MEMORY DEVICE AND OPERATION METHOD THEREOF
    1.
    发明公开

    公开(公告)号:US20230161556A1

    公开(公告)日:2023-05-25

    申请号:US17701725

    申请日:2022-03-23

    摘要: A memory device and an operation method thereof are provided. The operation method includes: encoding an input data, sending an encoded input data to at least one page buffer, and reading out the encoded input data in parallel; encoding a first part and a second part of a weight data into an encoded first part and an encoded second part of the weight data, respectively, writing the encoded first part and the encoded second part of the weight data into a plurality of memory cells of the memory device, and reading out the encoded first part and the encoded second part of the weight data in parallel; multiplying the encoded input data with the encoded first part and the encoded second part of the weight data respectively to parallel generate a plurality of partial products; and accumulating the partial products to generate an operation result.

    IN-MEMORY COMPUTING METHOD AND APPARATUS

    公开(公告)号:US20210326114A1

    公开(公告)日:2021-10-21

    申请号:US17217482

    申请日:2021-03-30

    摘要: An in-memory computing method and apparatus, adapted for a processor to perform MAC operations on a memory, are provided. In the method, a format of binary data of weights is transformed from a floating-point format into a quantized format by truncating at least a portion of fraction bits of the binary data and calculating complements of remaining bits, and programming the transformed binary data into cells of the memory. A tuning procedure is performed by iteratively inputting binary data of input signals into the memory, integrating outputs of the memory, and adjusting the weights programmed to the cells based on the integrated outputs. The binary data of the weights is reshaped based on a probability of reducing bits with a value of one in the binary data of each weight. The tuning procedure is repeated until an end condition is met.

    Memory device and operating method thereof

    公开(公告)号:US11966628B2

    公开(公告)日:2024-04-23

    申请号:US17830471

    申请日:2022-06-02

    IPC分类号: G06F3/06

    摘要: A memory device, includes a memory array for storing a plurality of vector data each of which has an MSB vector and a LSB vector. The memory array includes a plurality of memory units each of which has a first bit and a second bit. The first bit is used to store the MSB vector of each vector data, the second bit is used to store the LSB vector of each vector data. A bit line corresponding to each vector data executes one time of bit-line-setup, and reads the MSB vector and the LSB vector of each vector data according to the bit line. The threshold voltage distribution of each memory unit is divided into N states, where N is a positive integer and N is less than 2 to the power of 2, and the effective bit number stored by each memory unit is less than 2.

    MEMORY MANAGEMENT APPARATUS AND MEMORY MANAGEMENT METHOD

    公开(公告)号:US20200319803A1

    公开(公告)日:2020-10-08

    申请号:US16742811

    申请日:2020-01-14

    IPC分类号: G06F3/06 G06F16/901 G06F12/10

    摘要: A memory management method includes: performing a bloom filtering operation on a plurality of logic block addresses to determine a read and written frequency of each of the logic block addresses; setting a first program/erase (P/E) cycle threshold and a second P/E cycle threshold value, wherein the first P/E cycle threshold value is smaller than the second P/E cycle threshold value; dividing each of physical memory blocks into a first type memory block, a second type memory block or a third type memory block according to the first P/E cycle threshold value and the second P/E cycle threshold value; and, allocating each of the logic block addresses to the first type memory block, the second type memory block or the third type memory block according to the read and written frequency of corresponding logic block addresses.

    Memory device and operation method thereof

    公开(公告)号:US11640255B2

    公开(公告)日:2023-05-02

    申请号:US17518624

    申请日:2021-11-04

    IPC分类号: G06F12/00 G06F3/06

    摘要: Disclosed is a memory device and an operation method thereof. The operation method of memory device, comprising: programming a plurality of sub-matrices including at least one of non-zero element of a rearranged matrix to a plurality of operation units of the memory device; and programming a mapping table into a working memory of a memory device. The rearranged matrix is generated by rearrange a plurality of columns and a plurality of rows of an original matrix according to the positions of a plurality of non-zero elements of the original matrix. The mapping table comprises a correspondence of row indexes between the original matrix and the rearranged matrix, a correspondence of column indexes between the original matrix and the rearranged matrix and a correspondence between the sub-matrices including at least one non-zero element and the operation units storing the sub-matrices including at least one non-zero element.

    Memory device for neural networks

    公开(公告)号:US11526285B2

    公开(公告)日:2022-12-13

    申请号:US16564066

    申请日:2019-09-09

    IPC分类号: G06F3/06 G06N3/04

    摘要: A memory device includes: a memory array used for implementing neural networks (NN), the NN including a plurality of layers; and a controller coupled to the memory array, the controller being configured for: determining a computation duration of a first data of a first layer of the plurality of layers; selecting a first program operation if the computation duration of the first data of the first layer is shorter than a threshold; and selecting a second program operation if the computation duration of the first data of the first layer is longer than the threshold, wherein the second program operation has a longer program pulse time than the first program operation.

    Memory device and operation method thereof

    公开(公告)号:US12056361B2

    公开(公告)日:2024-08-06

    申请号:US17814888

    申请日:2022-07-26

    IPC分类号: G06F12/00 G06F3/06

    摘要: An embodiment of the present disclosure discloses a memory device. The memory device comprises a memory controller, a buffer and a memory array. The buffer is coupled to the memory controller or embedded in the memory controller. A storage space of the buffer is configured by the memory controller to include a plurality of groups. The memory array is coupled to the memory controller, and comprising a plurality of tiles. The groups are one-to-one corresponding to the tiles. Each of the groups is configured to store data to be written into the corresponding tile. The memory controller performs one or more write operations based on the groups.