公开(公告)号：US07579661B2

公开(公告)日：2009-08-25

申请号：US10579871

申请日：2004-11-17

申请人： Masayasu Miyata ,  Masamitsu Uehara

发明人： Masayasu Miyata ,  Masamitsu Uehara

IPC分类号： H01L29/92

CPC分类号： H01L21/28185 ,  H01L21/0214 ,  H01L21/02145 ,  H01L21/02148 ,  H01L21/02159 ,  H01L21/02164 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/3144 ,  H01L21/3145 ,  H01L21/31604 ,  H01L21/31612 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/31662 ,  H01L29/511 ,  H01L29/517 ,  H01L29/518 ,  H01L2924/0002 ,  H01L2924/00

摘要： An semiconductor device (1) of the invention includes a semiconductor substrate provided with a channel region (21), a source region (22) and a drain region (23), a gate insulating film (3) laminated on the channel region (21), and a gate electrode (5). The gate insulating film (3) is formed of an insulative inorganic material as a main material, and further contains hydrogen. The absorbance of infrared radiation of which wave number is in the range of 3200 to 3500 cm−1 is 0.02 or less when the gate insulating film (3) to which an electric field has never been applied is measured with Fourier Transform Infrared Spectroscopy at room temperature.

摘要翻译： 本发明的半导体器件（1）包括设置有沟道区（21），源区（22）和漏区（23）的半导体衬底，层叠在沟道区（21）上的栅极绝缘膜 ）和栅电极（5）。 栅绝缘膜（3）由绝缘无机材料作为主要材料形成，并且还包含氢。 使用傅立叶变换红外光谱法测量当没有施加电场的栅极绝缘膜（3）时，波数在3200〜3500cm -1范围内的红外线辐射的吸光度为0.02以下 温度。

公开(公告)号：US20070102823A1

公开(公告)日：2007-05-10

申请号：US10579871

申请日：2004-11-17

申请人： Masayasu Miyata ,  Masamitsu Uehara

发明人： Masayasu Miyata ,  Masamitsu Uehara

IPC分类号： H01L21/4763 ,  H01L23/48

CPC分类号： H01L21/28185 ,  H01L21/0214 ,  H01L21/02145 ,  H01L21/02148 ,  H01L21/02159 ,  H01L21/02164 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/3144 ,  H01L21/3145 ,  H01L21/31604 ,  H01L21/31612 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/31662 ,  H01L29/511 ,  H01L29/517 ,  H01L29/518 ,  H01L2924/0002 ,  H01L2924/00

摘要： An semiconductor device (1) of the invention includes a semiconductor substrate provided with a channel region (21), a source region (22) and a drain region (23), a gate insulating film (3) laminated on the channel region (21), and a gate electrode (5). The gate insulating film (3) is formed of an insulative inorganic material as a main material, and further contains hydrogen. The absorbance of infrared radiation of which wave number is in the range of 3200 to 3500 cm−1 is 0.02 or less when the gate insulating film (3) to which an electric field has never been applied is measured with Fourier Transform Infrared Spectroscopy at room temperature.

摘要翻译： 本发明的半导体器件（1）包括设置有沟道区（21），源区（22）和漏区（23）的半导体衬底，层叠在沟道区（21）上的栅极绝缘膜 ）和栅电极（5）。 栅绝缘膜（3）由绝缘无机材料作为主要材料形成，并且还包含氢。 测量从未施加电场的栅极绝缘膜（3）的波数在3200〜3500cm -1以下的红外线的吸光度为0.02以下 在室温下进行傅立叶变换红外光谱。

公开(公告)号：US07696047B2

公开(公告)日：2010-04-13

申请号：US12183704

申请日：2008-07-31

申请人： Masayasu Miyata ,  Masamitsu Uehara

发明人： Masayasu Miyata ,  Masamitsu Uehara

IPC分类号： H01L21/8234 ,  H01L21/336

CPC分类号： H01L21/28202 ,  H01L21/0214 ,  H01L21/02145 ,  H01L21/02148 ,  H01L21/02159 ,  H01L21/02164 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02337 ,  H01L21/28194 ,  H01L21/3003 ,  H01L21/316 ,  H01L21/31608 ,  H01L21/31612 ,  H01L21/31654 ,  H01L29/517 ,  H01L29/518 ,  H01L29/6659 ,  H01L29/78

摘要： A gate insulating film 3 is formed of an insulative inorganic material containing silicon and oxygen as a main material. The gate insulating film 3 contains hydrogen atoms. A part of the absorbance of infrared radiation of which wave number is in the range of 830 to 900 cm−1 is less than both the absorbance of infrared radiation at the wave number of 830 cm−1 and the absorbance of infrared radiation at the wave number of 900 cm−1 when the insulating film to which an electric field has never been applied is measured by means of Fourier Transform Infrared Spectroscopy at room temperature. Further, in the case where the absolute value of the difference between the absorbance of infrared radiation at the wave number of 830 cm−1 and the absorbance of infrared radiation at the wave number of 770 cm−1 is defined as A and the absolute value of the difference between the absorbance of infrared radiation at the wave number of 900 cm−1 and the absorbance of infrared radiation at the wave number of 990 cm−1 is defined as B, then A and B satisfy the relation: A/B is 1.8 or more.

摘要翻译： 栅绝缘膜3由含有硅和氧作为主要材料的绝缘无机材料形成。 栅绝缘膜3含有氢原子。 波数在830〜900cm -1范围内的红外辐射吸收率的一部分小于波数为830cm -1的红外辐射的吸光度和波浪上的红外辐射的吸光度 通过在室温下的傅里叶变换红外光谱来测量当未施加电场的绝缘膜时的900cm -1的数量。 此外，在波数为830cm -1处的红外辐射的吸光度与波数为770cm -1的红外线的吸光度的绝对值的绝对值定义为A，绝对值 波数为900cm -1的红外辐射的吸光度与波数为990cm -1的红外辐射的吸光度之间的差异定义为B，则A和B满足关系：A / B为 1.8以上。

公开(公告)号：US20080293170A1

公开(公告)日：2008-11-27

申请号：US12183704

申请日：2008-07-31

申请人： Masayasu Miyata ,  Masamitsu Uehara

发明人： Masayasu Miyata ,  Masamitsu Uehara

IPC分类号： H01L21/66

CPC分类号： H01L21/28202 ,  H01L21/0214 ,  H01L21/02145 ,  H01L21/02148 ,  H01L21/02159 ,  H01L21/02164 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02337 ,  H01L21/28194 ,  H01L21/3003 ,  H01L21/316 ,  H01L21/31608 ,  H01L21/31612 ,  H01L21/31654 ,  H01L29/517 ,  H01L29/518 ,  H01L29/6659 ,  H01L29/78

摘要： A gate insulating film 3 is formed of an insulative inorganic material containing silicon and oxygen as a main material. The gate insulating film 3 contains hydrogen atoms. A part of the absorbance of infrared radiation of which wave number is in the range of 830 to 900 cm−1 is less than both the absorbance of infrared radiation at the wave number of 830 cm−1 and the absorbance of infrared radiation at the wave number of 900 cm−1 when the insulating film to which an electric field has never been applied is measured by means of Fourier Transform Infrared Spectroscopy at room temperature. Further, in the case where the absolute value of the difference between the absorbance of infrared radiation at the wave number of 830 cm−1 and the absorbance of infrared radiation at the wave number of 770 cm−1 is defined as A and the absolute value of the difference between the absorbance of infrared radiation at the wave number of 900 cm−1 and the absorbance of infrared radiation at the wave number of 990 cm−1 is defined as B, then A and B satisfy the relation: A/B is 1.8 or more.

摘要翻译： 栅绝缘膜3由含有硅和氧作为主要材料的绝缘无机材料形成。 栅绝缘膜3含有氢原子。 波数在830〜900cm -1范围内的红外辐射吸收率的一部分小于波数为830cm -1的红外辐射的吸光度和波浪上的红外辐射的吸光度 通过在室温下的傅里叶变换红外光谱来测量当未施加电场的绝缘膜时的900cm -1的数量。 此外，在波数为830cm -1处的红外辐射的吸光度与波数为770cm -1的红外线的吸光度的绝对值的绝对值定义为A，绝对值 波数为900cm -1的红外辐射的吸光度与波数为990cm -1的红外辐射的吸光度之间的差异定义为B，则A和B满足关系：A / B为 1.8以上。

公开(公告)号：US20070145513A1

公开(公告)日：2007-06-28

申请号：US10583180

申请日：2004-12-17

申请人： Masayasu Miyata ,  Masamitsu Uehara

发明人： Masayasu Miyata ,  Masamitsu Uehara

IPC分类号： H01L29/47

CPC分类号： H01L21/28202 ,  H01L21/0214 ,  H01L21/02145 ,  H01L21/02148 ,  H01L21/02159 ,  H01L21/02164 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02337 ,  H01L21/28194 ,  H01L21/3003 ,  H01L21/316 ,  H01L21/31608 ,  H01L21/31612 ,  H01L21/31654 ,  H01L29/517 ,  H01L29/518 ,  H01L29/6659 ,  H01L29/78

摘要： A gate insulating film 3 is formed of an insulative inorganic material containing silicon and oxygen as a main material. The gate insulating film 3 contains hydrogen atoms. A part of the absorbance of infrared radiation of which wave number is in the range of 830 to 900 cm−1 is less than both the absorbance of infrared radiation at the wave number of 830 cm−1 and the absorbance of infrared radiation at the wave number of 900 cm−1 when the insulating film to which an electric field has never been applied is measured by means of Fourier Transform Infrared Spectroscopy at room temperature. Further, in the case where the absolute value of the difference between the absorbance of infrared radiation at the wave number of 830 cm−1 and the absorbance of infrared radiation at the wave number of 770 cm−1 is defined as A and the absolute value of the difference between the absorbance of infrared radiation at the wave number of 900 cm−1 and the absorbance of infrared radiation at the wave number of 990 cm−1 is defined as B, then A and B satisfy the relation: A/B is 1.8 or more.

摘要翻译： 栅绝缘膜3由含有硅和氧作为主要材料的绝缘无机材料形成。 栅绝缘膜3含有氢原子。 波数在830-900cm -1范围内的红外辐射的吸光度的一部分小于波数为830cm -1的红外辐射的吸光度， 通过傅里叶变换红外光谱法测量当未施加电场的绝缘膜时，波长为900cm -1的波数的红外辐射的吸光度为1， 室内温度。 此外，在波数为830cm -1的红外辐射的吸光度与波数为770cm -1的红外辐射的吸光度之差的绝对值的情况下， -1定义为A，波数为900cm -1处的红外辐射的吸光度与波数的红外辐射的吸光度之间的差的绝对值 990cm -1定义为B，则A和B满足关系：A / B为1.8以上。

公开(公告)号：US08632894B2

公开(公告)日：2014-01-21

申请号：US11922780

申请日：2006-06-21

申请人： Masamitsu Uehara

发明人： Masamitsu Uehara

IPC分类号： B32B9/00 ,  B32B19/00 ,  B05D5/12 ,  H01L29/08 ,  H01L35/24 ,  H01L51/00 ,  H01J1/62 ,  C08G75/00 ,  C08G75/20

CPC分类号： H01L51/005 ,  H01L51/0012 ,  H01L51/0043 ,  H01L51/0065 ,  H01L51/0096 ,  H01L51/50 ,  H01L51/5048 ,  H01L51/5088 ,  H01L51/5221 ,  H01L2251/308 ,  H05B33/22 ,  Y02E10/549 ,  Y02P70/521 ,  Y10T428/266

摘要： A substrate for an electronic device having high carrier transport ability, a method for manufacturing a substrate for an electronic device which can manufacture such a substrate for an electronic device, an electronic device provided with the substrate for an electronic device and having improved properties, and electronic equipment having high reliability are provided. A substrate for an electronic device includes a light emitting layer (organic semiconductor layer), a cathode (inorganic layer), and an intermediate layer provided between the light emitting layer and the cathode so as to make contact with both of the light emitting layer and the cathode. The intermediate layer is constituted of a compound (1) represented by a general formula R—X—O-M as a main component thereof. In the general formula, the R is a hydrocarbon group, the X is any one of binding groups comprising a single bond, a carbonyl group and a sulfonyl group, and the M is any one of a hydrogen atom and a metal atom. Molecules of this compound (1) are oriented along a thickness direction of the intermediate layer in a state that each hydrocarbon group R is positioned on the side of the light emitting layer and each atom M is positioned on the side of the cathode.

摘要翻译： 一种具有高载流子传输能力的电子器件用基板，可制造这种电子器件用基板的电子器件用基板的制造方法，具备电子器件用基板的电子设备，具有改善的特性，以及 提供了具有高可靠性的电子设备。 电子器件用基板包括发光层（有机半导体层），阴极（无机层）和设置在发光层与阴极之间的中间层，以与发光层和阴极 阴极。 中间层由以通式R-X-O-M表示的化合物（1）为主要成分构成。 在通式中，R是烃基，X是包含单键，羰基和磺酰基的任何一种结合基团，M是氢原子和金属原子中的任何一种。 该化合物（1）的分子在每个烃基R位于发光层侧并且每个原子M位于阴极侧的状态下沿着中间层的厚度方向取向。

公开(公告)号：US20050012450A1

公开(公告)日：2005-01-20

申请号：US10854260

申请日：2004-05-27

申请人： Takashi Shinohara ,  Yuji Shinohara ,  Masamitsu Uehara ,  Masamitsu Shimazu ,  Ryuji Ishii

发明人： Takashi Shinohara ,  Yuji Shinohara ,  Masamitsu Uehara ,  Masamitsu Shimazu ,  Ryuji Ishii

IPC分类号： H05B33/10 ,  C09K11/06 ,  H01L51/00 ,  H01L51/50 ,  H05B33/14 ,  H01J1/62

CPC分类号： H01L51/0025 ,  C09K11/06 ,  C09K2211/14 ,  H01L51/5012 ,  H05B33/14 ,  Y10S428/917

摘要： In an organic EL device 1, when a voltage is applied across an anode 3 and a cathode 5, holes are moved in a hole transport layer 41 and electrons are moved in an electron transport layer 43, and the holes and the electrons are recombined in a light emitting layer 42 to emit light. A light emitting material is used to form the light emitting layer 42. When the light emitting layer 42 is formed using the light emitting material, the light emitting layer contains one or more kinds of metallic impurities, but an amount of a metallic impurity of which content is the largest among the metallic impurities contained in the layer is 2.5 ppm or less, or when the light emitting material is dissolved in a liquid so that the concentration thereof becomes 2.0 wt %, the liquid contains one or more kinds of metallic impurities, but an amount of the metallic impurity of which content is the largest among the metallic impurities contained in the liquid is 50 ppb or less. By using such a light emitting material, the decrease of light-emission luminance of the organic EL device 1 can be suppressed.

摘要翻译： 在有机EL器件1中，当跨越阳极3和阴极5施加电压时，空穴在空穴传输层41中移动，并且电子在电子传输层43中移动，并且空穴和电子重新结合在 发光层42。 使用发光材料来形成发光层42.当使用发光材料形成发光层42时，发光层含有一种或多种金属杂质，但是金属杂质的量 在该层中含有的金属杂质中的含量最大为2.5ppm以下，或者当发光材料溶解在液体中使其浓度为2.0重量％时，液体含有一种或多种金属杂质， 但是在液体中含有的金属杂质中的含量最多的金属杂质的量为50ppb以下。 通过使用这样的发光材料，可以抑制有机EL元件1的发光亮度的降低。

公开(公告)号：US07666795B2

公开(公告)日：2010-02-23

申请号：US11955700

申请日：2007-12-13

申请人： Juri Kato ,  Hideaki Oka ,  Masamitsu Uehara

发明人： Juri Kato ,  Hideaki Oka ,  Masamitsu Uehara

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/3141 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02271 ,  H01L21/187 ,  H01L21/2007 ,  H01L21/823481 ,  H01L21/84

摘要： A method for manufacturing a semiconductor device includes forming a SiGe layer on a Si substrate, forming a dummy pattern to expose a surface of the Si substrate, and wet etching the SiGe layer while an etchant is contacted with, the dummy pattern.

摘要翻译： 一种制造半导体器件的方法包括在Si衬底上形成SiGe层，形成虚拟图案以暴露Si衬底的表面，并在蚀刻剂与虚拟图案接触的同时湿蚀刻SiGe层。

公开(公告)号：US20090026925A1

公开(公告)日：2009-01-29

申请号：US11988866

申请日：2006-07-19

申请人： Masamitsu Uehara

发明人： Masamitsu Uehara

IPC分类号： H01J1/62 ,  H01J9/00

CPC分类号： H05B33/14 ,  C09K11/06 ,  C09K2211/1007 ,  C09K2211/1011 ,  C09K2211/1014 ,  C09K2211/1029 ,  H01L51/0039 ,  H01L51/0058 ,  H01L51/006 ,  H01L51/0072 ,  H01L51/5048 ,  Y02E10/549

摘要： An electronic device having an intermediate layer which can transfer smoothly carriers between two layers adjacent to the intermediate layer and having improved properties, and electronic equipment having high reliability are provided. An electronic device includes a pair of electrodes and laminated layers provided between the electrodes. The laminated layers include a hole transport layer (first organic semiconductor layer), a light emitting layer (second organic semiconductor layer), and an intermediate layer provided between the first and second organic semiconductor layers so as to make contact with both of the hole transport layer and the light emitting layer. The intermediate layer is constituted of a compound represented by a general formula A1-B-A2. In this formula, each of the A1 and A2 is a group including at least one of a primary amino group, a secondary amino group, a tertiary amino group, a hydroxyl group, a carbonyl group and a carboxyl group, the A1 and A2 are the same or different, and optionally simultaneously exist, and the B is a group including a fluorene ring. Molecules of the compound are oriented in a state that each group A1 and each group A2 are positioned on the side of the hole transport layer and each group B is positioned on the side of the light emitting layer.

摘要翻译： 一种具有中间层的电子器件，其具有能够在与中间层相邻的两层之间平滑地进行载流子并具有改善的特性的电子设备，以及具有高可靠性的电子设备。 电子设备包括一对电极和设置在电极之间的层叠层。 层叠层包括空穴传输层（第一有机半导体层），发光层（第二有机半导体层）和设置在第一和第二有机半导体层之间的中间层，以便与空穴传输 层和发光层。 中间层由通式A1-B-A2表示的化合物构成。 在该式中，A1和A2各自为包括伯氨基，仲氨基，叔氨基，羟基，羰基和羧基中的至少一个的基团，A1和A2为 相同或不同，任选地同时存在，B是包含芴环的基团。 化合物的分子以各组A1和每组A2位于空穴传输层的侧面并且每组B位于发光层的侧面的状态下取向。

公开(公告)号：US5141559A

公开(公告)日：1992-08-25

申请号：US487578

申请日：1990-03-02

申请人： Masakazu Shinozuka ,  Masamitsu Uehara ,  Makoto Matsuzaki ,  Kenichi Kanbayashi

发明人： Masakazu Shinozuka ,  Masamitsu Uehara ,  Makoto Matsuzaki ,  Kenichi Kanbayashi

IPC分类号： B41J2/01 ,  C09D11/00 ,  C09D11/02 ,  C09D11/033 ,  C09D11/10 ,  C09D11/328 ,  C09D11/34

CPC分类号： C09D11/34

摘要： An ink composition particularly well suited for use in an ink jet printer wherein the ink is jetted at temperatures higher than room temperature. The ink composition includes a metallic complex solvent dye coloring material dispersed in a vehicle of at least one high molecular weight alkyl amine, at least one high molecular weight fatty acid and carnauba wax.