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    Method for manufacturing semiconductor substrate
    5.
    发明授权
    Method for manufacturing semiconductor substrate 有权
    半导体衬底的制造方法

    公开(公告)号：US08273611B2

    公开(公告)日：2012-09-25

    申请号：US12840379

    申请日：2010-07-21

    申请人： Tetsuya Kakehata ,  Kazutaka Kuriki

    发明人： Tetsuya Kakehata ,  Kazutaka Kuriki

    IPC分类号： H01L21/762

    CPC分类号： H01L21/76254

    摘要： A single crystal semiconductor layer is formed over a substrate having an insulating surface by the following steps: forming an ion doped layer at a given depth from a surface of a single crystal semiconductor substrate; performing plasma treatment to the surface of the single crystal semiconductor substrate; forming an insulating layer on the single crystal semiconductor substrate to which the plasma treatment is performed; bonding the single crystal semiconductor substrate to the substrate having the insulating surface with an insulating layer interposed therebetween; and separating the single crystal semiconductor substrate using the ion doped layer as a separation surface. As a result, a semiconductor substrate in which a defect in an interface between the single crystal semiconductor layer and the insulating layer is reduced can be provided.

    摘要翻译： 通过以下步骤在具有绝缘表面的衬底上形成单晶半导体层：从单晶半导体衬底的表面形成在给定深度处的离子掺杂层; 对所述单晶半导体衬底的表面进行等离子体处理; 在进行等离子体处理的单晶半导体基板上形成绝缘层; 将单晶半导体衬底与绝缘表面的衬底接合在绝缘层之间; 以及使用离子掺杂层作为分离表面分离单晶半导体衬底。 结果，可以提供其中单晶半导体层和绝缘层之间的界面的缺陷减小的半导体衬底。

    POWER STORAGE DEVICE
    6.
    发明申请
    POWER STORAGE DEVICE 有权
    电源存储设备

    公开(公告)号：US20120141866A1

    公开(公告)日：2012-06-07

    申请号：US13307045

    申请日：2011-11-30

    申请人： Kazutaka KURIKI ,  Nobuhiro Inoue ,  Kiyofumi Ogino

    发明人： Kazutaka KURIKI ,  Nobuhiro Inoue ,  Kiyofumi Ogino

    IPC分类号： H01M4/66 ,  H01M10/02 ,  H01G9/032

    CPC分类号： H01M4/366 ,  H01G11/06 ,  H01G11/50 ,  H01G11/68 ,  H01G11/72 ,  H01M4/382 ,  H01M4/386 ,  H01M4/661 ,  H01M10/0525 ,  H01M10/0562 ,  H01M2004/027 ,  Y02E60/122 ,  Y02E60/13 ,  Y02T10/7022

    摘要： A power storage device which has improved performance such as higher discharge capacity and in which deterioration due to peeling or the like of an active material layer is less likely to be caused is provided. In an electrode for the power storage device, phosphorus-doped amorphous silicon is used for the active material layer over a current collector as a material that can be alloyed with lithium, and niobium oxide is deposited over the active material layer as a layer containing niobium. Accordingly, the capacity of the power storage device can be increased and the cycle characteristics and the charge-discharge efficiency can be improved.

    摘要翻译： 提供了一种具有改善的性能的蓄电装置，例如较高的放电容量，并且由于活性材料层的剥离等而导致的劣化不大可能。 在蓄电装置的电极中，作为可与锂合金化的材料，在集电体上使用磷掺杂非晶硅作为活性物质层，在活性物质层上沉积氧化铌作为含有铌的层 。 因此，能够提高蓄电装置的容量，能够提高循环特性和充放电效率。

    POWER STORAGE DEVICE
    7.
    发明申请
    POWER STORAGE DEVICE 有权
    电源存储设备

    公开(公告)号：US20110305950A1

    公开(公告)日：2011-12-15

    申请号：US13153503

    申请日：2011-06-06

    申请人： Kazutaka KURIKI ,  Kiyofumi OGINO ,  Tomokazu YOKOI ,  Makoto ISHIKAWA ,  Toshihiko TAKEUCHI

    发明人： Kazutaka KURIKI ,  Kiyofumi OGINO ,  Tomokazu YOKOI ,  Makoto ISHIKAWA ,  Toshihiko TAKEUCHI

    IPC分类号： H01M4/64 ,  H01G9/042 ,  H01M10/04

    CPC分类号： H01G11/26 ,  H01M4/134 ,  H01M4/661 ,  H01M4/667 ,  H01M10/0525 ,  H01M2004/025 ,  Y02E60/122 ,  Y02E60/13

    摘要： An electrode for a power storage device with less deterioration due to charge and discharge and a power storage device using the electrode are provided. In the electrode for a power storage device and the power storage device, a region including a metal element which functions as a catalyst is selectively provided over a current collector, and then, an active material layer is formed. By selectively providing the region including the metal element, a whisker can be effectively generated in the active material layer over the current collector, and the whisker generation region can be controlled. Accordingly, the discharge capacity can be increased and the cycle characteristics can be improved.

    摘要翻译： 提供了一种用于蓄电装置的放电劣化少的电极和使用该电极的蓄电装置。 在蓄电装置用电极和蓄电装置中，在集电体上选择性地设置作为催化剂的金属元素的区域，形成活性物质层。 通过选择性地提供包括金属元素的区域，可以在集电体上的有源材料层中有效地产生晶须，并且可以控制晶须产生区域。 因此，可以提高放电容量，并且可以提高循环特性。

    MANUFACTURING METHOD OF SINGLE CRYSTAL SEMICONDUCTOR FILM AND MANUFACTURING METHOD OF ELECTRODE
    8.
    发明申请
    MANUFACTURING METHOD OF SINGLE CRYSTAL SEMICONDUCTOR FILM AND MANUFACTURING METHOD OF ELECTRODE 有权
    单晶半导体膜的制造方法及电极的制造方法

    公开(公告)号：US20110269301A1

    公开(公告)日：2011-11-03

    申请号：US13092249

    申请日：2011-04-22

    申请人： Sho KATO ,  Kazutaka KURIKI

    发明人： Sho KATO ,  Kazutaka KURIKI

    IPC分类号： H01L21/20

    CPC分类号： H01L21/76251

    摘要： To provide a method of obtaining a single crystal semiconductor film by a method that is simple and low-cost. A single crystal semiconductor film 11 having compression stress is formed over a surface of a single crystal semiconductor substrate 10 by a vapor phase epitaxial growth method, a film having tensile stress (for example, a thermo-setting resin film 12) is formed over a surface of the single crystal semiconductor film 11, and the single crystal semiconductor substrate 10 and the single crystal semiconductor film 11 are separated from each other by a separation step in which force is applied to the single crystal semiconductor film 11, thereby obtaining a single crystal semiconductor film. Note that as the thermo-setting resin film 12, an epoxy resin film can be used, for example.

    摘要翻译： 提供通过简单且低成本的方法获得单晶半导体膜的方法。 通过气相外延生长法在单晶半导体衬底10的表面上形成具有压应力的单晶半导体膜11，在其上形成具有拉伸应力的膜（例如，热固性树脂膜12） 通过对单晶半导体膜11施加力的分离工序将单晶半导体膜11的表面，单晶半导体基板10和单晶半导体膜11分离，得到单晶 半导体膜。 另外，作为热固性树脂膜12，例如可以使用环氧树脂膜。

    SECONDARY BATTERY AND METHOD FOR MANUFACTURING ELECTRODE OF THE SAME
    9.
    发明申请
    SECONDARY BATTERY AND METHOD FOR MANUFACTURING ELECTRODE OF THE SAME 有权
    二次电池及其制造方法

    公开(公告)号：US20110236753A1

    公开(公告)日：2011-09-29

    申请号：US13044172

    申请日：2011-03-09

    申请人： Kazutaka KURIKI ,  Tamae MORIWAKA

    发明人： Kazutaka KURIKI ,  Tamae MORIWAKA

    IPC分类号： H01M4/58 ,  H01M4/26

    CPC分类号： H01M4/134 ,  H01M4/0428 ,  H01M4/0471 ,  H01M4/1395 ,  H01M4/38 ,  H01M4/661 ,  H01M4/662 ,  H01M4/667 ,  Y10T29/49108 ,  Y10T29/49115

    摘要： A secondary battery to be provided includes an electrode including silicon or a silicon compound, and the electrode includes, for example, a current collector formed using metal and a silicon film as an active material provided over the current collector. The hydrogen concentration in the silicon film of the electrode may be higher than or equal to 1.0×1018 cm−3 and lower than or equal to 1.0×1021 cm−3. Such a silicon film is formed over a current collector by a plasma CVD method or the like for example, and hydrogen is contained as little as possible in the silicon film, which is preferable. In order to contain hydrogen as little as possible in the silicon film, the silicon film may be formed over the current collector under a high temperature environment.

    摘要翻译： 要提供的二次电池包括含硅或硅化合物的电极，并且该电极包括例如使用金属形成的集电体和设置在集电体上的活性材料的硅膜。 电极的硅膜中的氢浓度可以高于或等于1.0×1018cm-3且小于或等于1.0×1021cm-3。 这样的硅膜例如通过等离子体CVD法等在集电体上形成，并且在硅膜中尽可能少地含有氢，这是优选的。 为了在硅膜中尽可能少地含有氢，可以在高温环境下在集电体上形成硅膜。

    Semiconductor substrate, method for manufacturing semiconductor substrate, semiconductor device, and electronic device
    10.
    发明授权
    Semiconductor substrate, method for manufacturing semiconductor substrate, semiconductor device, and electronic device 失效
    半导体衬底，半导体衬底的制造方法，半导体器件和电子器件

    公开(公告)号：US07763502B2

    公开(公告)日：2010-07-27

    申请号：US12213308

    申请日：2008-06-18

    申请人： Tetsuya Kakehata ,  Kazutaka Kuriki

    发明人： Tetsuya Kakehata ,  Kazutaka Kuriki

    IPC分类号： H01L21/30

    CPC分类号： H01L21/76254

    摘要： A single crystal semiconductor layer is formed over a substrate having an insulating surface by the following steps: forming an ion doped layer at a given depth from a surface of a single crystal semiconductor substrate; performing plasma treatment to the surface of the single crystal semiconductor substrate; forming an insulating layer on the single crystal semiconductor substrate to which the plasma treatment is performed; bonding the single crystal semiconductor substrate to the substrate having the insulating surface with an insulating layer interposed therebetween; and separating the single crystal semiconductor substrate using the ion doped layer as a separation surface. As a result, a semiconductor substrate in which a defect in an interface between the single crystal semiconductor layer and the insulating layer is reduced can be provided.

    摘要翻译： 通过以下步骤在具有绝缘表面的衬底上形成单晶半导体层：从单晶半导体衬底的表面形成在给定深度处的离子掺杂层; 对所述单晶半导体衬底的表面进行等离子体处理; 在进行等离子体处理的单晶半导体基板上形成绝缘层; 将单晶半导体衬底与绝缘表面的衬底接合在绝缘层之间; 以及使用离子掺杂层作为分离表面分离单晶半导体衬底。 结果，可以提供其中单晶半导体层和绝缘层之间的界面的缺陷减小的半导体衬底。