公开(公告)号：US08344618B2

公开(公告)日：2013-01-01

申请号：US11921875

申请日：2006-06-09

申请人： Masamitsu Uehara

发明人： Masamitsu Uehara

IPC分类号： H01J1/62

CPC分类号： H01L51/4233 ,  H01L51/0051 ,  H01L51/0052 ,  H01L51/0062 ,  H01L51/007 ,  H01L51/5048 ,  H01L51/5092 ,  H01L51/5234 ,  Y02E10/549 ,  Y02P70/521

摘要： A light emitting device includes a cathode, an anode, a light emitting layer provided between the cathode and the anode, an intermediate layer provided between the cathode and the light emitting layer so as to be in contact with both the cathode and the light emitting layer. The intermediate layer includes a base in the form of a layer, the base being constituted of a metal oxide based semiconductor material as a main component thereof and having a first surface which is in contact with the light emitting layer and a second surface opposite to the first surface, and a dye carried on the first surface of the base and inner surfaces of pores formed in the base so as to be in contact with the light emitting layer. By using the light emitting device mentioned above, it is possible to improve properties of the light emitting device such as luminous efficiency and the like. A method for manufacturing such a light emitting device is also provided. An electronic device provided with such a light emitting device is also provided. Electronic equipment provided with such an electronic device is also provided.

公开(公告)号：US20090195145A1

公开(公告)日：2009-08-06

申请号：US11794947

申请日：2006-01-10

申请人： Masamitsu Uehara

发明人： Masamitsu Uehara

IPC分类号： H01J1/63 ,  C08G73/06 ,  C08G69/26 ,  B32B27/00

CPC分类号： H01L51/004 ,  C08F8/30 ,  C09K2211/1466 ,  H01B1/121 ,  H01L51/0062 ,  H01L51/5048 ,  Y10S428/917 ,  Y10T428/1059

摘要： A conductive polymer having a high carrier transport ability, a conductive layer formed using the conductive polymer, an electronic device provided with the conductive layer having a high reliability, and electronic equipment provided with such an electronic device are provided. The conductive polymer includes a linear main chain, a plurality of carrier transport structures which contribute to carrier transport and each of which is represented by the following formula (1), and a linking structure which branches off from the main chain to link each of the carrier transport structures to the main chain: General Formula (1) where each R1 independently represents a hydrogen atom, a methyl group or an ethyl group, and the R1s are the same or different.

摘要翻译： 提供具有高载流子传输能力的导电聚合物，使用导电聚合物形成的导电层，具有高可靠性的导电层的电子器件，以及设置有这种电子器件的电子设备。 导电聚合物包括线性主链，有助于载流子传输的多个载流子传输结构，并且每个载流子传输结构由下式（1）表示，并且连接结构从主链分支以将每个 载体传输结构到主链：通式（1）其中每个R 1独立地表示氢原子，甲基或乙基，并且R 1相同或不同。

公开(公告)号：US07439669B2

公开(公告)日：2008-10-21

申请号：US10854260

申请日：2004-05-27

申请人： Takashi Shinohara ,  Yuji Shinohara ,  Masamitsu Uehara ,  Masamitsu Shimazu ,  Ryuji Ishii

发明人： Takashi Shinohara ,  Yuji Shinohara ,  Masamitsu Uehara ,  Masamitsu Shimazu ,  Ryuji Ishii

IPC分类号： H01L51/54 ,  C09K11/55 ,  C09K11/06

CPC分类号： H01L51/0025 ,  C09K11/06 ,  C09K2211/14 ,  H01L51/5012 ,  H05B33/14 ,  Y10S428/917

摘要： An organic EL device with a voltage applied across an anode and a cathode so that holes are moved in a hole transport layer and electrons are moved in an electron transport layer, and the holes and the electrons are recombined in a light emitting layer to emit light. The light emitting layer is formed of light emitting material having one or more kinds of metallic impurities. By using such a light emitting material, the decrease of light-emission luminance of the organic EL device can be suppressed.

摘要翻译： 一种具有施加在阳极和阴极两端的电压的有机EL器件，使得空穴在空穴传输层中移动，并且电子在电子传输层中移动，并且空穴和电子在发光层中复合以发光 。 发光层由具有一种或多种金属杂质的发光材料形成。 通过使用这样的发光材料，可以抑制有机EL元件的发光亮度的降低。

公开(公告)号：US20070145513A1

公开(公告)日：2007-06-28

申请号：US10583180

申请日：2004-12-17

申请人： Masayasu Miyata ,  Masamitsu Uehara

发明人： Masayasu Miyata ,  Masamitsu Uehara

IPC分类号： H01L29/47

CPC分类号： H01L21/28202 ,  H01L21/0214 ,  H01L21/02145 ,  H01L21/02148 ,  H01L21/02159 ,  H01L21/02164 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02337 ,  H01L21/28194 ,  H01L21/3003 ,  H01L21/316 ,  H01L21/31608 ,  H01L21/31612 ,  H01L21/31654 ,  H01L29/517 ,  H01L29/518 ,  H01L29/6659 ,  H01L29/78

摘要： A gate insulating film 3 is formed of an insulative inorganic material containing silicon and oxygen as a main material. The gate insulating film 3 contains hydrogen atoms. A part of the absorbance of infrared radiation of which wave number is in the range of 830 to 900 cm−1 is less than both the absorbance of infrared radiation at the wave number of 830 cm−1 and the absorbance of infrared radiation at the wave number of 900 cm−1 when the insulating film to which an electric field has never been applied is measured by means of Fourier Transform Infrared Spectroscopy at room temperature. Further, in the case where the absolute value of the difference between the absorbance of infrared radiation at the wave number of 830 cm−1 and the absorbance of infrared radiation at the wave number of 770 cm−1 is defined as A and the absolute value of the difference between the absorbance of infrared radiation at the wave number of 900 cm−1 and the absorbance of infrared radiation at the wave number of 990 cm−1 is defined as B, then A and B satisfy the relation: A/B is 1.8 or more.

摘要翻译： 栅绝缘膜3由含有硅和氧作为主要材料的绝缘无机材料形成。 栅绝缘膜3含有氢原子。 波数在830-900cm -1范围内的红外辐射的吸光度的一部分小于波数为830cm -1的红外辐射的吸光度， 通过傅里叶变换红外光谱法测量当未施加电场的绝缘膜时，波长为900cm -1的波数的红外辐射的吸光度为1， 室内温度。 此外，在波数为830cm -1的红外辐射的吸光度与波数为770cm -1的红外辐射的吸光度之差的绝对值的情况下， -1定义为A，波数为900cm -1处的红外辐射的吸光度与波数的红外辐射的吸光度之间的差的绝对值 990cm -1定义为B，则A和B满足关系：A / B为1.8以上。

公开(公告)号：US20050062012A1

公开(公告)日：2005-03-24

申请号：US10854647

申请日：2004-05-27

申请人： Yuji Shinohara ,  Ryuji Ishii ,  Masamitsu Shimazu ,  Masamitsu Uehara

发明人： Yuji Shinohara ,  Ryuji Ishii ,  Masamitsu Shimazu ,  Masamitsu Uehara

IPC分类号： C09K11/06 ,  H01L51/30 ,  H01L51/40 ,  H01L51/50 ,  H01B3/18 ,  H01B1/12 ,  H05B33/12

CPC分类号： H01L51/0037 ,  H01L51/0003 ,  H01L51/5048

摘要： In an organic EL device, when a voltage is applied across an anode and a cathode, holes are moved in a hole transport layer and electrons are moved in an electron transport layer, and the holes and the electrons are recombined in a light emitting layer. In the light emitting layer, excitons are produced by energy released upon the recombination, and the excitons release energy in the form of fluorescence or phosphorescence or emit light when returning to the ground state. The hole transport material is used in the hole transport layer, in which the amount of cationic impurities and/or the amount of anionic impurities are controlled to be small, so that the decrease of light-emission luminance of the organic EL device is suppressed and excellent light emitting properties are maintained for a long period of time.

摘要翻译： 在有机EL器件中，当跨越阳极和阴极施加电压时，空穴在空穴传输层中移动，并且电子在电子传输层中移动，并且空穴和电子在发光层中复合。 在发光层中，通过重组时释放的能量产生激子，激子以荧光或磷光的形式释放能量，或者在返回到基态时发光。 空穴传输材料用于阳离子杂质的量和/或阴离子杂质的量被控制在较小的空穴传输层中，从而抑制了有机EL器件的发光亮度的降低， 优异的发光特性长时间保持。

公开(公告)号：US20050054197A1

公开(公告)日：2005-03-10

申请号：US10406033

申请日：2003-04-02

申请人： Yuzuru Sato ,  Masamitsu Uehara ,  Gyeong Hwang ,  William Goddard

发明人： Yuzuru Sato ,  Masamitsu Uehara ,  Gyeong Hwang ,  William Goddard

IPC分类号： H01L21/22 ,  G06F17/50 ,  H01L21/265 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L21/26513 ,  G06F17/5018 ,  G06F2217/10 ,  H01L21/26566 ,  H01L21/2658

摘要： Techniques for predicting the behavior of dopant and defect components in a substrate lattice formed from a substrate material can be implemented in hardware or software. Fundamental data for a set of microscopic processes that can occur during one or more material processing operations is obtained. Such data can include data representing the kinetics of processes in the set of microscopic processes and the energetics and structure of possible states in the material processing operations. From the fundamental data and a set of external conditions, distributions of dopant and defect components in the substrate lattice are predicted. The distributions of one or more fast components are each predicted by calculating the concentration of the particular fast component for a time period before that fast component reaches its pseudo steady state by solving a first relationship and calculating the concentration of that fast component after the time period by solving a second relationship based on other components, the pseudo steady state of a fast component being a state in which the concentration of that fast component is determined by concentrations of other components. The distribution of Bs3Bi, in addition to the distributions of Bs, BsI, BsI2, BsI3, BsBi, BsBi2, BsBi3, BsBiI, BsBiI2, Bs2Bi, Bs2Bi2, I and In, are calculated by solving the first relationship to predict the distribution of boron after annealing, where Bs and Bi represent substitutional boron and interstitial boron, respectively, and I and In represent interstitial silicon and a cluster of n I's, respectively.

摘要翻译： 用于预测由衬底材料形成的衬底晶格中的掺杂剂和缺陷组分的行为的技术可以在硬件或软件中实现。 获得可在一个或多个材料加工操作期间发生的一组微观工艺的基本数据。 这样的数据可以包括表示微观过程集合中的过程的动力学的数据，以及材料处理操作中可能状态的能量学和结构。 从基础数据和一组外部条件，预测衬底晶格中的掺杂剂和缺陷组分的分布。 一个或多个快速分量的分布各自通过在该快速分量达到其伪稳态之前的时间段内计算特定快速分量的浓度来求解第一关系并计算该时间段之后该快分量的浓度 通过解决基于其他成分的第二关系，快速成分的伪稳定状态是通过其他成分的浓度来确定该快速成分的浓度的状态。 通过求解第一关系来计算Bs3Bi的分布，除了Bs，BsI，BsI2，BsI3，BsBi，BsBi2，BsBi3，BsBiI，BsBiI2，Bs2Bi，Bs2Bi2，I和In的分布外，还分布了硼 退火后，Bs和Bi分别表示取代硼和间隙硼，I和In分别表示间隙硅和n I簇。

公开(公告)号：US08632894B2

公开(公告)日：2014-01-21

申请号：US11922780

申请日：2006-06-21

申请人： Masamitsu Uehara

发明人： Masamitsu Uehara

IPC分类号： B32B9/00 ,  B32B19/00 ,  B05D5/12 ,  H01L29/08 ,  H01L35/24 ,  H01L51/00 ,  H01J1/62 ,  C08G75/00 ,  C08G75/20

CPC分类号： H01L51/005 ,  H01L51/0012 ,  H01L51/0043 ,  H01L51/0065 ,  H01L51/0096 ,  H01L51/50 ,  H01L51/5048 ,  H01L51/5088 ,  H01L51/5221 ,  H01L2251/308 ,  H05B33/22 ,  Y02E10/549 ,  Y02P70/521 ,  Y10T428/266

摘要： A substrate for an electronic device having high carrier transport ability, a method for manufacturing a substrate for an electronic device which can manufacture such a substrate for an electronic device, an electronic device provided with the substrate for an electronic device and having improved properties, and electronic equipment having high reliability are provided. A substrate for an electronic device includes a light emitting layer (organic semiconductor layer), a cathode (inorganic layer), and an intermediate layer provided between the light emitting layer and the cathode so as to make contact with both of the light emitting layer and the cathode. The intermediate layer is constituted of a compound (1) represented by a general formula R—X—O-M as a main component thereof. In the general formula, the R is a hydrocarbon group, the X is any one of binding groups comprising a single bond, a carbonyl group and a sulfonyl group, and the M is any one of a hydrogen atom and a metal atom. Molecules of this compound (1) are oriented along a thickness direction of the intermediate layer in a state that each hydrocarbon group R is positioned on the side of the light emitting layer and each atom M is positioned on the side of the cathode.

摘要翻译： 一种具有高载流子传输能力的电子器件用基板，可制造这种电子器件用基板的电子器件用基板的制造方法，具备电子器件用基板的电子设备，具有改善的特性，以及 提供了具有高可靠性的电子设备。 电子器件用基板包括发光层（有机半导体层），阴极（无机层）和设置在发光层与阴极之间的中间层，以与发光层和阴极 阴极。 中间层由以通式R-X-O-M表示的化合物（1）为主要成分构成。 在通式中，R是烃基，X是包含单键，羰基和磺酰基的任何一种结合基团，M是氢原子和金属原子中的任何一种。 该化合物（1）的分子在每个烃基R位于发光层侧并且每个原子M位于阴极侧的状态下沿着中间层的厚度方向取向。

公开(公告)号：US20050012450A1

公开(公告)日：2005-01-20

申请号：US10854260

申请日：2004-05-27

申请人： Takashi Shinohara ,  Yuji Shinohara ,  Masamitsu Uehara ,  Masamitsu Shimazu ,  Ryuji Ishii

发明人： Takashi Shinohara ,  Yuji Shinohara ,  Masamitsu Uehara ,  Masamitsu Shimazu ,  Ryuji Ishii

IPC分类号： H05B33/10 ,  C09K11/06 ,  H01L51/00 ,  H01L51/50 ,  H05B33/14 ,  H01J1/62

CPC分类号： H01L51/0025 ,  C09K11/06 ,  C09K2211/14 ,  H01L51/5012 ,  H05B33/14 ,  Y10S428/917

摘要： In an organic EL device 1, when a voltage is applied across an anode 3 and a cathode 5, holes are moved in a hole transport layer 41 and electrons are moved in an electron transport layer 43, and the holes and the electrons are recombined in a light emitting layer 42 to emit light. A light emitting material is used to form the light emitting layer 42. When the light emitting layer 42 is formed using the light emitting material, the light emitting layer contains one or more kinds of metallic impurities, but an amount of a metallic impurity of which content is the largest among the metallic impurities contained in the layer is 2.5 ppm or less, or when the light emitting material is dissolved in a liquid so that the concentration thereof becomes 2.0 wt %, the liquid contains one or more kinds of metallic impurities, but an amount of the metallic impurity of which content is the largest among the metallic impurities contained in the liquid is 50 ppb or less. By using such a light emitting material, the decrease of light-emission luminance of the organic EL device 1 can be suppressed.

摘要翻译： 在有机EL器件1中，当跨越阳极3和阴极5施加电压时，空穴在空穴传输层41中移动，并且电子在电子传输层43中移动，并且空穴和电子重新结合在 发光层42。 使用发光材料来形成发光层42.当使用发光材料形成发光层42时，发光层含有一种或多种金属杂质，但是金属杂质的量 在该层中含有的金属杂质中的含量最大为2.5ppm以下，或者当发光材料溶解在液体中使其浓度为2.0重量％时，液体含有一种或多种金属杂质， 但是在液体中含有的金属杂质中的含量最多的金属杂质的量为50ppb以下。 通过使用这样的发光材料，可以抑制有机EL元件1的发光亮度的降低。

公开(公告)号：US07696047B2

公开(公告)日：2010-04-13

申请号：US12183704

申请日：2008-07-31

申请人： Masayasu Miyata ,  Masamitsu Uehara

发明人： Masayasu Miyata ,  Masamitsu Uehara

IPC分类号： H01L21/8234 ,  H01L21/336

CPC分类号： H01L21/28202 ,  H01L21/0214 ,  H01L21/02145 ,  H01L21/02148 ,  H01L21/02159 ,  H01L21/02164 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02337 ,  H01L21/28194 ,  H01L21/3003 ,  H01L21/316 ,  H01L21/31608 ,  H01L21/31612 ,  H01L21/31654 ,  H01L29/517 ,  H01L29/518 ,  H01L29/6659 ,  H01L29/78

摘要： A gate insulating film 3 is formed of an insulative inorganic material containing silicon and oxygen as a main material. The gate insulating film 3 contains hydrogen atoms. A part of the absorbance of infrared radiation of which wave number is in the range of 830 to 900 cm−1 is less than both the absorbance of infrared radiation at the wave number of 830 cm−1 and the absorbance of infrared radiation at the wave number of 900 cm−1 when the insulating film to which an electric field has never been applied is measured by means of Fourier Transform Infrared Spectroscopy at room temperature. Further, in the case where the absolute value of the difference between the absorbance of infrared radiation at the wave number of 830 cm−1 and the absorbance of infrared radiation at the wave number of 770 cm−1 is defined as A and the absolute value of the difference between the absorbance of infrared radiation at the wave number of 900 cm−1 and the absorbance of infrared radiation at the wave number of 990 cm−1 is defined as B, then A and B satisfy the relation: A/B is 1.8 or more.

摘要翻译： 栅绝缘膜3由含有硅和氧作为主要材料的绝缘无机材料形成。 栅绝缘膜3含有氢原子。 波数在830〜900cm -1范围内的红外辐射吸收率的一部分小于波数为830cm -1的红外辐射的吸光度和波浪上的红外辐射的吸光度 通过在室温下的傅里叶变换红外光谱来测量当未施加电场的绝缘膜时的900cm -1的数量。 此外，在波数为830cm -1处的红外辐射的吸光度与波数为770cm -1的红外线的吸光度的绝对值的绝对值定义为A，绝对值 波数为900cm -1的红外辐射的吸光度与波数为990cm -1的红外辐射的吸光度之间的差异定义为B，则A和B满足关系：A / B为 1.8以上。

公开(公告)号：US20090272152A1

公开(公告)日：2009-11-05

申请号：US12502683

申请日：2009-07-14

申请人： Hideya Moridaira ,  Masamitsu Uehara ,  Tamotsu Kamiya

发明人： Hideya Moridaira ,  Masamitsu Uehara ,  Tamotsu Kamiya

IPC分类号： C03B37/01

CPC分类号： C03B37/01245 ,  C03B37/01211 ,  C03B37/0126 ,  C03B37/02754 ,  Y02P40/57

摘要： The present invention provides a method for manufacturing an optical fiber comprising the steps of forming a glass body containing a core, preparing a glass tube which will form a cladding portion, inserting the glass body into the glass tube, and collapsing the glass tube with the glass body by heating, wherein the method comprises a step of processing the glass tube such that it has at least one end tapered to which a pull is to be applied. The method may further comprise the steps of cleaning the outer surface of the glass tube, choosing the outer diameter of the glass body and the inner diameter of the glass tube such that the difference between the two diameters is not lower than 1.0 mm but not higher than 10.0 mm, choosing the inner diameter of a supporting tube attached to an inert end (opposite to the pulled end) of the glass tube such that it is equal to or higher than the diameter of the glass tube, with respect to the drawn end of the glass tube, processing the end such that its inner surface has a taper and the tapered end is sealed, and providing a spacer to the glass assembly such that the interval between the outer surface of the glass body and the inner surface of the glass tube exhibits a practically uniform profile over the full length of the glass assembly.

摘要翻译： 本发明提供一种光纤的制造方法，其特征在于，包括以下步骤：形成包含芯的玻璃体，制备将形成包层部分的玻璃管，将玻璃体插入玻璃管中，以及将玻璃管与 玻璃体，其中所述方法包括处理所述玻璃管的步骤，使得所述玻璃管具有至少一个尖端，所述至少一个端部将被施加拉力。 该方法还可以包括以下步骤：清洁玻璃管的外表面，选择玻璃体的外径和玻璃管的内径，使得两个直径之间的差不小于1.0mm但不高于 选择与玻璃管的惰性端（与拉端相反）的支撑管的内径，使其等于或高于玻璃管的直径相对于拉伸端 的玻璃管的加工，使得其内表面具有锥形并且锥形端部被密封，并且向玻璃组件提供间隔件，使得玻璃体的外表面与玻璃的内表面之间的间隔 管在玻璃组件的整个长度上呈现出几乎均匀的轮廓。