公开(公告)号：US20060228822A1

公开(公告)日：2006-10-12

申请号：US11389233

申请日：2006-03-27

申请人： Masahiko Hayakawa ,  Shuhei Yoshitomi ,  Ryo Tokumaru

发明人： Masahiko Hayakawa ,  Shuhei Yoshitomi ,  Ryo Tokumaru

IPC分类号： H01L21/00

CPC分类号： H01L27/3244 ,  G09G3/3233 ,  G09G2320/029 ,  G09G2320/041 ,  G09G2320/043 ,  H01L51/5012 ,  H01L2251/5315 ,  H01L2251/5323

摘要： A display device having a first light-emitting element, a second light-emitting element, a constant current source, and an amplifier is provided. Each of the first light-emitting element and the second light-emitting element has a first layer including an organic compound and an inorganic compound and a second layer including a light-emitting substance, which are stacked between a pair of electrodes. The first layer is provided over the second layer. Alternatively, the second layer is provided over the first layer.

摘要翻译： 提供具有第一发光元件，第二发光元件，恒流源和放大器的显示装置。 第一发光元件和第二发光元件中的每一个具有堆叠在一对电极之间的包含有机化合物和无机化合物的第一层和包括发光物质的第二层。 第一层设置在第二层之上。 或者，第二层设置在第一层上。

公开(公告)号：US07777232B2

公开(公告)日：2010-08-17

申请号：US11389233

申请日：2006-03-27

申请人： Masahiko Hayakawa ,  Shuhei Yoshitomi ,  Ryo Tokumaru

发明人： Masahiko Hayakawa ,  Shuhei Yoshitomi ,  Ryo Tokumaru

IPC分类号： H01L21/00

CPC分类号： H01L27/3244 ,  G09G3/3233 ,  G09G2320/029 ,  G09G2320/041 ,  G09G2320/043 ,  H01L51/5012 ,  H01L2251/5315 ,  H01L2251/5323

摘要： A display device having a first light-emitting element, a second light-emitting element, a constant current source, and an amplifier is provided. Each of the first light-emitting element and the second light-emitting element has a first layer including an organic compound and an inorganic compound and a second layer including a light-emitting substance, which are stacked between a pair of electrodes. The first layer is provided over the second layer. Alternatively, the second layer is provided over the first layer.

摘要翻译： 提供具有第一发光元件，第二发光元件，恒流源和放大器的显示装置。 第一发光元件和第二发光元件中的每一个具有堆叠在一对电极之间的包含有机化合物和无机化合物的第一层和包括发光物质的第二层。 第一层设置在第二层之上。 或者，第二层设置在第一层上。

公开(公告)号：US08916425B2

公开(公告)日：2014-12-23

申请号：US13184589

申请日：2011-07-18

申请人： Ryota Tajima ,  Tetsuhiro Tanaka ,  Takashi Ohtsuki ,  Ryo Tokumaru ,  Yuji Egi ,  Erika Kato ,  Miyako Morikubo

发明人： Ryota Tajima ,  Tetsuhiro Tanaka ,  Takashi Ohtsuki ,  Ryo Tokumaru ,  Yuji Egi ,  Erika Kato ,  Miyako Morikubo

IPC分类号： H01L21/00 ,  C30B29/08 ,  H01L29/786 ,  H01L29/04 ,  C30B29/06 ,  C30B25/18 ,  C30B25/10

CPC分类号： H01L29/78696 ,  C30B25/105 ,  C30B25/183 ,  C30B29/06 ,  C30B29/08 ,  H01L29/04 ,  H01L29/78618 ,  H01L29/78648

摘要： A seed crystal including mixed phase grains having high crystallinity with a low grain density is formed under a first condition, and a microcrystalline semiconductor film is formed over the seed crystal under a second condition which allows the mixed phase grains in the seed crystal to grow to fill a space between the mixed phase grains. In the first condition, the flow rate of hydrogen is 50 times or greater and 1000 times or less that of a deposition gas containing silicon or germanium, and the pressure in a process chamber is greater than 1333 Pa and 13332 Pa or less. In the second condition, the flow rate of hydrogen is 100 times or greater and 2000 times or less that of a deposition gas containing silicon or germanium, and the pressure in the process chamber is 1333 Pa or greater and 13332 Pa or less.

摘要翻译： 在第一条件下形成包括具有低晶粒密度的高结晶度的混合相晶粒的晶种，并且在第二条件下在晶种上形成微晶半导体膜，所述第二条件允许晶种中的混晶相生长至 填充混合晶粒之间的空间。 在第一条件下，氢气的流量为含有硅或锗的沉积气体的50倍以上且1000倍以下，处理室中的压力大于1333Pa，13332Pa以下。 在第二条件下，氢气的流量为含有硅或锗的沉积气体的100倍以上且2000倍以下，处理室内的压力为1333Pa以上且13332Pa以下。

公开(公告)号：US08828859B2

公开(公告)日：2014-09-09

申请号：US13368379

申请日：2012-02-08

申请人： Tetsuhiro Tanaka ,  Ryo Tokumaru ,  Takashi Ohtsuki ,  Ryota Tajima ,  Erika Kato

发明人： Tetsuhiro Tanaka ,  Ryo Tokumaru ,  Takashi Ohtsuki ,  Ryota Tajima ,  Erika Kato

IPC分类号： H01L21/3205 ,  H01L29/66 ,  H01L29/04 ,  H01L21/02 ,  H01L29/786

CPC分类号： H01L29/66765 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/0262 ,  H01L29/04 ,  H01L29/78648 ,  H01L29/78696

摘要： A microcrystalline semiconductor film is formed over a substrate using a plasma CVD apparatus which includes a reaction chamber in such a manner that a deposition gas and hydrogen are supplied to the reaction chamber in which the substrate is set between a first electrode and a second electrode; and plasma is generated in the reaction chamber by supplying high-frequency power to the first electrode. Note that the plasma density in a region overlapping with an end portion of the substrate in a region where the plasma is generated is set to be higher than that in a region which is positioned more on the inside than the region overlapping with the end portion of the substrate, so that the microcrystalline semiconductor film is formed over a region which is positioned more on the inside than the end portion of the substrate.

摘要翻译： 使用等离子体CVD装置在基板上形成微晶半导体膜，所述等离子体CVD装置包括反应室，使得将沉积气体和氢气供应到反应室中，其中基板设置在第一电极和第二电极之间; 并且通过向第一电极提供高频电力而在反应室中产生等离子体。 注意，在等离子体产生的区域中与衬底的端部重叠的区域中的等离子体密度设定为高于在位于更内侧的区域中的等离子体密度 使得微结晶半导体膜形成在位于比衬底的端部更靠内侧的区域上。

公开(公告)号：US08629445B2

公开(公告)日：2014-01-14

申请号：US13397705

申请日：2012-02-16

申请人： Tetsuhiro Tanaka ,  Ryo Tokumaru

发明人： Tetsuhiro Tanaka ,  Ryo Tokumaru

IPC分类号： H01L29/04 ,  H01L29/10 ,  H01L31/00 ,  H01L21/00 ,  H01L21/84

CPC分类号： H01L29/04 ,  H01L29/66765 ,  H01L29/78618 ,  H01L29/78696

摘要： Provided are a semiconductor device with less leakage current is reduced, a semiconductor device with both of high field effect mobility and low leakage current, an electronic appliance with low power consumption, and a manufacturing method of a semiconductor device in which leakage current can be reduced without an increase in the number of masks. The side surface of a semiconductor layer formed of a semiconductor film having high carrier mobility is not in contact with any of a source electrode and a drain electrode. Further, such a transistor structure is formed without an increase in the number of photomasks and can be applied to an electronic appliance.

摘要翻译： 提供了具有较小漏电流的半导体器件，具有高场效应迁移率和低漏电流两者的半导体器件，具有低功耗的电子器件，以及可以减少泄漏电流的半导体器件的制造方法 不增加面具数量。 由具有高载流子迁移率的半导体膜形成的半导体层的侧表面不与源电极和漏电极中的任何一个接触。 此外，这种晶体管结构形成而不增加光掩模的数量，并且可以应用于电子设备。

公开(公告)号：US20120304932A1

公开(公告)日：2012-12-06

申请号：US13550776

申请日：2012-07-17

申请人： Satoshi Toriumi ,  Ryota Tajima ,  Takashi Ohtsuki ,  Tetsuhiro Tanaka ,  Ryo Tokumaru ,  Mitsuhiro Ichijo ,  Kazutaka Kuriki ,  Tomokazu Yokoi ,  Toshiya Endo ,  Shunpei Yamazaki

发明人： Satoshi Toriumi ,  Ryota Tajima ,  Takashi Ohtsuki ,  Tetsuhiro Tanaka ,  Ryo Tokumaru ,  Mitsuhiro Ichijo ,  Kazutaka Kuriki ,  Tomokazu Yokoi ,  Toshiya Endo ,  Shunpei Yamazaki

IPC分类号： C23C16/448

CPC分类号： H01J37/32541 ,  C23C16/24 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/5096 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32834 ,  H01L21/0262 ,  H01L29/66765 ,  H01L29/78696

摘要： An object of the present invention is to provide a technique for manufacturing a dense crystalline semiconductor film without a cavity between crystal grains. A plasma region is formed between a first electrode and a second electrode by supplying high-frequency power of 60 MHz or less to the first electrode under a condition where a pressure of a reactive gas in a reaction chamber of a plasma CVD apparatus is set to 450 Pa to 13332 Pa, and a distance between the first electrode and the second electrode of the plasma CVD apparatus is set to 1 mm to 20 mm; crystalline deposition precursors are formed in a gas phase including the plasma region; a crystal nucleus of 5 nm to 15 nm is formed by depositing the deposition precursors; and a microcrystalline semiconductor film is formed by growing a crystal from the crystal nucleus.

摘要翻译： 本发明的目的是提供一种在晶粒之间没有空腔的致密结晶半导体膜的制造技术。 在等离子体CVD装置的反应室中的反应气体的压力设定为：将第一电极和第二电极的反应气体的压力设定为第一电极的状态下，向第一电极供给60MHz以下的高频电力，在第一电极与第二电极之间形成等离子体区域 450Pa〜13332Pa，等离子体CVD装置的第一电极和第二电极之间的距离设定为1mm〜20mm; 在包括等离子体区域的气相中形成结晶沉积前体; 通过沉积沉积前体形成5nm至15nm的晶核; 并且通过从晶核生长晶体形成微晶半导体膜。

公开(公告)号：US08252669B2

公开(公告)日：2012-08-28

申请号：US12860175

申请日：2010-08-20

申请人： Satoshi Toriumi ,  Ryota Tajima ,  Takashi Ohtsuki ,  Tetsuhiro Tanaka ,  Ryo Tokumaru ,  Mitsuhiro Ichijo ,  Kazutaka Kuriki ,  Tomokazu Yokoi ,  Toshiya Endo ,  Shunpei Yamazaki

发明人： Satoshi Toriumi ,  Ryota Tajima ,  Takashi Ohtsuki ,  Tetsuhiro Tanaka ,  Ryo Tokumaru ,  Mitsuhiro Ichijo ,  Kazutaka Kuriki ,  Tomokazu Yokoi ,  Toshiya Endo ,  Shunpei Yamazaki

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01J37/32541 ,  C23C16/24 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/5096 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32834 ,  H01L21/0262 ,  H01L29/66765 ,  H01L29/78696

摘要： An object of one embodiment of the present invention is to provide a technique for manufacturing a dense crystalline semiconductor film (e.g., a microcrystalline semiconductor film) without a cavity between crystal grains. A plasma region is formed between a first electrode and a second electrode by supplying high-frequency power of 60 MHz or less to the first electrode under a condition where a pressure of a reactive gas in a reaction chamber of a plasma CVD apparatus is set to 450 Pa to 13332 Pa, and a distance between the first electrode and the second electrode of the plasma CVD apparatus is set to 1 mm to 20 mm; crystalline deposition precursors are formed in a gas phase including the plasma region; a crystal nucleus of 5 nm to 15 nm is formed by depositing the deposition precursors; and a microcrystalline semiconductor film is formed by growing a crystal from the crystal nucleus.

摘要翻译： 本发明的一个实施例的目的是提供一种在晶粒之间没有空腔的致密结晶半导体膜（例如，微晶半导体膜）的制造技术。 在等离子体CVD装置的反应室中的反应气体的压力设定为：将第一电极和第二电极的反应气体的压力设定为第一电极的状态下，向第一电极供给60MHz以下的高频电力，在第一电极与第二电极之间形成等离子体区域 450Pa〜13332Pa，等离子体CVD装置的第一电极和第二电极之间的距离设定为1mm〜20mm; 在包括等离子体区域的气相中形成结晶沉积前体; 通过沉积沉积前体形成5nm至15nm的晶核; 并且通过从晶核生长晶体形成微晶半导体膜。

公开(公告)号：US08557687B2

公开(公告)日：2013-10-15

申请号：US12838023

申请日：2010-07-16

申请人： Ryota Tajima ,  Tetsuhiro Tanaka ,  Ryo Tokumaru ,  Hidekazu Miyairi ,  Mitsuhiro Ichijo ,  Taichi Nozawa

发明人： Ryota Tajima ,  Tetsuhiro Tanaka ,  Ryo Tokumaru ,  Hidekazu Miyairi ,  Mitsuhiro Ichijo ,  Taichi Nozawa

IPC分类号： H01L21/20 ,  C23C16/24 ,  C23C16/00

CPC分类号： H01L21/0262 ,  C23C16/24 ,  C23C16/28 ,  C23C16/45523 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02595 ,  H01L29/78669 ,  H01L29/78678 ,  H01L29/78684

摘要： A microcrystalline semiconductor film having a high crystallinity is formed. Further, a thin film transistor having preferable electric characteristics and high reliability and a display device including the thin film transistor are manufactured with high mass productivity. A step in which a deposition gas containing silicon or germanium is introduced at a first flow rate and a step in which the deposition gas containing silicon or germanium is introduced at a second flow rate are repeated while hydrogen is introduced at a fixed rate, so that the hydrogen and the deposition gas containing silicon or germanium are mixed, and a high-frequency power is supplied. Therefore, a microcrystalline semiconductor film is formed over a substrate.

摘要翻译： 形成具有高结晶度的微晶半导体膜。 此外，具有优选的电特性和高可靠性的薄膜晶体管和包括薄膜晶体管的显示装置以高生产率制造。 以第一流量引入包含硅或锗的沉积气体的步骤，并且以固定速率引入氢气，并且以固定速率引入氢气，并且以第二流量引入含有硅或锗的沉积气体的步骤，从而 将含有硅或锗的氢气和沉积气体混合，供给高频电力。 因此，在基板上形成微晶半导体膜。

公开(公告)号：US08476638B2

公开(公告)日：2013-07-02

申请号：US13550776

申请日：2012-07-17

申请人： Satoshi Toriumi ,  Ryota Tajima ,  Takashi Ohtsuki ,  Tetsuhiro Tanaka ,  Ryo Tokumaru ,  Mitsuhiro Ichijo ,  Kazutaka Kuriki ,  Tomokazu Yokoi ,  Toshiya Endo ,  Shunpei Yamazaki

发明人： Satoshi Toriumi ,  Ryota Tajima ,  Takashi Ohtsuki ,  Tetsuhiro Tanaka ,  Ryo Tokumaru ,  Mitsuhiro Ichijo ,  Kazutaka Kuriki ,  Tomokazu Yokoi ,  Toshiya Endo ,  Shunpei Yamazaki

IPC分类号： H01L29/04 ,  H01L31/036

CPC分类号： H01J37/32541 ,  C23C16/24 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/5096 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32834 ,  H01L21/0262 ,  H01L29/66765 ,  H01L29/78696

摘要： An object of the present invention is to provide a technique for manufacturing a dense crystalline semiconductor film without a cavity between crystal grains. A plasma region is formed between a first electrode and a second electrode by supplying high-frequency power of 60 MHz or less to the first electrode under a condition where a pressure of a reactive gas in a reaction chamber of a plasma CVD apparatus is set to 450 Pa to 13332 Pa, and a distance between the first electrode and the second electrode of the plasma CVD apparatus is set to 1 mm to 20 mm; crystalline deposition precursors are formed in a gas phase including the plasma region; a crystal nucleus of 5 nm to 15 nm is formed by depositing the deposition precursors; and a microcrystalline semiconductor film is formed by growing a crystal from the crystal nucleus.

摘要翻译： 本发明的目的是提供一种在晶粒之间没有空腔的致密结晶半导体膜的制造技术。 在等离子体CVD装置的反应室中的反应气体的压力设定为：将第一电极和第二电极的反应气体的压力设定为第一电极的状态下，向第一电极供给60MHz以下的高频电力，在第一电极和第二电极之间形成等离子体区域 450Pa〜13332Pa，等离子体CVD装置的第一电极和第二电极之间的距离设定为1mm〜20mm; 在包括等离子体区域的气相中形成结晶沉积前体; 通过沉积沉积前体形成5nm至15nm的晶核; 并且通过从晶核生长晶体形成微晶半导体膜。

公开(公告)号：US20120211809A1

公开(公告)日：2012-08-23

申请号：US13397705

申请日：2012-02-16

申请人： Tetsuhiro Tanaka ,  Ryo Tokumaru

发明人： Tetsuhiro Tanaka ,  Ryo Tokumaru

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/04 ,  H01L29/66765 ,  H01L29/78618 ,  H01L29/78696

摘要： Provided are a semiconductor device with less leakage current is reduced, a semiconductor device with both of high field effect mobility and low leakage current, an electronic appliance with low power consumption, and a manufacturing method of a semiconductor device in which leakage current can be reduced without an increase in the number of masks. The side surface of a semiconductor layer formed of a semiconductor film having high carrier mobility is not in contact with any of a source electrode and a drain electrode. Further, such a transistor structure is formed without an increase in the number of photomasks and can be applied to an electronic appliance.

摘要翻译： 提供了具有较小漏电流的半导体器件，具有高场效应迁移率和低漏电流两者的半导体器件，具有低功耗的电子器件，以及可以减少泄漏电流的半导体器件的制造方法 不增加面具数量。 由具有高载流子迁移率的半导体膜形成的半导体层的侧表面不与源电极和漏电极中的任何一个接触。 此外，这种晶体管结构形成而不增加光掩模的数量，并且可以应用于电子设备。