- 专利标题: Memory device and operation method thereof
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申请号: US17518624申请日: 2021-11-04
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公开(公告)号: US11640255B2公开(公告)日: 2023-05-02
- 发明人: Wei-Chen Wang , Ting-Hsuan Lo , Chun-Feng Wu , Yuan-Hao Chang , Tei-Wei Kuo
- 申请人: MACRONIX INTERNATIONAL CO., LTD.
- 申请人地址: TW Hsinchu
- 专利权人: MACRONIX INTERNATIONAL CO., LTD.
- 当前专利权人: MACRONIX INTERNATIONAL CO., LTD.
- 当前专利权人地址: TW Hsinchu
- 代理机构: McClure, Qualey & Rodack, LLP
- 主分类号: G06F12/00
- IPC分类号: G06F12/00 ; G06F3/06
摘要:
Disclosed is a memory device and an operation method thereof. The operation method of memory device, comprising: programming a plurality of sub-matrices including at least one of non-zero element of a rearranged matrix to a plurality of operation units of the memory device; and programming a mapping table into a working memory of a memory device. The rearranged matrix is generated by rearrange a plurality of columns and a plurality of rows of an original matrix according to the positions of a plurality of non-zero elements of the original matrix. The mapping table comprises a correspondence of row indexes between the original matrix and the rearranged matrix, a correspondence of column indexes between the original matrix and the rearranged matrix and a correspondence between the sub-matrices including at least one non-zero element and the operation units storing the sub-matrices including at least one non-zero element.
公开/授权文献
- US20220155959A1 MEMORY DEVICE AND OPERATION METHOD THEREOF 公开/授权日:2022-05-19
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