23/535
Abstract: Methods of manufacturing semiconductor devices, and associated systems and devices, are disclosed herein. In some embodiments, a method of manufacturing a semiconductor device includes forming an opening in an insulative material at least partially over an electrically conductive feature. The method can further include forming a ring of electrically non-conductive material extending at least partially about a sidewall of the insulative material that defines the opening. The method can further include removing a portion of the ring to form an opening over the electrically conductive feature, and then depositing an electrically conductive material into the opening in the ring to form a conductive via electrically coupled to the electrically conductive feature.
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公开(公告)号:US20220075369A1
公开(公告)日:2022-03-10
申请号:US17013185
申请日:2020-09-04
Applicant: Micron Technology, Inc.
Inventor: Fatma Arzum Simsek-Ege , Deepti Verma , Anshika Sharma , Lavanya Sriram , Trupti D. Gawai
Abstract: Apparatuses, and methods related machine learning (ML) with sensor information relevant to a location of a roadway are described. Memory systems including processing resource and memory resources receive sensor information from a sensor associated with a vehicle and a relevant to a location on a roadway. The received sensor information from the vehicle can be operated upon, using a ML algorithm, and an instruction can be transmitted based on ML algorithm. In an example, a method can include receiving, at a processing resource, sensor information from a sensor associated with a first vehicle and relevant to a location on a roadway, operating on the received sensor information associated with the first vehicle using a ML algorithm stored in a memory resource accessible by the processing resource, transmitting instructions relevant to the location, based on the sensor information associated with the first vehicle that was operated upon by the ML algorithm.
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公开(公告)号:US20240258167A1
公开(公告)日:2024-08-01
申请号:US18634809
申请日:2024-04-12
Applicant: Micron Technology, Inc.
Inventor: Trupti D. Gawai , David S. Pratt , Ahmed M. Elsied , David A. Kewley , Dale W. Collins , Raju Ahmed , Chelsea M. Jordan , Radhakrishna Kotti
IPC: H01L21/768 , H01L23/522 , H01L23/528
CPC classification number: H01L21/76883 , H01L21/76816 , H01L23/5226 , H01L23/5283
Abstract: Methods of manufacturing semiconductor devices, and associated systems and devices, are disclosed herein. In some embodiments, a method of manufacturing a semiconductor device includes forming an opening in an electrically insulative material at least partially over a first electrically conductive feature and a second electrically conductive feature. The method can further include forming a ring of electrically conductive material around a sidewall of the insulative material defining the opening, wherein the ring of electrically conductive material includes (a) a first via portion over the first electrically conductive feature, (b) a second via portion over the second electrically conductive feature, and (c) connecting portions extending between the first and second via portions. Finally, the method can include removing the connecting portions of the ring of electrically conductive material to electrically isolate the first via portion from the second via portion.
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