公开(公告)号：US11229893B2

公开(公告)日：2022-01-25

申请号：US16239845

申请日：2019-01-04

申请人： IHI Corporation ,  The University of Tokyo

发明人： Yasuyuki Fukushima ,  Kozue Akazaki ,  Yasutomo Tanaka ,  Kazuma Akikubo ,  Takeshi Nakamura ,  Yukihiro Shimogaki ,  Takeshi Momose ,  Noboru Sato ,  Kohei Shima ,  Yuichi Funato

IPC分类号： B01J12/00 ,  C04B35/565 ,  C01B33/107 ,  C01B32/977 ,  C23C16/42 ,  C01B32/963 ,  C23C16/32

摘要： Provided is a method of producing a silicon compound material, including the steps of: storing a silicon carbide preform in a reaction furnace; supplying a raw material gas containing methyltrichlorosilane to the reaction furnace to infiltrate the preform with silicon carbide; and controlling and reducing a temperature of a gas discharged from the reaction furnace at a predetermined rate to subject the gas to continuous thermal history, to thereby decrease generation of a liquid or solid by-product derived from the gas.

公开(公告)号：US10167549B2

公开(公告)日：2019-01-01

申请号：US15194887

申请日：2016-06-28

申请人： IHI Corporation ,  The University of Tokyo

发明人： Takeshi Nakamura ,  Kozue Hotozuka ,  Yasuyuki Fukushima ,  Yukihiro Shimogaki ,  Takeshi Momose ,  Hidetoshi Sugiura ,  Kohei Shima ,  Yuichi Funato

IPC分类号： C23C16/04 ,  C23C16/32 ,  H01L21/02 ,  C04B35/571 ,  C04B35/622 ,  C04B35/565 ,  C04B35/573 ,  C04B35/80

摘要： In the present embodiment, in the production of a heat-resistant composite material resulting from impregnating a ceramic fiber preform with silicon carbide, a mixed gas containing starting material gas, an additive gas, and a carrier gas is supplied to a substrate having a minute structure such as a preform stored in an electric furnace, silicon carbide is deposited to form a film by means of a chemical vapor deposition method or a chemical vapor infiltration method, and the film formation growth speed and embedding uniformity are controlled by means of the amount of additive gas added to the starting material gas, the starting material gas contains tetramethylsilane, and the additive gas contains a molecule containing chlorine such as methyl chloride or hydrogen chloride. The film formation growth speed and embedding uniformity of the silicon carbide are both achieved.

公开(公告)号：US10221104B2

公开(公告)日：2019-03-05

申请号：US15165676

申请日：2016-05-26

申请人： IHI Corporation ,  The University of Tokyo

发明人： Takeshi Nakamura ,  Masato Ishizaki ,  Kozue Hotozuka ,  Yasuyuki Fukushima ,  Yukihiro Shimogaki ,  Takeshi Momose ,  Hidetoshi Sugiura ,  Kohei Shima ,  Yuichi Funato

IPC分类号： C04B35/565 ,  C04B35/80 ,  C04B41/45 ,  C04B41/50 ,  C04B41/87 ,  C23C16/04 ,  C23C16/32 ,  C23C16/448 ,  C04B41/00

摘要： A mixed gas containing a precursor gas, an additive gas and a carrier gas is supplied to a preform stored in an electric furnace, and silicon carbide is deposited by chemical vapor deposition or chemical vapor phase impregnation to form a film. The preform includes multiple fiber bundles, and the fiber bundles include multiple fibers. This heat-resistant composite material includes a ceramic fiber preform impregnated with silicon carbide, and producing the composite material involves a step in which silicon carbide is deposited between the fibers to integrate the fibers which configure the fiber bundles, and a step in which silicon carbide is deposited between the fiber bundles to integrate the fiber bundles. Hereby, uniformity of embedding and growth rate of the silicon carbide film are both attained.