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1.发明授权Method for evaluating a gate insulation film characteristic for use in a semiconductor device 失效用于评估半导体器件中使用的栅极绝缘膜特性的方法公开(公告)号：US07696047B2
公开(公告)日：2010-04-13
申请号：US12183704
申请日：2008-07-31
申请人： Masayasu Miyata , Masamitsu Uehara
发明人： Masayasu Miyata , Masamitsu Uehara
IPC分类号： H01L21/8234 , H01L21/336
CPC分类号： H01L21/28202 , H01L21/0214 , H01L21/02145 , H01L21/02148 , H01L21/02159 , H01L21/02164 , H01L21/02238 , H01L21/02255 , H01L21/02337 , H01L21/28194 , H01L21/3003 , H01L21/316 , H01L21/31608 , H01L21/31612 , H01L21/31654 , H01L29/517 , H01L29/518 , H01L29/6659 , H01L29/78
摘要： A gate insulating film 3 is formed of an insulative inorganic material containing silicon and oxygen as a main material. The gate insulating film 3 contains hydrogen atoms. A part of the absorbance of infrared radiation of which wave number is in the range of 830 to 900 cm−1 is less than both the absorbance of infrared radiation at the wave number of 830 cm−1 and the absorbance of infrared radiation at the wave number of 900 cm−1 when the insulating film to which an electric field has never been applied is measured by means of Fourier Transform Infrared Spectroscopy at room temperature. Further, in the case where the absolute value of the difference between the absorbance of infrared radiation at the wave number of 830 cm−1 and the absorbance of infrared radiation at the wave number of 770 cm−1 is defined as A and the absolute value of the difference between the absorbance of infrared radiation at the wave number of 900 cm−1 and the absorbance of infrared radiation at the wave number of 990 cm−1 is defined as B, then A and B satisfy the relation: A/B is 1.8 or more.
摘要翻译： 栅绝缘膜3由含有硅和氧作为主要材料的绝缘无机材料形成。 栅绝缘膜3含有氢原子。 波数在830〜900cm -1范围内的红外辐射吸收率的一部分小于波数为830cm -1的红外辐射的吸光度和波浪上的红外辐射的吸光度 通过在室温下的傅里叶变换红外光谱来测量当未施加电场的绝缘膜时的900cm -1的数量。 此外，在波数为830cm -1处的红外辐射的吸光度与波数为770cm -1的红外线的吸光度的绝对值的绝对值定义为A，绝对值 波数为900cm -1的红外辐射的吸光度与波数为990cm -1的红外辐射的吸光度之间的差异定义为B，则A和B满足关系：A / B为 1.8以上。
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2.发明申请公开(公告)号：US20080293170A1
公开(公告)日：2008-11-27
申请号：US12183704
申请日：2008-07-31
申请人： Masayasu Miyata , Masamitsu Uehara
发明人： Masayasu Miyata , Masamitsu Uehara
IPC分类号： H01L21/66
CPC分类号： H01L21/28202 , H01L21/0214 , H01L21/02145 , H01L21/02148 , H01L21/02159 , H01L21/02164 , H01L21/02238 , H01L21/02255 , H01L21/02337 , H01L21/28194 , H01L21/3003 , H01L21/316 , H01L21/31608 , H01L21/31612 , H01L21/31654 , H01L29/517 , H01L29/518 , H01L29/6659 , H01L29/78
摘要： A gate insulating film 3 is formed of an insulative inorganic material containing silicon and oxygen as a main material. The gate insulating film 3 contains hydrogen atoms. A part of the absorbance of infrared radiation of which wave number is in the range of 830 to 900 cm−1 is less than both the absorbance of infrared radiation at the wave number of 830 cm−1 and the absorbance of infrared radiation at the wave number of 900 cm−1 when the insulating film to which an electric field has never been applied is measured by means of Fourier Transform Infrared Spectroscopy at room temperature. Further, in the case where the absolute value of the difference between the absorbance of infrared radiation at the wave number of 830 cm−1 and the absorbance of infrared radiation at the wave number of 770 cm−1 is defined as A and the absolute value of the difference between the absorbance of infrared radiation at the wave number of 900 cm−1 and the absorbance of infrared radiation at the wave number of 990 cm−1 is defined as B, then A and B satisfy the relation: A/B is 1.8 or more.
摘要翻译： 栅绝缘膜3由含有硅和氧作为主要材料的绝缘无机材料形成。 栅绝缘膜3含有氢原子。 波数在830〜900cm -1范围内的红外辐射吸收率的一部分小于波数为830cm -1的红外辐射的吸光度和波浪上的红外辐射的吸光度 通过在室温下的傅里叶变换红外光谱来测量当未施加电场的绝缘膜时的900cm -1的数量。 此外，在波数为830cm -1处的红外辐射的吸光度与波数为770cm -1的红外线的吸光度的绝对值的绝对值定义为A，绝对值 波数为900cm -1的红外辐射的吸光度与波数为990cm -1的红外辐射的吸光度之间的差异定义为B，则A和B满足关系：A / B为 1.8以上。
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3.发明申请公开(公告)号：US20070145513A1
公开(公告)日：2007-06-28
申请号：US10583180
申请日：2004-12-17
申请人： Masayasu Miyata , Masamitsu Uehara
发明人： Masayasu Miyata , Masamitsu Uehara
IPC分类号： H01L29/47
CPC分类号： H01L21/28202 , H01L21/0214 , H01L21/02145 , H01L21/02148 , H01L21/02159 , H01L21/02164 , H01L21/02238 , H01L21/02255 , H01L21/02337 , H01L21/28194 , H01L21/3003 , H01L21/316 , H01L21/31608 , H01L21/31612 , H01L21/31654 , H01L29/517 , H01L29/518 , H01L29/6659 , H01L29/78
摘要： A gate insulating film 3 is formed of an insulative inorganic material containing silicon and oxygen as a main material. The gate insulating film 3 contains hydrogen atoms. A part of the absorbance of infrared radiation of which wave number is in the range of 830 to 900 cm−1 is less than both the absorbance of infrared radiation at the wave number of 830 cm−1 and the absorbance of infrared radiation at the wave number of 900 cm−1 when the insulating film to which an electric field has never been applied is measured by means of Fourier Transform Infrared Spectroscopy at room temperature. Further, in the case where the absolute value of the difference between the absorbance of infrared radiation at the wave number of 830 cm−1 and the absorbance of infrared radiation at the wave number of 770 cm−1 is defined as A and the absolute value of the difference between the absorbance of infrared radiation at the wave number of 900 cm−1 and the absorbance of infrared radiation at the wave number of 990 cm−1 is defined as B, then A and B satisfy the relation: A/B is 1.8 or more.
摘要翻译： 栅绝缘膜3由含有硅和氧作为主要材料的绝缘无机材料形成。 栅绝缘膜3含有氢原子。 波数在830-900cm -1范围内的红外辐射的吸光度的一部分小于波数为830cm -1的红外辐射的吸光度， 通过傅里叶变换红外光谱法测量当未施加电场的绝缘膜时，波长为900cm -1的波数的红外辐射的吸光度为1， 室内温度。 此外，在波数为830cm -1的红外辐射的吸光度与波数为770cm -1的红外辐射的吸光度之差的绝对值的情况下， -1定义为A，波数为900cm -1处的红外辐射的吸光度与波数的红外辐射的吸光度之间的差的绝对值 990cm -1定义为B，则A和B满足关系：A / B为1.8以上。
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公开(公告)号：US07579661B2
公开(公告)日：2009-08-25
申请号：US10579871
申请日：2004-11-17
申请人： Masayasu Miyata , Masamitsu Uehara
发明人： Masayasu Miyata , Masamitsu Uehara
IPC分类号： H01L29/92
CPC分类号： H01L21/28185 , H01L21/0214 , H01L21/02145 , H01L21/02148 , H01L21/02159 , H01L21/02164 , H01L21/02238 , H01L21/02255 , H01L21/02271 , H01L21/02337 , H01L21/28194 , H01L21/28202 , H01L21/28211 , H01L21/3144 , H01L21/3145 , H01L21/31604 , H01L21/31612 , H01L21/31641 , H01L21/31645 , H01L21/31662 , H01L29/511 , H01L29/517 , H01L29/518 , H01L2924/0002 , H01L2924/00
摘要： An semiconductor device (1) of the invention includes a semiconductor substrate provided with a channel region (21), a source region (22) and a drain region (23), a gate insulating film (3) laminated on the channel region (21), and a gate electrode (5). The gate insulating film (3) is formed of an insulative inorganic material as a main material, and further contains hydrogen. The absorbance of infrared radiation of which wave number is in the range of 3200 to 3500 cm−1 is 0.02 or less when the gate insulating film (3) to which an electric field has never been applied is measured with Fourier Transform Infrared Spectroscopy at room temperature.
摘要翻译： 本发明的半导体器件（1）包括设置有沟道区（21），源区（22）和漏区（23）的半导体衬底，层叠在沟道区（21）上的栅极绝缘膜 ）和栅电极（5）。 栅绝缘膜（3）由绝缘无机材料作为主要材料形成，并且还包含氢。 使用傅立叶变换红外光谱法测量当没有施加电场的栅极绝缘膜（3）时，波数在3200〜3500cm -1范围内的红外线辐射的吸光度为0.02以下 温度。
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公开(公告)号：US20070102823A1
公开(公告)日：2007-05-10
申请号：US10579871
申请日：2004-11-17
申请人： Masayasu Miyata , Masamitsu Uehara
发明人： Masayasu Miyata , Masamitsu Uehara
IPC分类号： H01L21/4763 , H01L23/48
CPC分类号： H01L21/28185 , H01L21/0214 , H01L21/02145 , H01L21/02148 , H01L21/02159 , H01L21/02164 , H01L21/02238 , H01L21/02255 , H01L21/02271 , H01L21/02337 , H01L21/28194 , H01L21/28202 , H01L21/28211 , H01L21/3144 , H01L21/3145 , H01L21/31604 , H01L21/31612 , H01L21/31641 , H01L21/31645 , H01L21/31662 , H01L29/511 , H01L29/517 , H01L29/518 , H01L2924/0002 , H01L2924/00
摘要： An semiconductor device (1) of the invention includes a semiconductor substrate provided with a channel region (21), a source region (22) and a drain region (23), a gate insulating film (3) laminated on the channel region (21), and a gate electrode (5). The gate insulating film (3) is formed of an insulative inorganic material as a main material, and further contains hydrogen. The absorbance of infrared radiation of which wave number is in the range of 3200 to 3500 cm−1 is 0.02 or less when the gate insulating film (3) to which an electric field has never been applied is measured with Fourier Transform Infrared Spectroscopy at room temperature.
摘要翻译： 本发明的半导体器件（1）包括设置有沟道区（21），源区（22）和漏区（23）的半导体衬底，层叠在沟道区（21）上的栅极绝缘膜 ）和栅电极（5）。 栅绝缘膜（3）由绝缘无机材料作为主要材料形成，并且还包含氢。 测量从未施加电场的栅极绝缘膜（3）的波数在3200〜3500cm -1以下的红外线的吸光度为0.02以下 在室温下进行傅立叶变换红外光谱。
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6.发明授权公开(公告)号：US07592190B2
公开(公告)日：2009-09-22
申请号：US11632748
申请日：2005-06-01
申请人： Masayasu Miyata
发明人： Masayasu Miyata
CPC分类号： H01L21/31612 , H01L21/0214 , H01L21/02164 , H01L21/02238 , H01L21/02255 , H01L21/02271 , H01L21/02337 , H01L21/31641 , H01L21/31645 , H01L21/31662
摘要： A method of evaluating characteristics of an insulating film 1 is disclosed. The insulating film 1 is formed of an insulative inorganic material as a main material, the insulative inorganic material containing silicon and oxygen. The insulating film 1 further contains hydrogen atoms. The method includes the steps of: analyzing the insulating film 1 to which an electric field has never been applied by Thermal Desorption Spectroscopy; comparing intensity of an H2 fragment with intensity of an OH fragment, the intensity of the H2 fragment and the intensity of the OH fragment being measured at a state where the insulating film 1 is heated at a temperature in the range of 500 to 1000° C.; and evaluating the characteristics of the insulating film 1 on the basis of the comparison result.
摘要翻译： 公开了评价绝缘膜1的特性的方法。 绝缘膜1由绝缘无机材料作为主要材料形成，绝缘无机材料含有硅和氧。 绝缘膜1还含有氢原子。 该方法包括以下步骤：通过热解吸光谱分析从未施加电场的绝缘膜1; 将H 2片段的强度与OH片段的强度，H 2片段的强度和OH片段的强度进行比较，其中绝缘膜1在500至1000℃的温度范围内被加热 。 并根据比较结果评价绝缘膜1的特性。
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公开(公告)号：US08395225B2
公开(公告)日：2013-03-12
申请号：US13430181
申请日：2012-03-26
申请人： Masayasu Miyata
发明人： Masayasu Miyata
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L21/28194 , H01L21/02142 , H01L21/02164 , H01L21/28202 , H01L21/28211 , H01L21/3003 , H01L21/3105 , H01L29/517 , H01L29/518
摘要： A semiconductor device 1 includes: a base 2 mainly formed of a semiconductor material; a gate electrode 5; and a gate insulating film 3 provided between the base 2 and the gate electrode 5. The gate insulating film 3 is formed of an insulative inorganic material containing silicon, oxygen and element X other than silicon and oxygen as a main material. The gate insulating film 3 is provided in contact with the base 2, and contains hydrogen atoms. The gate insulating film 3 has a region where A and B satisfy the relation: B/A is 10 or less in the case where the total concentration of the element X in the region is defined as A and the total concentration of hydrogen in the region is defined as B. Further, the region is at least apart of the gate insulating film 3 in the thickness direction thereof.
摘要翻译： 半导体器件1包括：主要由半导体材料形成的基底2; 栅电极5; 以及设置在基底2和栅极电极5之间的栅极绝缘膜3.栅极绝缘膜3由含有硅，氧以及作为主要材料的硅和氧以外的元素X的绝缘性无机材料形成。 栅极绝缘膜3设置成与基底2接触，并且含有氢原子。 栅极绝缘膜3具有区域，其中A和B满足以下关系：在区域中的元素X的总浓度定义为A的情况下，B / A为10以下，并且该区域中的氢的总浓度 被定义为B.此外，该区域至少在栅极绝缘膜3的厚度方向上分开。
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公开(公告)号：US20120181633A1
公开(公告)日：2012-07-19
申请号：US13430181
申请日：2012-03-26
申请人： Masayasu Miyata
发明人： Masayasu Miyata
CPC分类号： H01L21/28194 , H01L21/02142 , H01L21/02164 , H01L21/28202 , H01L21/28211 , H01L21/3003 , H01L21/3105 , H01L29/517 , H01L29/518
摘要： A semiconductor device 1 includes: a base 2 mainly formed of a semiconductor material; a gate electrode 5; and a gate insulating film 3 provided between the base 2 and the gate electrode 5. The gate insulating film 3 is formed of an insulative inorganic material containing silicon, oxygen and element X other than silicon and oxygen as a main material. The gate insulating film 3 is provided in contact with the base 2, and contains hydrogen atoms. The gate insulating film 3 has a region where A and B satisfy the relation: B/A is 10 or less in the case where the total concentration of the element X in the region is defined as A and the total concentration of hydrogen in the region is defined as B. Further, the region is at least apart of the gate insulating film 3 in the thickness direction thereof.
摘要翻译： 半导体器件1包括：主要由半导体材料形成的基底2; 栅电极5; 以及设置在基底2和栅极电极5之间的栅极绝缘膜3.栅极绝缘膜3由含有硅，氧以及作为主要材料的硅和氧以外的元素X的绝缘性无机材料形成。 栅极绝缘膜3设置成与基底2接触，并且含有氢原子。 栅极绝缘膜3具有区域，其中A和B满足以下关系：在区域中的元素X的总浓度定义为A的情况下，B / A为10以下，并且该区域中的氢的总浓度 被定义为B.此外，该区域至少在栅极绝缘膜3的厚度方向上分开。
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9.发明授权公开(公告)号：US07943401B2
公开(公告)日：2011-05-17
申请号：US12114587
申请日：2008-05-02
IPC分类号： H01L21/66
摘要： Methods for detecting the breakdown potential of a semiconductor device having a thin dielectric layer are disclosed. The method includes measuring a spectroscopy of the thin dielectric layer and determining whether the spectroscopy exhibits the presence of a breakdown precursor (H2, H interstitial radical, H attached radical, and H attached dimer). Preferably, the method is carried out in the presence of a substantially significant applied electric field across dielectric layer. A semiconductor device tested in accordance with this method is also disclosed. Additionally, methods for reducing dielectric breakdown of a semiconductor device having a thin dielectric layer involving the substitution of a second molecule for H2 molecules present in the dielectric. This second molecule preferably does not react with Si or O to form an undesired attached state and may be an inert gas having a molecular size approximating that of a Hydrogen atom, such as Helium. A semiconductor device made using this method is also disclosed.
摘要翻译： 公开了一种用于检测具有薄介电层的半导体器件的击穿电位的方法。 该方法包括测量薄介电层的光谱，并确定光谱是否表现出分解前体（H2，H间隙自由基，H连接基团和H连接的二聚体）的存在。 优选地，该方法在跨介电层的基本上有效的施加电场的存在下进行。 还公开了根据该方法测试的半导体器件。 另外，用于减少具有薄介电层的半导体器件的电介质击穿的方法涉及电介质中存在的用于H 2分子的第二分子的取代。 该第二分子优选不与Si或O反应以形成不期望的附着状态，并且可以是分子大小接近氢原子如氦的惰性气体。 还公开了使用该方法制造的半导体器件。
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10.发明申请公开(公告)号：US20080211500A1
公开(公告)日：2008-09-04
申请号：US12114587
申请日：2008-05-02
摘要： Methods for detecting the breakdown potential of a semiconductor device having a thin dielectric layer are disclosed. The method includes measuring a spectroscopy of the thin dielectric layer and determining whether the spectroscopy exhibits the presence of a breakdown precursor (H2, H interstitial radical, H attached radical, and H attached dimer). Preferably, the method is carried out in the presence of a substantially significant applied electric field across dielectric layer. A semiconductor device tested in accordance with this method is also disclosed. Additionally, methods for reducing dielectric breakdown of a semiconductor device having a thin dielectric layer involving the substitution of a second molecule for H2 molecules present in the dielectric. This second molecule preferably does not react with Si or O to form an undesired attached state and may be an inert gas having a molecular size approximating that of a Hydrogen atom, such as Helium. A semiconductor device made using this method is also disclosed.
摘要翻译： 公开了一种用于检测具有薄介电层的半导体器件的击穿电位的方法。 该方法包括测量薄介电层的光谱，并确定光谱是否表现出分解前体（H 2 H 2，H间隙自由基，H连接基团和H连接的二聚体）的存在。 优选地，该方法在跨介电层的基本上有效的施加电场的存在下进行。 还公开了根据该方法测试的半导体器件。 另外，用于减小具有薄介电层的半导体器件的电介质击穿的方法涉及电介质中存在的H 2 H 2分子的第二分子。 该第二分子优选不与Si或O反应以形成不期望的附着状态，并且可以是分子大小接近氢原子如氦的惰性气体。 还公开了使用该方法制造的半导体器件。
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