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    High refractive index hydrogenated silicon carbide and process
    2.
    发明授权
    High refractive index hydrogenated silicon carbide and process 有权

    公开(公告)号：US11142820B2

    公开(公告)日：2021-10-12

    申请号：US16250488

    申请日：2019-01-17

    申请人： Seagate Technology LLC

    发明人： Xiaoyue Huang ,  Deming Zhang ,  Minna Hovinen ,  Ziyou Zhou

    IPC分类号： C23C16/32 ,  G02B6/02 ,  C01B32/963 ,  C23C16/453

    摘要： In a method for depositing a layer of amorphous hydrogenated silicon carbide (SiC:H), a gas mixture comprising a reactive gas to inert gas volume ratio of 1:12 to 2:3 is introduced into a reaction chamber of a plasma-enhanced chemical vapor deposition apparatus. The reactive gas has a ratio of Si of 50 to 60, C of 3 to 13, and H of 32 to 42 at %. The inert gas comprises i) a first inert gas selected from helium, neon and mixtures; and ii) a second inert gas selected from argon, krypton, xenon and mixtures. The reaction plasma is at a power frequency of 1-16 MHz at a power level of 100 W to 700 W. The resulting layer exhibits a refractive index of not less than 2.4 and a loss of not more than 180 dB/cm at an indicated wavelength within 800 to 900 nm.

    Direct additive synthesis of diamond semiconductor
    3.
    发明授权
    Direct additive synthesis of diamond semiconductor 有权

    公开(公告)号：US11052647B2

    公开(公告)日：2021-07-06

    申请号：US15976753

    申请日：2018-05-10

    申请人： Lockheed Martin Corporation

    发明人： David Glen Findley

    IPC分类号： B33Y10/00 ,  H01L21/02 ,  C30B7/14 ,  H01L23/15 ,  B33Y30/00 ,  C30B29/36 ,  C30B29/04 ,  B28B1/00 ,  B33Y70/00 ,  C01B32/26 ,  C09D11/037 ,  C01B32/963 ,  C09D11/033 ,  C01B32/05

    摘要： In an embodiment, a system includes a three-dimensional (3D) printer, a neutral feedstock, a p-doped feedstock, an n-doped feedstock, and a laser. The 3D printer includes a platen and an enclosure. The platen includes an inert metal. The enclosure includes an inert atmosphere. The neutral feedstock is configured to be deposited onto the platen. The neutral feedstock includes a halogenated solution and a nanoparticle having a negative electron affinity. The p-doped feedstock is configured to be deposited onto the platen. The p-doped feedstock includes a boronated compound introduced to the neutral feedstock. The n-doped feedstock is configured to be deposited onto the platen. The n-doped feedstock includes a phosphorous compound introduced to the neutral feedstock. The laser is configured to induce the nanoparticle to emit solvated electrons into the halogenated solution to form, by reduction, layers of a ceramic comprising a neutral layer, a p-doped layer, and an n-doped layer.

    METHOD OF PURIFYING SILICON CARBIDE POWDER
    4.
    发明申请
    METHOD OF PURIFYING SILICON CARBIDE POWDER 有权

    公开(公告)号：US20210139330A1

    公开(公告)日：2021-05-13

    申请号：US16729065

    申请日：2019-12-27

    申请人： INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

    发明人： Ta-Ching HSIAO ,  Chu-Pi JENG ,  Mu-Hsi SUNG ,  Kuo-Lun HUANG

    IPC分类号： C01B32/05 ,  C01B32/963 ,  C01B32/97

    摘要： A method of purifying silicon carbide powder includes: providing a container with a surface coated by a nitrogen-removal metal layer, wherein the nitrogen-removal metal layer is tantalum, niobium, tungsten, or a combination thereof; putting a silicon carbide powder into the container to contact the nitrogen-removal metal layer; and heating the silicon carbide powder under an inert gas at a pressure of 400 torr to 760 torr at 1700° C. to 2300° C. for 2 to 10 hours, thereby reducing the nitrogen content of the silicon carbide powder.

    Direct additive synthesis of diamond semiconductor
    10.
    发明授权
    Direct additive synthesis of diamond semiconductor 有权

    公开(公告)号：US11557475B2

    公开(公告)日：2023-01-17

    申请号：US17316824

    申请日：2021-05-11

    申请人： Lockheed Martin Corporation

    发明人： David Glen Findley

    IPC分类号： B33Y30/00 ,  C30B29/04 ,  H01L21/02 ,  B33Y10/00 ,  C30B7/14 ,  H01L23/15 ,  C30B29/36 ,  B28B1/00 ,  B33Y70/00 ,  C01B32/26 ,  C09D11/037 ,  C01B32/963 ,  C09D11/033 ,  C01B32/05

    摘要： In an embodiment, a system includes a three-dimensional (3D) printer, a neutral feedstock, a p-doped feedstock, an n-doped feedstock, and a laser. The 3D printer includes a platen and an enclosure. The platen includes an inert metal. The enclosure includes an inert atmosphere. The neutral feedstock is configured to be deposited onto the platen. The neutral feedstock includes a halogenated solution and a nanoparticle having a negative electron affinity. The p-doped feedstock is configured to be deposited onto the platen. The p-doped feedstock includes a boronated compound introduced to the neutral feedstock. The n-doped feedstock is configured to be deposited onto the platen. The n-doped feedstock includes a phosphorous compound introduced to the neutral feedstock. The laser is configured to induce the nanoparticle to emit solvated electrons into the halogenated solution to form, by reduction, layers of a ceramic comprising a neutral layer, a p-doped layer, and an n-doped layer.