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    Boron carbide composite and production method therefor
    3.
    发明授权
    Boron carbide composite and production method therefor 有权

    公开(公告)号：US11634364B2

    公开(公告)日：2023-04-25

    申请号：US17184081

    申请日：2021-02-24

    申请人： KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

    发明人： Sang Whan Park ,  Mi Rae Youm ,  Sung Il Yun ,  Jun Hyung Park

    IPC分类号： C04B35/563 ,  C04B35/645

    摘要： The present disclosure provides a boron carbide composite material having a novel composition with excellent mechanical properties, and a production method therefor. The boron carbide composite material has high fracture toughness and may be applied as a lightweight bulletproof ceramic material. The boron carbide composite material is a boron carbide/silicon carbide/titanium boride/graphite (B4C—SiC—TiB2—C) composite material. The composite material may overcome a technical limitation on increasing the fracture toughness of the boron carbide composite material, and may be produced as a high-density boron carbide composite material using a reactive hot-pressing sintering process at a relatively low temperature. The boron carbide composite material having excellent mechanical properties may be applied to general industrial wear-resistant parts and nuclear-power-related industrial parts, and particularly, may be actively used as a lightweight bulletproof material for personal use and for military aircraft including helicopters.

    Porous silicon dioxide-carbon composite and method for preparing high-purity granular beta-phase silicon carbide powder with using the same
    4.
    发明授权
    Porous silicon dioxide-carbon composite and method for preparing high-purity granular beta-phase silicon carbide powder with using the same 有权

    公开(公告)号：US09994454B2

    公开(公告)日：2018-06-12

    申请号：US15075751

    申请日：2016-03-21

    申请人： KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

    发明人： Sang Whan Park ,  Mi Rae Youm ,  Sung Il Youn ,  Gyoung Sun Cho

    IPC分类号： C01B31/36 ,  C01B32/956

    CPC分类号： C01B32/956

    摘要： The present disclosure relates to porous silicon dioxide-carbon composites and a method for preparing high-purity β-phase silicon carbide granular powders using the same. More particularly, it relates to a method for preparing high-purity β-phase silicon carbide granular powders in accordance with a first step of preparing gel wherein carbon compounds are uniformly dispersed in silicon dioxide network structures generated by a sol-gel process using a silicon compound and a carbon compound in a liquid state as raw materials, a second step of preparing porous silicon dioxide-carbon composites, in which the carbon compounds are solidified, dried and then thermally treated to have a high specific area, and a third step of conducting both of a direct reaction between carbon and metallic silicon and a carbothermal reduction between carbon and silicon dioxide through a two-step treatment process of the prepared porous silicon dioxide-carbon composites powders with the added metallic silicon, wherein the average particle size, particle size distribution and purity of the silicon carbide powder can be adjusted by controlling a heating rate, a heat treatment temperature and time during the heat treatment process.

    Method for manufacturing SiC powders with high purity
    6.
    发明授权
    Method for manufacturing SiC powders with high purity 有权
    制造高纯度SiC粉末的方法

    公开(公告)号：US09487405B2

    公开(公告)日：2016-11-08

    申请号：US13826521

    申请日：2013-03-14

    申请人： KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

    发明人： Sang Whan Park ,  Kyoung Sop Han ,  Sung Ho Yun ,  Jin Oh Yang ,  Gyoung Sun Cho ,  Mi Rae Youm ,  Yung Chul Jo

    IPC分类号： C01B31/36

    CPC分类号： C01B31/36 ,  C01B32/956

    摘要： Disclosed herein is a method for manufacturing SiC powders with a high purity, and more particularly, a method for manufacturing SiC powders with a high purity by reating a solid phase carbon source as raw materials with gas phase silicon sources generated from a starting material composed of metallic silicon and silicon dioxide powders and, in which it is easy to control the size and crystalline phase of the SiC powders by changing the compositions of the gas phase silicon source to the solid phase carbon source mole ratio, and the temperature and time for the heat treatment.

    摘要翻译： 本发明公开了一种高纯度SiC粉末的制造方法，更具体地说，涉及一种以固相碳源为原料制造具有高纯度的SiC粉末的方法，所述SiC粉末是由由 金属硅和二氧化硅粉末，其中通过将气相硅源的组成改变为固相碳源摩尔比容易控制SiC粉末的尺寸和结晶相，并且其温度和时间 热处理。

    Method for preparing ultrahigh-purity silicon carbide powder
    8.
    发明授权
    Method for preparing ultrahigh-purity silicon carbide powder 有权

    公开(公告)号：US10106423B2

    公开(公告)日：2018-10-23

    申请号：US15072724

    申请日：2016-03-17

    申请人： KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

    发明人： Sang Whan Park ,  Mi Rae Youm ,  Sung Il Youn ,  Gyoung Sun Cho

    IPC分类号： C01B21/06 ,  C01B31/36

    摘要： The present invention relates to a method for preparing an ultrahigh-purity silicon carbide powder, more particularly to a method for preparing an ultrahigh-purity silicon carbide granular powder by preparing a gel wherein a silicon compound and a carbon compound are uniformly dispersed via a sol-gel process using a liquid state silicon compound and a solid or liquid state carbon compound of varying purities as raw materials, preparing a silicon dioxide-carbon (SiO2—C) composite by pyrolyzing the prepared gel, preparing a silicon carbide-silicon dioxide-carbon (SiC—SiO2—C) composite powder via two-step carbothermal reduction of the prepared silicon dioxide-carbon composite, adding a silicon metal and then conducting carbonization and carbothermal reduction at the same time by heat treating, thereby growing the synthesized silicon carbide particle with an increased yield of the silicon carbide.

    Methods for manufacturing of cobalt boride coating layer on surface of steels by using a pack cementation process
    10.
    发明授权
    Methods for manufacturing of cobalt boride coating layer on surface of steels by using a pack cementation process 有权
    通过使用包装胶结法在钢表面制造硼化钴涂层的方法

    公开(公告)号：US08974857B2

    公开(公告)日：2015-03-10

    申请号：US13675136

    申请日：2012-11-13

    申请人： Korea Institute of Science and Technology

    发明人： Jin Kook Yoon ,  Jung Man Doh ,  Sang Whan Park

    IPC分类号： C23C10/34 ,  C23C16/38 ,  B05D7/14 ,  C23C8/80 ,  C23C8/02 ,  C23C8/70 ,  C23C10/02 ,  C23C10/08 ,  C23C10/60

    CPC分类号： B05D7/14 ,  C23C8/02 ,  C23C8/70 ,  C23C8/80 ,  C23C10/02 ,  C23C10/08 ,  C23C10/60

    摘要： Disclosed is to a method for manufacturing a cobalt boride coating layer on the surface of iron-based metals by using a pack cementation process. In particular, the present invention relates to a method for manufacturing a cobalt boride coating layer by forming a composite coating layer on the surface of steels which is composed of an outmost layer having a composition of cobalt boride (Co2B) and an inner layer having a composition of iron-cobalt boride ((Fe,Co)2B). Since the cobalt boride coating layer is a compact coating layer having little defects such as pores, it can improve physical properties such as corrosion resistance, wear resistance and oxidation resistance of steels.

    摘要翻译： 公开了一种通过使用包装胶结法在铁基金属的表面上制造硼化钴涂层的方法。 特别地，本发明涉及通过在由具有钴硼化物（Co2B）组成的最外层和具有钴硼化物（Co2B）的内层的外层组成的钢表面上形成复合涂层而制造钴化钴涂层的方法， 钴铁硼钴（（Fe，Co）2B）的组成。 由于钴硼化物涂层是小孔等缺陷小的被覆层，因此能够提高钢的耐腐蚀性，耐磨性，耐氧化性等物性。