摘要:
The present invention provides a method for manufacturing an optical fiber comprising the steps of forming a glass body containing a core, preparing a glass tube which will form a cladding portion, inserting the glass body into the glass tube, and collapsing the glass tube with the glass body by heating, wherein the method comprises a step of processing the glass tube such that it has at least one end tapered to which a pull is to be applied. The method may further comprise the steps of cleaning the outer surface of the glass tube, choosing the outer diameter of the glass body and the inner diameter of the glass tube such that the difference between the two diameters is not lower than 1.0 mm but not higher than 10.0 mm, choosing the inner diameter of a supporting tube attached to an inert end (opposite to the pulled end) of the glass tube such that it is equal to or higher than the diameter of the glass tube, with respect to the drawn end of the glass tube, processing the end such that its inner surface has a taper and the tapered end is sealed, and providing a spacer to the glass assembly such that the interval between the outer surface of the glass body and the inner surface of the glass tube exhibits a practically uniform profile over the full length of the glass assembly.
摘要:
A method of manufacturing an optical fiber, characterized by comprising the steps of forming a glass body having a core, forming a glass tube constituting a clad portion, inserting the glass body into the glass tube, forming the glass body integrally with the glass tube, finishing at least the extraction side end part of the glass tube in a tapered shape and washing the outer surface of the glass tube, characterized in that a difference between the outer diameter of the glass body and the inner diameter of the glass tube is 1.0 to 10.0 mm, and the inner diameter of a support tube fitted to one end of the glass tube is increased more than that of the glass tube or the extraction side end part of the glass tube is sealed with a tapered part provided at least on the inner surface thereof and a spacer is installed so that a clearance between the outer diameter of the glass body and the inner diameter of the glass tube becomes generally constant in the longitudinal direction.
摘要:
A substrate for an electronic device having high carrier transport ability, a method for manufacturing a substrate for an electronic device which can manufacture such a substrate for an electronic device, an electronic device provided with the substrate for an electronic device and having improved properties, and electronic equipment having high reliability are provided. A substrate for an electronic device includes a light emitting layer (organic semiconductor layer), a cathode (inorganic layer), and an intermediate layer provided between the light emitting layer and the cathode so as to make contact with both of the light emitting layer and the cathode. The intermediate layer is constituted of a compound (1) represented by a general formula R—X—O-M as a main component thereof. In the general formula, the R is a hydrocarbon group, the X is any one of binding groups comprising a single bond, a carbonyl group and a sulfonyl group, and the M is any one of a hydrogen atom and a metal atom. Molecules of this compound (1) are oriented along a thickness direction of the intermediate layer in a state that each hydrocarbon group R is positioned on the side of the light emitting layer and each atom M is positioned on the side of the cathode.
摘要:
In an organic EL device 1, when a voltage is applied across an anode 3 and a cathode 5, holes are moved in a hole transport layer 41 and electrons are moved in an electron transport layer 43, and the holes and the electrons are recombined in a light emitting layer 42 to emit light. A light emitting material is used to form the light emitting layer 42. When the light emitting layer 42 is formed using the light emitting material, the light emitting layer contains one or more kinds of metallic impurities, but an amount of a metallic impurity of which content is the largest among the metallic impurities contained in the layer is 2.5 ppm or less, or when the light emitting material is dissolved in a liquid so that the concentration thereof becomes 2.0 wt %, the liquid contains one or more kinds of metallic impurities, but an amount of the metallic impurity of which content is the largest among the metallic impurities contained in the liquid is 50 ppb or less. By using such a light emitting material, the decrease of light-emission luminance of the organic EL device 1 can be suppressed.
摘要:
A method for manufacturing a semiconductor device includes forming a SiGe layer on a Si substrate, forming a dummy pattern to expose a surface of the Si substrate, and wet etching the SiGe layer while an etchant is contacted with, the dummy pattern.
摘要:
An electronic device having an intermediate layer which can transfer smoothly carriers between two layers adjacent to the intermediate layer and having improved properties, and electronic equipment having high reliability are provided. An electronic device includes a pair of electrodes and laminated layers provided between the electrodes. The laminated layers include a hole transport layer (first organic semiconductor layer), a light emitting layer (second organic semiconductor layer), and an intermediate layer provided between the first and second organic semiconductor layers so as to make contact with both of the hole transport layer and the light emitting layer. The intermediate layer is constituted of a compound represented by a general formula A1-B-A2. In this formula, each of the A1 and A2 is a group including at least one of a primary amino group, a secondary amino group, a tertiary amino group, a hydroxyl group, a carbonyl group and a carboxyl group, the A1 and A2 are the same or different, and optionally simultaneously exist, and the B is a group including a fluorene ring. Molecules of the compound are oriented in a state that each group A1 and each group A2 are positioned on the side of the hole transport layer and each group B is positioned on the side of the light emitting layer.
摘要:
An ink composition particularly well suited for use in an ink jet printer wherein the ink is jetted at temperatures higher than room temperature. The ink composition includes a metallic complex solvent dye coloring material dispersed in a vehicle of at least one high molecular weight alkyl amine, at least one high molecular weight fatty acid and carnauba wax.
摘要:
An electronic device having an intermediate layer which can transfer smoothly carriers between two layers adjacent to the intermediate layer and having improved properties, and electronic equipment having high reliability are provided. An electronic device includes a pair of electrodes and laminated layers provided between the electrodes. The laminated layers include a hole transport layer (first organic semiconductor layer), a light emitting layer (second organic semiconductor layer), and an intermediate layer provided between the first and second organic semiconductor layers so as to make contact with both of the hole transport layer and the light emitting layer. The intermediate layer is constituted of a compound represented by a general formula A1-B-A2. In this formula, each of the A1 and A2 is a group including at least one of a primary amino group, a secondary amino group, a tertiary amino group, a hydroxyl group, a carbonyl group and a carboxyl group, the A1 and A2 are the same or different, and optionally simultaneously exist, and the B is a group including a fluorene ring. Molecules of the compound are oriented in a state that each group A1 and each group A2 are positioned on the side of the hole transport layer and each group B is positioned on the side of the light emitting layer.
摘要:
An semiconductor device (1) of the invention includes a semiconductor substrate provided with a channel region (21), a source region (22) and a drain region (23), a gate insulating film (3) laminated on the channel region (21), and a gate electrode (5). The gate insulating film (3) is formed of an insulative inorganic material as a main material, and further contains hydrogen. The absorbance of infrared radiation of which wave number is in the range of 3200 to 3500 cm−1 is 0.02 or less when the gate insulating film (3) to which an electric field has never been applied is measured with Fourier Transform Infrared Spectroscopy at room temperature.
摘要:
A substrate for an electronic device having high carrier transport ability, a method for manufacturing a substrate for an electronic device which can manufacture such a substrate for an electronic device, an electronic device provided with the substrate for an electronic device and having improved properties, and electronic equipment having high reliability are provided. A substrate for an electronic device includes a light emitting layer (organic semiconductor layer), a cathode (inorganic layer), and an intermediate layer provided between the light emitting layer and the cathode so as to make contact with both of the light emitting layer and the cathode. The intermediate layer is constituted of a compound (1) represented by a general formula R—X—O-M as a main component thereof. In the general formula, the R is a hydrocarbon group, the X is any one of binding groups comprising a single bond, a carbonyl group and a sulfonyl group, and the M is any one of a hydrogen atom and a metal atom. Molecules of this compound (1) are oriented along a thickness direction of the intermediate layer in a state that each hydrocarbon group R is positioned on the side of the light emitting layer and each atom M is positioned on the side of the cathode.